# US 8,786,941 B2 · Semiconductor optical amplifier

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- Number: US 8,786,941 B2
- Document ID: US8786941B2
- Status: Granted
- Kind: B2
- Application number: 13/166,900
- Filed: 2011-06-23
- Published: 2012-01-05
- Granted: 2014-07-22
- Earliest claimed: 2010-06-30
- Assignees: Sony Corporation; Tohoku University
- Applicants: Masaru Kuramoto; Masao Ikeda; Rintaro Koda; Tomoyuki Oki; Hideki Watanabe; Takao Miyajima; Hiroyuki Yokoyama
- Inventors: Masaru Kuramoto; Masao Ikeda; Rintaro Koda; Tomoyuki Oki; Hideki Watanabe; Takao Miyajima; Hiroyuki Yokoyama
- Web page: https://patentgrep.com/patent/US8786941B2

## CPC

- H01S 5/1064: {varying width along the optical axis}
- H01S 5/1085: {Oblique facets}
- H01S 5/16: Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S5/14 takes precedence)
- H01S 5/32341: {blue laser based on GaN or GaP}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H01S 5/50: Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S 5/04256: {characterised by the configuration}
- H01S 5/0602: {which is an umpumped part of the active layer}
- H01S 5/0657: {Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity}
- H01S 5/22: having a ridge or stripe structure
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

## Claims

### Claim 1

A semiconductor optical amplifier comprising:
a laminated structure including (i) a first compound semiconductor layer that has a first conductivity type and is composed of GaN compound semiconductor, (ii) a second compound semiconductor layer that has a second conductivity type different from the first conductivity type and is composed of GaN compound semiconductor, and (iii) a third compound semiconductor layer that has a light amplification region composed of GaN compound semiconductor, the first compound semiconductor layer, the third compound semiconductor layer, and the second compound semiconductor layer being sequentially layered;
a second electrode on the second compound semiconductor layer; and
a first electrode electrically connected to the first compound semiconductor layer,
wherein,
the laminated structure has a ridge stripe structure,
when a width of the ridge stripe structure in a light output end face is Wout, and a width of the ridge stripe structure in a light incident end face is Win, Wout>Win is satisfied, and
a carrier non-injection region is provided in the laminated structure, the carrier non-injection region extending from the light output end face of the ridge stripe structure and towards the light incident end face of the ridge stripe structure along an axis line of the semiconductor optical amplifier, the first, second, and third compound semiconductor layers being present in the carrier non-injection region, and the second electrode not being present in the carrier non-injection region.

### Claim 2 (depends on 1)

The semiconductor optical amplifier according to claim 1, wherein Wout is greater or equal to 5 μm.

### Claim 3 (depends on 1)

The semiconductor optical amplifier according to claim 1, wherein Win is from 1.4 μm to 2.0 μm, both inclusive.

### Claim 4 (depends on 1)

The semiconductor optical amplifier according to claim 1,
wherein the second electrode is composed of a first section and a second section separated by an isolation trench, and
the second section of the second electrode is provided in the carrier non-injection region.

### Claim 5 (depends on 4)

The semiconductor optical amplifier according to claim 4, wherein a voltage equal to or less than a built-in voltage is applied to the second section of the second electrode.

### Claim 6 (depends on 1)

The semiconductor optical amplifier according to claim 1, wherein the axis line of the semiconductor optical amplifier intersects with an axis line of the ridge stripe structure at a given angle that ranges from 0.1 to 10 degrees.

### Claim 7 (depends on 1)

The semiconductor optical amplifier according to claim 1, wherein a value of (width of the ridge stripe structure in the light output end face)/(width of laser light outputted from the semiconductor optical amplifier) is from 1.1 to 10, both inclusive.