# US 8,786,825 B2 · Apparatus and method of measuring a property of a substrate

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- Number: US 8,786,825 B2
- Document ID: US8786825B2
- Status: Granted
- Kind: B2
- Application number: 12/936,327
- Filed: 2009-04-20
- Published: 2011-05-05
- Granted: 2014-07-22
- Earliest claimed: 2008-04-21
- Assignees: ASML Netherlands B.V.
- Applicants: Marcus Adrianus Van De Kerkhof; Maurits Van Der Schaar; Andreas Fuchs; Martyn John Coogans
- Inventors: Marcus Adrianus Van De Kerkhof; Maurits Van Der Schaar; Andreas Fuchs; Martyn John Coogans
- Web page: https://patentgrep.com/patent/US8786825B2

## CPC

- G03F 7/7065: {Defects, e.g. optical inspection of patterned layer for defects}
- G01N 21/47: Scattering, i.e. diffuse reflection (G01N21/25, G01N21/41 take precedence {G01N21/55 takes precedence})
- G01N 21/4788: {Diffraction (for sizing particles G01N15/0205)}
- G01N 21/9501: {Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)}
- G01N 21/956: Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)}
- G03F 7/70633: {Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching}
- G03F 9/7049: {Technique, e.g. interferometric}
- G03F 9/7088: {Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.

## Claims

### Claim 1

An inspection apparatus configured to determine a property of a substrate, comprising:
a radiation source configured to output a radiation beam toward an overlay target on a surface of the substrate;
a collimator configured to collimate and focus the radiation beam once reflected from the overlay target, and to separate diffraction orders of a diffraction spectrum of the reflected radiation beam;
a detector configured to detect at least a subset of the separated diffraction orders of the reflected radiation beam and to determine first and second properties of respective first and second portions of the subset; and
a processor configured to:
determine the property of the substrate by comparing the first and second properties in a plane positioned in a range from where the radiation beam is converging toward an image plane of the collimator to where the radiation beam is diverging from the image plane;
determine a position of the overlay target with respect to an optical axis of the collimator; and
remove an error of relative positioning from the determination of the property of the substrate based on the determined position of the overlay target.

### Claim 2 (depends on 1)

The inspection apparatus according to claim 1, wherein the plane is positioned between an image plane and a pupil plane of the collimator, where, in use, the reflected radiation beam converges towards the image plane.

### Claim 3 (depends on 1)

The inspection apparatus according to claim 1, wherein the plane is positioned downstream of a plane conjugate to the image plane, where, in use, the reflected radiation beam diverges from the image plane.

### Claim 4 (depends on 1)

The inspection apparatus according to claim 1, wherein the plane is positioned on an image plane of the collimator.

### Claim 5 (depends on 1)

The inspection apparatus according to claim 1, wherein the plane is positioned near an image plane of the collimator.

### Claim 6 (depends on 1)

The inspection apparatus according to claim 1, further comprising a spatial filter between the substrate and the detector that is configured to block a zeroth diffraction order of the diffraction spectrum.

### Claim 7 (depends on 1)

The inspection apparatus according to claim 1, further comprising an optical device configured to spatially diverge positive and negative first diffraction orders of the diffraction spectrum before the spectrum is detected by the detector.

### Claim 8 (depends on 1)

The inspection apparatus according to claim 1, wherein the detector is arranged to detect positive and negative first diffraction orders of the diffraction spectrum substantially simultaneously.

### Claim 9 (depends on 1)

The inspection apparatus according to claim 1, wherein the property of the substrate to be measured is the overlay of a first layer with respect to a second layer on the substrate.

### Claim 10 (depends on 9)

The inspection apparatus according to claim 9, wherein:
the first measured property comprises a positive first diffraction order and the second measured property comprises a negative first diffraction order; and
the overlay is measured by comparing intensities of the positive and negative first diffraction orders.

### Claim 11 (depends on 1)

The inspection apparatus according to claim 1, wherein the property of the substrate comprises a measurement parameter of the overlay target.

### Claim 12 (depends on 1)

The inspection apparatus according to claim 1, wherein the collimator comprises an optical device configured to separate the diffraction spectrum into two or more sub-beams, at least two of the sub-beams comprising non-zero diffraction orders of the reflected beam.

### Claim 13 (depends on 12)

The inspection apparatus according to claim 12, wherein:
the at least two sub-beams comprise a positive and a negative first diffraction order respectively;
the subset of the separated diffraction orders detected by the detector comprises the positive and negative first diffraction orders of the at least two sub-beams; and
the processor is configured to determine, from an intensity of each of the two first diffraction orders detected by the detector, an overlay of a first layer on the substrate with respect to a second layer.

### Claim 14 (depends on 1)

The inspection apparatus according to claim 1, further comprising a spatial filter positioned in an intermediate image plane of the collimator, the spatial filter being configured to prevent stray radiation from reaching the detector, the stray radiation originating from outside of a target on the substrate from which the radiation beam is reflected.

### Claim 15 (depends on 1)

The inspection apparatus according to claim 1, wherein the collimator includes an area between the substrate and a lens that is filled with a fluid configured to create a higher effective numerical aperture of the lens.

### Claim 16 (depends on 1)

The inspection apparatus according to claim 1, wherein the detector is configured to detect the diffracted spectrum for a plurality of wavelengths and a plurality of incident angles of the radiation beam substantially simultaneously.

### Claim 17 (depends on 1)

The inspection apparatus according to claim 1, wherein the detector is configured to measure defocused images of the surface of the substrate and the property to be measured is determined by analyzing the defocused images.

### Claim 18 (depends on 1)

The inspection apparatus according to claim 1, wherein;
the detector is further configured to output the detected at least subset of the separated diffraction orders as a detector signal.

### Claim 19

A scatterometer configured to determine a property of a substrate, comprising:
a radiation source configured to output a radiation beam toward an overlay target on a surface of the substrate;
a collimator configured to collimate and focus the radiation beam once reflected from the overlay target, and to separate diffraction orders of an angle-resolved spectrum of the reflected radiation beam; and
a detector configured to detect the angle-resolved spectrum of the reflected radiation beam and to determine first and second properties of the angle-resolved spectrum, the detector being situated in a plane positioned in a range from where the radiation beam is converging toward an image plane of the collimator to where the radiation beam is diverging from the image plane; and
a processor configured to:
determine the property of the substrate by comparing the first and second properties of the angle-resolved spectrum;
determine a position of the overlay target with respect to an optical axis of the collimator; and
remove an error of relative positioning from the determination of the property of the substrate based on the determined position of the overlay target.

### Claim 20

A method of measuring a property of a substrate, comprising:
irradiating a target on a substrate with a radiation beam, the radiation beam being reflected from the target as a reflected radiation beam;
collimating and focusing the reflected radiation beam using a collimator;
diverging first diffraction orders of the reflected radiation beam;
detecting the intensity of the first diffraction orders in a plane positioned within a range from where the reflected radiation beam is converging toward an image plane of the collimator to where the reflected radiation beam is diverging from the image plane;
comparing the intensity of each of the first diffraction orders against the other;
determining, from the comparing of the intensity of the first diffraction orders, a property of the substrate;
determining a position of the target with respect to an optical axis of the collimator; and
removing an error of relative positioning from the determining of the property of the substrate based on the determining of the position of the target.

### Claim 21 (depends on 20)

The method according to claim 20, further comprising blocking a zeroth diffraction order from the reflected radiation beam.

### Claim 22

A lithographic apparatus comprising:
an illumination system arranged to illuminate a pattern;
a projection system arranged to project an image of the pattern onto a substrate; and
an inspection apparatus configured to determine a property of the substrate, the inspection apparatus comprising:
a radiation source configured to output a radiation beam toward an overlay target on a surface of the substrate;
a collimator configured to collimate and focus the radiation beam once reflected from the overlay target, and to separate diffraction orders of a diffraction spectrum of the reflected radiation beam;
a detector configured to detect at least a subset of the separated diffraction orders of the reflected radiation beam and to determine first and second properties of respective first and second portions of the subset; and
a processor configured to:
determine the property of the substrate by comparing the first and second properties in a plane positioned in a range from where the radiation beam is converging toward an image plane of the collimator to where the radiation beam is diverging from the image plane;
determine a position of the overlay target with respect to an optical axis of the collimator; and
remove an error of relative positioning from the determination of the property based on the determined position of the overlay target.

### Claim 23

A lithographic cell comprising:
a coater arranged to coat a substrate with a radiation sensitive layer;
a lithographic apparatus arranged to expose images onto the radiation sensitive layer of the substrate coated by the coater;
a developer arranged to develop images exposed by the lithographic apparatus; and
an inspection apparatus configured to determine a property of the substrate, the inspection apparatus comprising:
a radiation source configured to output a radiation beam toward an overlay target on a surface of the substrate;
a collimator configured to collimate and focus the radiation beam once reflected from the overlay target, and to separate diffraction orders of a diffraction spectrum of the reflected radiation beam;
a detector configured to detect at least a subset of the separated diffraction orders of the reflected radiation beam in a plane positioned in a range from where the radiation beam is converging toward an image plane of the collimator to where the radiation beam is diverging from the image plane; and
a processor configured to:
determine first and second properties of respective first and second portions of the subset, and the property of the substrate by comparing the first and second properties;
determine a position of the overlay target with respect to an optical axis of the collimator; and
remove an error of relative positioning from the determination of the property of the substrate based on the determined position of the overlay target.

### Claim 24

A device manufacturing method comprising:
forming a pattern on a substrate using a lithographic apparatus; and
determining a value related to a parameter of the pattern formed by:
irradiating a target on the substrate with a radiation beam, the radiation beam being reflected from the target as a reflected radiation beam;
collimating and focusing the reflected radiation beam using a collimator;
diverging first diffraction orders of the reflected radiation beam;
detecting the intensity of the first diffraction orders in a plane positioned within a range from where the reflected radiation beam is converging toward an image plane of the collimator to where the reflected radiation beam is diverging from the image plane;
comparing the intensity of each of the first diffraction orders against the other;
determining, from the comparing of the intensity of the first diffraction orders, the value related to the parameter of the pattern;
determining a position of the target with respect to an optical axis of the collimator; and
removing an error of relative positioning from the determining of the value based on the determining of the position of the target.

### Claim 25 (depends on 24)

The device manufacturing method according to claim 24, further comprising blocking a zeroth diffraction order from the reflected radiation beam.