# US 8,786,369 B2 · High frequency amplifier

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- Number: US 8,786,369 B2
- Document ID: US8786369B2
- Status: Granted
- Kind: B2
- Application number: 13/557,609
- Filed: 2012-07-25
- Published: 2013-05-16
- Granted: 2014-07-22
- Earliest claimed: 2011-11-16
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kazutaka Takagi
- Inventors: Kazutaka Takagi
- Web page: https://patentgrep.com/patent/US8786369B2

## CPC

- H03F 3/195: in integrated circuits
- H03F 3/602: {Combinations of several amplifiers}
- H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
- H03F: AMPLIFIERS

## Abstract

According to one embodiment, a high frequency amplifier having a division circuit, FET cells, a stabilization circuit and a combination circuit is provided. The division circuit divides an input signal to produce a plurality of signals. The FET cells amplify the signals produced by the division circuit. The stabilization circuit provided with RC parallel-connected circuits which are respectively connected in series between the division circuit and gates of the FET cells. Each of the RC parallel-connected circuits has a capacitor and a resistor connected in parallel with each other. The combination circuit combines the signals amplified by the FET cells.

## Claims

### Claim 1

A high frequency amplifier, comprising:
a division circuit which divides an input signal to produce a plurality of signals;
FET cells which amplifies signals produced by the division circuit;
a stabilization circuit provided with RC parallel-connected circuits which are respectively connected in series between the division circuit and gates of the FET cells, each of the RC parallel-connected circuits having a capacitor and a resistor connected in parallel with each other; and
a combination circuit which combines signals amplified by the FET cells, wherein the stabilization circuit is arranged on a substrate other than a semiconductor substrate on which the FET cells are arranged.

### Claim 2 (depends on 1)

A high frequency amplifier according to claim 1, wherein each of the FET cells and each of the RC parallel-connected circuits are connected with each other through a wire, respectively.

### Claim 3 (depends on 1)

A high frequency amplifier according to claim 1, wherein the division circuit, the stabilization circuit and the combination circuit are respectively arranged on substrates other than a semiconductor substrate on which the FET cells are arranged.

### Claim 4 (depends on 3)

A high frequency amplifier according to claim 3, wherein the division circuit and the stabilization circuit are arranged on the same substrate other than a semiconductor substrate on which the FET cells are arranged.

### Claim 5 (depends on 3)

A high frequency amplifier according to claim 3, wherein the stabilization circuit includes:
a circuit substrate of a dielectric material;
a first electrode formed on the circuit substrate;
a dielectric layer formed on the first electrode, the resistor being formed on the dielectric layer;
a second electrode formed on the dielectric layer to compose the capacitor with the first electrode and the dielectric layer; and
a third electrode formed in a through hole which is provided in the dielectric layer and connects the first electrode with the resistor electrically.

### Claim 6 (depends on 4)

A high frequency amplifier according to claim 4, wherein the stabilization circuit includes:
a circuit substrate of a dielectric material;
a resistor formed on the circuit substrate;
a capacitor formed on the circuit substrate, the capacitor having a first electrode, a dielectric layer formed on the first electrode, and a second electrode formed on the dielectric layer;
a first conductive line which connects an end of the resistor and the first electrode electrically; and
a second conductive line which connects the other end of the resistor and the second electrode electrically.

### Claim 7 (depends on 1)

A high frequency amplifier according to claim 1, wherein the substrate other than the semiconductor substrate is a dielectric substrate.