# US 8,786,278 B2 · Three-dimensional magnetic field sensor and method of producing same

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- Number: US 8,786,278 B2
- Document ID: US8786278B2
- Status: Granted
- Kind: B2
- Application number: 13/493,495
- Filed: 2012-06-11
- Published: 2013-05-30
- Granted: 2014-07-22
- Earliest claimed: 2011-11-24
- Assignees: TDK Corporation
- Applicants: Naoki Ohta; Hiroshi Yamazaki
- Inventors: Naoki Ohta; Hiroshi Yamazaki
- Web page: https://patentgrep.com/patent/US8786278B2

## CPC

- G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)}
- G01R 33/098: {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors}
- Y10T 29/49982: Coating
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A three-dimensional magnetic field sensor includes a substrate having an element placement surface that is planar, and first, second and third MR elements disposed on a side of the element placement surface of the substrate and integrated with the substrate. Each of the first, second and third MR elements includes a magnetization pinned layer, a nonmagnetic layer, and a free layer. The magnetization pinned layer of the first MR element has a magnetization direction that is pinned in an X direction parallel to the element placement surface. The magnetization pinned layer of the second MR element has a magnetization direction that is pinned in a Y direction parallel to the element placement surface and different from the X direction. The magnetization pinned layer of the third MR element has a magnetization direction that is pinned in a Z direction perpendicular to the element placement surface.

## Claims

### Claim 1

A three-dimensional magnetic field sensor for detecting a three-dimensional direction of an external magnetic field, comprising:
a substrate having an element placement surface that is planar; and
first, second and third magnetoresistive elements disposed on a side of the element placement surface of the substrate and integrated with the substrate, wherein:
each of the first, second and third magnetoresistive elements includes a magnetization pinned layer, a nonmagnetic layer, and a free layer that are stacked in a direction perpendicular to the element placement surface;
in each of the first, second and third magnetoresistive elements, the nonmagnetic layer is disposed between the magnetization pinned layer and the free layer, and the free layer has a magnetization direction that varies according to the direction of the external magnetic field;
the magnetization pinned layer of the first magnetoresistive element has a magnetization direction that is pinned in a first direction parallel to the element placement surface;
the magnetization pinned layer of the second magnetoresistive element has a magnetization direction that is pinned in a second direction parallel to the element placement surface and different from the first direction;
the magnetization pinned layer of the third magnetoresistive element has a magnetization direction that is pinned in a third direction perpendicular to the element placement surface;
the first magnetoresistive element detects a strength of a component of the external magnetic field in the first direction;
the second magnetoresistive element detects a strength of a component of the external magnetic field in the second direction; and
the third magnetoresistive element detects a strength of a component of the external magnetic field in the third direction.

### Claim 2 (depends on 1)

The three-dimensional magnetic field sensor according to claim 1, wherein the second direction is orthogonal to the first direction.

### Claim 3 (depends on 1)

The three-dimensional magnetic field sensor according to claim 1, further comprising an arithmetic circuit that generates, based on outputs from the first, second and third magnetoresistive elements, data indicative of the three-dimensional direction of the external magnetic field.

### Claim 4 (depends on 1)

The three-dimensional magnetic field sensor according to claim 1, wherein materials of the magnetization pinned layer, the nonmagnetic layer and the free layer of the second magnetoresistive element are the same as those of the magnetization pinned layer, the nonmagnetic layer and the free layer of the first magnetoresistive element, respectively.

### Claim 5 (depends on 1)

The three-dimensional magnetic field sensor according to claim 1, wherein the magnetization pinned layer of the third magnetoresistive element contains at least one of an ordered alloy, an artificial lattice composed of a multilayer film, and an amorphous alloy.

### Claim 6 (depends on 1)

The three-dimensional magnetic field sensor according to claim 1, wherein the free layer of the third magnetoresistive element has a coercivity in the third direction lower than that of the magnetization pinned layer of the third magnetoresistive element.

### Claim 7 (depends on 1)

A method of producing the three-dimensional magnetic field sensor of claim 1, comprising the steps of forming the first magnetoresistive element; forming the second magnetoresistive element; and forming the third magnetoresistive element, wherein: the step of forming the first magnetoresistive element includes the steps of: forming a first stack, the first stack including a first film, the nonmagnetic layer of the first magnetoresistive element and the free layer of the first magnetoresistive element; and pinning the magnetization direction of the first film so that the first film becomes the magnetization pinned layer of the first magnetoresistive element; the step of forming the second magnetoresistive element includes the steps of forming a second stack, the second stack including a second film, the nonmagnetic layer of the second magnetoresistive element and the free layer of the second magnetoresistive element; and pinning the magnetization direction of the second film so that the second film becomes the magnetization pinned layer of the second magnetoresistive element; the step of forming the first stack and the step of forming the second stack are performed simultaneously; and the step of pinning the magnetization direction of the first film and the step of pinning the magnetization direction of the second film are performed separately.