# US 8,786,276 B2 · Construction element made of a ferromagnetic shape memory material and use thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,786,276 B2 - Document ID: US8786276B2 - Status: Granted - Kind: B2 - Application number: 12/995,618 - Filed: 2009-06-02 - Published: 2011-07-07 - Granted: 2014-07-22 - Earliest claimed: 2008-06-02 - Assignees: Leibniz-Institut Fuer Festkoerper-Und Werkstoffforschung Dresden E.V. - Applicants: Sebastian Faehler; Michael Thomas; Oleg Heczko; Joerg Buschbeck; Jeffrey McCord - Inventors: Sebastian Faehler; Michael Thomas; Oleg Heczko; Joerg Buschbeck; Jeffrey McCord - Web page: https://patentgrep.com/patent/US8786276B2 ## CPC - F03G 7/0614: {using shape memory elements} - F03G 7/06147: {Magnetic shape memory alloys, e.g. ferro-magnetic alloys} - F03G 7/0616: {characterised by the material or the manufacturing process, e.g. the assembly (magnetic shape memory alloys F03G7/06147)} - H10N 35/00: Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N39/00) - H10N 35/01: Manufacture or treatment - H10N 35/101: {with mechanical input and electrical output, e.g. generators, sensors} - H10N 35/85: Magnetostrictive active materials - F03G: SPRING, WEIGHT, INERTIA OR LIKE MOTORS; MECHANICAL-POWER PRODUCING DEVICES OR MECHANISMS, NOT OTHERWISE PROVIDED FOR OR USING ENERGY SOURCES NOT OTHERWISE PROVIDED FOR (arrangements in connection with power supply in vehicles from force of nature B60K16/00; electric propulsion with power supply in vehicles from force of nature B60L8/00) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract The invention relates to the field of materials science and relates to a component, which can be used, for example, for microcomponents, microsensors and microactuators. The object of the present invention is to disclose a component in which a clearly greater relative length change occurs. The object is attained through a component of a ferromagnetic shape memory material, produced by a method in which at least one sacrificial layer is applied onto a single-crystalline or biaxially textured substrate, onto which sacrificial layer an epitaxial or textured layer of a ferromagnetic shape memory material with a layer thickness of ≦50 μm is applied, subsequently the sacrificial layer is removed at least partially, and during or after the layer application a structuring at least of the ferromagnetic shape memory material is realized such that an aspect ratio is achieved in which at least one length is greater by at least a factor of 3 than the thickness of the layer or the shortest dimension of the component. ## Claims ### Claim 1 A component comprising at least one ferromagnetic shape memory material, which has during a temperature cycle a martensitic phase transition and in a martensitic state a magnetic stray field energy reduced by variant selection, and which can be used without an additional external magnetic field and with which the variant selection is realized without a thermo-mechanical training of a shape memory effect, said component produced by a method comprising: applying at least one sacrificial layer onto a substrate; depositing a ferromagnetic shape memory material layer with a layer thickness of ≦50 μm; and after the depositing, at least partially removing the sacrificial layer. ### Claim 2 (depends on 1) The component of claim 1, wherein, during or after the depositing, a structure results having at least one length that is greater by at least a factor of 3 than a dimension of the component. ### Claim 3 (depends on 2) The component of claim 2, wherein the structure has an aspect ratio; and the at least one length of the component is 3 times greater than a thickness of the epitaxial or textured layer and the shortest dimension of the component. ### Claim 4 (depends on 2) The component of claim 2, wherein the structure is made from an epitaxial or textured ferromagnetic shape memory material layer. ### Claim 5 (depends on 1) The component of claim 1, wherein said substrate comprises one of a single-crystalline substrate or a biaxially textured substrate. ### Claim 6 (depends on 1) The component of claim 1, wherein the ferromagnetic shape memory material is an alloy of at least one of: Ni—Mn—Ga, Fe—Pd, Co—Ni—Ga, Ni—Fe—Ga, and Co—Fe—Ga. ### Claim 7 (depends on 6) The component of claim 6, further comprising up to 10 atomic % of other alloying elements. ### Claim 8 (depends on 7) The component of claim 7, wherein the alloying elements comprise at least one of; W, Co, Mn, and Ir. ### Claim 9 (depends on 1) The component of claim 1, wherein, after the at least partially removing, a structured epitaxial ferromagnetic shape memory material layer results in which over at least 50% of its area it has no connection to one of the substrate and an other material. ### Claim 10 (depends on 1) The component of claim 1, wherein a structured epitaxial ferromagnetic shape memory material layer results in which over at least 50% of its area it has no connection to one of the substrate and an other material. ### Claim 11 (depends on 10) The component of claim 10, wherein the other material is one of a sacrificial layer and electrodes. ### Claim 12 (depends on 10) The component of claim 10, wherein the other material has a lower elongation than the ferromagnetic shape memory material. ### Claim 13 (depends on 1) The component of claim 1, wherein the ferromagnetic shape memory material layer comprises a structured layer of the ferromagnetic shape memory material. ### Claim 14 (depends on 13) The component of claim 13, wherein at least one of a length and a width of the structured layer of the ferromagnetic shape memory material is greater by at least a factor of 3 to 100 than a thickness of said structured layer. ### Claim 15 (depends on 13) The component of claim 13, wherein at least one a length and a width of the structured layer has an extension of a maximum of 1 mm. ### Claim 16 (depends on 1) The component of claim 1, wherein the ferromagnetic shape memory material has a Curie temperature above a martensitic phase transition temperature. ### Claim 17 (depends on 1) The component of claim 1, wherein the sacrificial layer is composed of one of; Cr, NaCl, Rh, Cu, Au, Pt, Pd, Ta, W and Ag. ### Claim 18 (depends on 1) The component of claim 1, further comprising one of buffer layers and additional layers arranged between at least one of: the substrate and said sacrificial layer; and said sacrificial layer and a layer of the ferromagnetic shape memory material. ### Claim 19 (depends on 1) The component of claim 1, wherein the layer thickness is ≦20 μm. ### Claim 20 (depends on 19) The component of claim 19, wherein the layer thickness is ≦1 μm. ### Claim 21 (depends on 1) The component of claim 1, wherein, on average, there are no large-angle grain boundaries in the ferromagnetic shape memory material layer in a volume that is determined by a cross section multiplied by a minimum value of a thickness or a width of said ferromagnetic shape memory material layer. ### Claim 22 (depends on 1) The component of claim 1, wherein, on average, there is less than one non-point-like defect at least in the ferromagnetic shape memory material layer in a volume that is determined by a cross section multiplied by a minimum value of a thickness or a width of said ferromagnetic shape memory material layer. ### Claim 23 (depends on 1) The component of claim 1, wherein the ferromagnetic shape memory material layer is made of source materials or coating media having impurities of <1% by volume. ### Claim 24 (depends on 1) The component of claim 1, wherein the ferromagnetic shape memory material layer is made of source materials or coating media having impurities of <0.1% by volume. ### Claim 25 (depends on 1) The component of claim 1, wherein the method utilizes lithographic methods comprising light, electrons or x-rays. ### Claim 26 (depends on 1) The component of claim 1, wherein the depositing is carried out at temperatures in the range of 0-800° C. ### Claim 27 (depends on 1) The component of claim 1, further comprising applying a layer of a Ni—Mn—Ga base alloy at temperatures of between 250 to 500° C. ### Claim 28 (depends on 1) The component of claim 1, further comprising applying a Fe—Pd base alloy at a temperature of less than 300°. ### Claim 29 (depends on 1) The component of claim 1, wherein the component is composed of two bars or wires arranged perpendicular to one another and comprising a ferromagnetic shape memory material, and which can moves in two independent directions. ### Claim 30 (depends on 1) The component of claim 1, wherein the component is one of: a microactuator; and a micro sensor. ### Claim 31 (depends on 1) The component of claim 1, wherein the component is one of: a linear actuator; a positioning system component; an optical component; an y-x scanner component; and a stent. ### Claim 32 (depends on 1) The component of claim 1, wherein the component is one of: a position sensor; a length sensor; and a pressure sensor.