# US 8,786,178 B2 · Display device, electronic apparatus, and method of fabricating the display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,786,178 B2 - Document ID: US8786178B2 - Status: Granted - Kind: B2 - Application number: 13/559,634 - Filed: 2012-07-27 - Published: 2012-12-06 - Granted: 2014-07-22 - Earliest claimed: 2004-09-29 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Shunpei Yamazaki - Inventors: Shunpei Yamazaki - Web page: https://patentgrep.com/patent/US8786178B2 ## CPC - H10K 59/122: Pixel-defining structures or layers, e.g. banks - H10H 29/14: comprising multiple light-emitting semiconductor components - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT] - H10K 59/124: Insulating layers formed between TFT elements and OLED elements - H10K 59/38: comprising colour filters or colour changing media [CCM] - H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass - H10K 71/164: {using vacuum deposition} - H10K 71/166: {using selective deposition, e.g. using a mask} - H10K 77/111: {Flexible substrates} - H10D 30/6731: {Top-gate only TFTs} - H10D 30/6745: {Polycrystalline or microcrystalline silicon} - H10D 86/0225: {using crystallisation-promoting species, e.g. using a Ni catalyst} - H10D 86/0231: {using masks, e.g. half-tone masks} - H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/1201: {Manufacture or treatment} - H10K 59/8723: {Vertical spacers, e.g. arranged between the sealing arrangement and the OLED} - H10K 59/874: {including getter material or desiccant} - H10K 2102/311: {Flexible OLED} - Y02E 10/549: Organic PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured. ## Claims ### Claim 1 An active matrix display device comprising: a thin film transistor over a first substrate; a first insulating layer over the thin film transistor; a pixel electrode over the first insulating layer, the pixel electrode being electrically connected to the thin film transistor; a second insulating layer to cover an end portion of the pixel electrode; a third insulating layer over and in direct contact with the second insulating layer; a light emitting layer comprising an organic material over the pixel electrode; a second electrode over the light emitting layer; a layer comprising silicon nitride over and in direct contact with the second electrode; and a second substrate over the layer, the second substrate being fixed to the first substrate, wherein the second electrode covers the third insulating layer. ### Claim 2 (depends on 1) The active matrix display device according to claim 1, wherein the thin film transistor is a switching element. ### Claim 3 (depends on 1) The active matrix display device according to claim 1, wherein the third insulating layer comprises an organic resin. ### Claim 4 (depends on 1) The active matrix display device according to claim 1, wherein the second substrate is provided with a color filter. ### Claim 5 (depends on 1) The active matrix display device according to claim 1, wherein the light emitting layer is capable of emitting white light. ### Claim 6 (depends on 1) The active matrix display device according to claim 1, wherein the second insulating layer and the third insulating layer are made of the same organic resin material. ### Claim 7 (depends on 1) The active matrix display device according to claim 1, wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic. ### Claim 8 (depends on 1) The active matrix display device according to claim 1, wherein the second insulating layer comprises polyimide. ### Claim 9 (depends on 1) The active matrix display device according to claim 1, wherein the layer is in direct contact with the second substrate. ### Claim 10 (depends on 1) The active matrix display device according to claim 1, wherein the second substrate is positioned over the third insulating layer with a space interposed therebetween. ### Claim 11 (depends on 1) A display module comprising the active matrix display device according to claim 1, comprising an FPC. ### Claim 12 (depends on 1) An electronic apparatus comprising the active matrix display device according to claim 1, comprising at least one of an antenna, a battery, and an operation key. ### Claim 13 An active matrix display device comprising: a thin film transistor over a first substrate; a first insulating layer over the thin film transistor; a pixel electrode over the first insulating layer, the pixel electrode being electrically connected to the thin film transistor; a second insulating layer to cover an end portion of the pixel electrode; a third insulating layer over and in direct contact with the second insulating layer; a light emitting layer comprising an organic material over the pixel electrode; a second electrode over the light emitting layer wherein the second electrode is capable of transmitting light emitted from the light emitting layer; a layer comprising silicon nitride over and in direct contact with the second electrode; and a second substrate over the layer, the second substrate being fixed to the first substrate, wherein the active matrix display device is configured to emit light through the second substrate, and wherein the second electrode covers the third insulating layer. ### Claim 14 (depends on 13) The active matrix display device according to claim 13, wherein the thin film transistor is a switching element. ### Claim 15 (depends on 13) The active matrix display device according to claim 13, wherein the third insulating layer comprises an organic resin. ### Claim 16 (depends on 13) The active matrix display device according to claim 13, wherein the second substrate is provided with a color filter. ### Claim 17 (depends on 13) The active matrix display device according to claim 13, wherein the light emitting layer is capable of emitting white light. ### Claim 18 (depends on 13) The active matrix display device according to claim 13, wherein the second insulating layer and the third insulating layer are made of the same organic resin material. ### Claim 19 (depends on 13) The active matrix display device according to claim 13, wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic. ### Claim 20 (depends on 13) The active matrix display device according to claim 13, wherein the second insulating layer comprises polyimide. ### Claim 21 (depends on 13) The active matrix display device according to claim 13, wherein the layer is in direct contact with the second substrate. ### Claim 22 (depends on 13) The active matrix display device according to claim 13, wherein the second substrate is positioned over the third insulating layer with a space interposed therebetween. ### Claim 23 (depends on 13) A display module comprising the active matrix display device according to claim 13, comprising an FPC. ### Claim 24 (depends on 13) An electronic apparatus comprising the active matrix display device according to claim 13, comprising at least one of an antenna, a battery, and an operation key. ### Claim 25 An active matrix display device comprising: a thin film transistor over a first substrate; a first insulating layer over the thin film transistor; a pixel electrode over the first insulating layer, the pixel electrode being electrically connected to the thin film transistor; a second insulating layer to cover an end portion of the pixel electrode; a third insulating layer over and in direct contact with the second insulating layer; a light emitting layer comprising an organic material over the pixel electrode; a second electrode over the light emitting layer; a layer comprising silicon nitride over and in direct contact with the second electrode; and a second substrate over the layer, the second substrate being fixed to the first substrate, wherein the active matrix display device is configured to emit light through the first substrate. ### Claim 26 (depends on 25) The active matrix display device according to claim 25, wherein the second electrode covers the third insulating layer. ### Claim 27 (depends on 25) The active matrix display device according to claim 25, wherein the thin film transistor is a switching element. ### Claim 28 (depends on 25) The active matrix display device according to claim 25, wherein the third insulating layer comprises an organic resin. ### Claim 29 (depends on 25) The active matrix display device according to claim 25, wherein the light emitting layer is capable of emitting white light. ### Claim 30 (depends on 25) The active matrix display device according to claim 25, wherein the second insulating layer and the third insulating layer are made of the same organic resin material. ### Claim 31 (depends on 25) The active matrix display device according to claim 25, wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic. ### Claim 32 (depends on 25) The active matrix display device according to claim 25, wherein the second insulating layer comprises polyimide. ### Claim 33 (depends on 25) The active matrix display device according to claim 25, wherein the layer is in direct contact with the second substrate. ### Claim 34 (depends on 25) The active matrix display device according to claim 25, wherein the second substrate is positioned over the third insulating layer with a space interposed therebetween. ### Claim 35 (depends on 25) A display module comprising the active matrix display device according to claim 25, comprising an FPC. ### Claim 36 (depends on 25) An electronic apparatus comprising the active matrix display device according to claim 25, comprising at least one of an antenna, a battery, and an operation key.