# US 8,786,176 B2 · Substrate for organic light-emitting device, and also organic light-emitting device incorporating it

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- Number: US 8,786,176 B2
- Document ID: US8786176B2
- Status: Granted
- Kind: B2
- Application number: 12/810,490
- Filed: 2008-12-23
- Published: 2011-02-17
- Granted: 2014-07-22
- Earliest claimed: 2007-12-27
- Assignees: Saint-Gobain Glass France
- Applicants: Guillaume Lecamp; François-Julien Vermersch; Svetoslav Tchakarov; Hadia Gerardin; Alessandro Giassi
- Inventors: Guillaume Lecamp; François-Julien Vermersch; Svetoslav Tchakarov; Hadia Gerardin; Alessandro Giassi
- Web page: https://patentgrep.com/patent/US8786176B2

## CPC

- H10K 59/876: {comprising a resonant cavity structure, e.g. Bragg reflector pair}
- H10K 59/80517: {Multilayers, e.g. transparent multilayers}
- H10K 50/125: specially adapted for multicolour light emission, e.g. for emitting white light
- H10K 59/8791: {Arrangements for improving contrast, e.g. preventing reflection of ambient light}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A substrate for an organic light-emitting device, includes a transparent substrate having an optical index n0, bearing, on a first main face, a first transparent or semi-transparent coating of an electrode, referred to as the lower electrode, with a sheet resistance less than or equal to 6Ω/□ and which includes the following stack of layers: an anti-reflection sublayer having a given optical thickness L1 and having an optical index n1 such that the ratio of n1 to n0 is greater than or equal to 6/5; a first metallic layer having a given thickness e1; a first separating layer, having a given optical thickness L2; a second metallic layer, having an intrinsic electrical conductivity property, and having a given thickness e2; and an overlayer for adapting the work function, L1 being between 20 nm and 120 nm, L2 between 75 nm and 200 nm, and the sum of the thicknesses e1+e2 of the first and second metallic layers being less than or equal to 40 nm.

## Claims

### Claim 1

A substrate for an organic light-emitting device, comprising a transparent substrate having an optical index n0, bearing, on a first main face, a first transparent or semi-transparent coating of an electrode and which comprises:
an anti-reflection sublayer having a first optical thickness and having an optical index n1 such that the ratio of n1 to n0 is greater than or equal to 6/5;
a first metallic layer having a second thickness, positioned on the anti-reflection sublayer;
an overlayer for adapting a work function of the first transparent or semi-transparent coating of the electrode and comprising a metal oxide selected from the group consisting of a mixed indium tin oxide, a mixed indium zinc oxide, a mixed oxide of zinc and tin, and a mixture thereof, having a third thickness, positioned on the first metallic layer, wherein the overlayer is the last layer of the electrode so as to be provided between an OLED system of the organic light-emitting device and the substrate;
a first separating layer, having a fourth optical thickness, positioned on the first metallic layer and beneath the overlayer;
a second metallic layer, having an intrinsic electrical conductivity property, and having a fifth thickness, said second layer being positioned between the first separating layer and the overlayer;
wherein the first optical thickness is between 20 nm and 120 nm, the fourth optical thickness is between 75 nm and 200 nm, and the sum of the second and fifth thicknesses of the first and second metallic layers is less than or equal to 40 nm;
and wherein the electrode has a sheet resistance less than or equal to 6Ω/□.

### Claim 2 (depends on 1)

The substrate according to claim 1, wherein the first optical thickness is less than or equal to 100 nm and/or the fourth optical thickness is less than or equal to 160 nm.

### Claim 3 (depends on 1)

The substrate according to claim 1, wherein the first optical thickness is less than the fourth optical thickness.

### Claim 4 (depends on 1)

The substrate according to claim 1, wherein the first and second metallic layers are based on silver, wherein the second thickness of the first metallic layer is less than or equal to 15 nm and/or the fifth thickness of the second metallic layer is less than or equal to 15 nm, and the second thickness is greater than the fifth thickness.

### Claim 5 (depends on 1)

The substrate according to claim 1, wherein the electrode has a sheet resistance less than or equal to 3Ω/□.

### Claim 6 (depends on 1)

The substrate according to claim 1, wherein the anti-reflection sublayer comprises a base layer having a thickness greater than or equal to 3 nm that forms a barrier to alkali metals and/or an etch-stop layer, the base layer substantially covering said main face of the substrate and being made of an optionally doped material based on silicon nitride, silicon oxycarbide, silicon oxynitride or silicon oxycarbonitride.

### Claim 7 (depends on 1)

The substrate according to claim 1, wherein the anti-reflection sublayer comprises a first contact layer based on a metal oxide and/or metal nitride, subjacent to the first metallic layer and/or the first separating layer comprises a second contact layer based on a metal oxide and/or metal nitride, subjacent to the second metallic layer.

### Claim 8 (depends on 7)

The substrate according to claim 7, wherein the first and/or the second contact layer is based on at least one of the following metal oxides, optionally doped: chromium oxide, indium oxide, zinc oxide optionally sub-stoichiometric, aluminium oxide, titanium oxide, molybdenum oxide, zirconium oxide, antimony oxide, tin oxide, tantalum oxide or silicon oxide and wherein the first and/or the second contact layer has a thickness greater than or equal to 3 nm.

### Claim 9 (depends on 7)

The substrate according to claim 7, wherein the first and/or the second contact layer is based on doped or undoped zinc oxide.

### Claim 10 (depends on 7)

The substrate according to claim 7, wherein the anti-reflection sublayer comprises a first non-crystalline smoothing layer made of a single or mixed oxide, said smoothing layer being positioned immediately beneath said first contact layer, and being made of a material other than that of the first contact layer, and directly onto the substrate.

### Claim 11 (depends on 10)

The substrate according to claim 10, wherein the first separating layer comprises a second non-crystalline smoothing layer made of a single or mixed oxide, said second smoothing layer being positioned immediately beneath said second contact layer and being made of a material other than that of the second contact layer.

### Claim 12 (depends on 11)

The substrate according to claim 11, wherein the first and/or the second smoothing layer is a layer based on a single or mixed oxide, based on one or more of the following metals: Sn, Si, Ti, Zr, Hf, Zn, Ga, In.

### Claim 13 (depends on 11)

The substrate according to claim 11, wherein at least 60% of the geometric thickness of the sublayer is made up of the first smoothing layer and/or at least 60% of the geometric thickness of the first separating layer is made up of the second smoothing layer.

### Claim 14 (depends on 11)

The substrate according to claim 11, wherein the first smoothing layer is a layer based on an oxide that is non-stoichiometric in oxygen and is based on zinc and tin SnxZnyOz and optionally doped and the first contact layer is a layer based on a doped or undoped oxide that is non-stoichiometric in oxygen and is based on zinc ZnO, and/or the second smoothing layer is a layer based on an oxide that is non-stoichiometric in oxygen and is based on zinc and tin SnxZnyOz and optionally doped, and the second contact layer is a layer based on a doped or undoped oxide that is non-stoichiometric in oxygen and is based on zinc ZnO.

### Claim 15 (depends on 11)

The substrate according to claim 11, wherein the first separating layer comprises, beneath the second contact layer and beneath the second smoothing layer, an additional layer of metal oxide and/or an additional layer based on silicon nitride.

### Claim 16 (depends on 1)

The substrate according to claim 1, wherein the first separating layer is composed of one or more layers having an electrical resistivity less than 107 ohm·cm and/or the anti-reflection sublayer is composed of one or more layers having an electrical resistivity less than 107 ohm·cm.

### Claim 17 (depends on 1)

The substrate according to claim 1, and wherein the overlayer has a thickness less than or equal to 40 nm.

### Claim 18 (depends on 1)

The substrate according to claim 1, wherein the first metallic layer is positioned directly on at least one first subjacent underblocking coating or is directly beneath at least one first superjacent overblocking coating, or the second metallic layer is positioned directly on at least one second subjacent underblocking coating or is directly beneath at least one second superjacent overblocking coating, and wherein at least one first or second overblocking or underblocking coating comprises a metallic, metal nitride and/or oxide layer, based on at least one of the following metals: Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo, Ta, W, or based on an alloy of at least one of said materials.

### Claim 19 (depends on 1)

The substrate according to claim 1, comprising the OLED system, having a thickness between 90 and 350 nm and located on top of the electrode that has an electrode surface area with a size greater than or equal to 1×1 cm2.

### Claim 20 (depends on 19)

The substrate according to claim 19, comprising an upper electrode on top of said OLED system.

### Claim 21 (depends on 1)

A method comprising providing a substrate according to claim 1, for forming an OLED device that forms an illumination or backlighting panel.

### Claim 22

An organic light-emitting device comprising:
a substrate having an index n0 and bearing a first electrode that comprises:
an anti-reflection sublayer having a first optical thickness and having an optical index n1 such that the ratio of n1 to n0 is greater than or equal to 6/5;
a first metallic layer having a second thickness, positioned on the anti-reflection sublayer;
a first separating layer, having a fourth optical thickness, positioned on the first metallic layer and beneath an overlayer, the overlayer for adapting a work function of the electrode and comprising a metal oxide or a metal, having a third thickness, positioned on the first metallic layer, wherein the overlayer is the last layer of the electrode;
a second metallic layer, having an intrinsic electrical conductivity property, and having a fifth thickness, said second layer being positioned between the first separating layer and the overlayer;
the sum of the second and fifth thicknesses of the first and second metallic layers being less than or equal to 40 nm;
an OLED system positioned over the first electrode and that is configured to emit a polychromatic radiation defined at 0° by coordinates (x1, y1) in a CIE XYZ 1931 chromaticity diagram, and
a second electrode, wherein the OLED system is between the first and second electrodes,
wherein the first and fourth optical thicknesses are adjusted so that a first microcavity is formed between the first metallic layer and the second electrode and a second microcavity is formed between the second metallic layer and the second electrode, which first and second microcavities resonate at two different wavelengths in the visible region that are spaced apart by at least about 100 nm to broaden the resonance peaks and form a broadband spectrum in the visible region.

### Claim 23 (depends on 1)

An organic light-emitting device incorporating a substrate according to claim 1 and the OLED system positioned over the electrode and that is configured to emit a polychromatic radiation defined at 0° by coordinates (x1, y1) in a CIE XYZ 1931 chromaticity diagram.

### Claim 24 (depends on 22)

The organic light-emitting device according to claim 22, wherein said device is configured to emit as the output a spectrum defined at 0° by its colorimetric coordinates (x2, y2) in the CIE XYZ 1931 chromaticity diagram, such that √{square root over (((x1−x2)2+(y1−y2)2))}{square root over (((x1−x2)2+(y1−y2)2))} is less than 0.1.

### Claim 25 (depends on 22)

The organic light-emitting device according to claim 22, wherein said device is configured to emit as the output a spectrum defined at 0° by its colorimetric coordinates (x2, y2) in the CIE XYZ 1931 chromaticity diagram and wherein the path length, in the CIE XYZ 1931 chromaticity diagram, between the spectrum emitted at 0° and the spectrum emitted at 60°, is less than or equal to 0.1.

### Claim 26 (depends on 22)

The organic light-emitting device according to claim 22, wherein the path length, in the CIE XYZ 1931 chromaticity diagram, between the spectrum emitted at 0° and the spectrum emitted at 60°, is less than or equal to 0.05.

### Claim 27 (depends on 22)

The organic light-emitting device according to claim 22, wherein said device forms one or more transparent and/or reflective luminous surfaces or an indicating display panel, the system producing uniform light or differentiated luminous zones that are differentiated by guided light extraction in the glass substrate.

### Claim 28 (depends on 22)

The organic light-emitting device according to claim 22, wherein the organic light-emitting device is configured to be used:
as exterior luminous glazing, an internal luminous partition or a luminous glazed door or part thereof;
as a luminous roof, a luminous side window or part thereof, an internal luminous partition of a terrestrial, water-borne or airborne vehicle;
as a bus shelter panel, a wall of a display counter or a shop window, a greenhouse wall, or an illuminating tile;
as a shelf or cabinet element, a façade of a cabinet, an illuminating tile, a ceiling, an illuminating refrigerator shelf, or an aquarium wall;
as a display screen, optionally a double screen, or as a television or computer screen, or
a touch screen; or,
as an illuminating mirror for a lighting a bathroom wall or a kitchen work top, or for a ceiling.

### Claim 29 (depends on 2)

The substrate according to claim 2, wherein the first optical thickness is less than the fourth optical thickness.

### Claim 30 (depends on 10)

The substrate according to claim 10, wherein the first and/or the second contact layer is based on doped or undoped zinc oxide.

### Claim 31 (depends on 11)

The substrate according to claim 11, wherein the first and/or the second contact layer is based on doped or undoped zinc oxide.

### Claim 32 (depends on 23)

The organic light-emitting device according to claim 23, wherein said device is configured to emit as the output a spectrum defined at 0° by its colorimetric coordinates (x2, y2) in the CIE XYZ 1931 chromaticity diagram, such that √{square root over (((x1−x2)2+(y1−y2)2))}{square root over (((x1−x2)2+(y1−y2)2))} is less than 0.1.

### Claim 33 (depends on 23)

The organic light-emitting device according to claim 23, wherein said device is configured to emit as the output a spectrum defined at 0° by its colorimetric coordinates (x2, y2) in the CIE XYZ 1931 chromaticity diagram and wherein the path length, in the CIE XYZ 1931 chromaticity diagram, between the spectrum emitted at 0° and the spectrum emitted at 60°, is less than or equal to 0.1.

### Claim 34 (depends on 23)

The organic light-emitting device according to claim 23, wherein the path length, in the CIE XYZ 1931 chromaticity diagram, between the spectrum emitted at 0° and the spectrum emitted at 60°, is less than or equal to 0.05.

### Claim 35 (depends on 22)

The organic light-emitting device according to claim 22, wherein the metal oxide is optionally doped and comprises chromium oxide, indium oxide, zinc oxide optionally sub-stoichiometric, aluminium oxide, titanium oxide, molybdenum oxide, zirconium oxide, antimony oxide, tin oxide, tantalum oxide or silicon oxide.

### Claim 36 (depends on 1)

An organic light-emitting device incorporating a substrate according to claim 1 and the OLED system, wherein the overlayer is in contact with the OLED system.

### Claim 37 (depends on 22)

The organic light-emitting device according to claim 22, wherein the overlayer is in contact with the OLED system.