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US 8,786,101 B2Granted
Contact structure in a memory device
AssigneeRound Rock Research, LLC
InventorSteven T. Harshfield
Life of this patent
Estimating the term…
Abstract
Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.
Claims8
A semiconductor device comprising:
- a first conductive layer;
- a first insulative layer disposed on the first conductive layer, wherein the first insulative layer comprises a contact opening formed through its entire thickness thereby terminating on the first conductive layer thereby providing a portion of the first conductive layer with no first insulative material thereover;
- a second conductive layer disposed on the first insulative layer, the portion of the first conductive layer where the opening terminates and over which there is no first insulative layer, and in the contact opening the second conductive material comprising at least one of titanium nitride, titanium, aluminum, tungsten, tungsten silicide, and copper;
- a second insulative layer disposed on the second conductive layer and in the contact opening, wherein portions of the second conductive layer are not covered by the second insulative layer;
- and
- a conductive material disposed on the second insulative layer and in the contact opening, wherein the conductive material is in direct contact with the portions of the second conductive layer.
3 more elements
A semiconductor device comprising:
- a first conductive layer disposed on a substrate;
- a first insulative layer disposed on the first conductive layer, wherein the first insulative layer has a contact opening formed through its entire thickness thereby exposing at least a portion of the first conductive layer;
- a second conductive layer disposed on the first insulative layer on the exposed portion of the first conductive layer, and in the contact opening;
- and
- a second insulative layer disposed on the second conductive layer and in the contact opening, wherein at least portions of the second conductive layer are not covered by the second insulative layer.
2 more elements
Dependencies are inferred from the claim text.