# US 8,786,091 B2 · Semiconductor apparatus having a high-aspect penetrating electrode and manufacturing method thereof

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- Number: US 8,786,091 B2
- Document ID: US8786091B2
- Status: Granted
- Kind: B2
- Application number: 13/059,720
- Filed: 2009-10-19
- Published: 2011-06-23
- Granted: 2014-07-22
- Earliest claimed: 2008-10-21
- Assignees: Canon Kabushiki Kaisha
- Applicants: Tadayoshi Muta
- Inventors: Tadayoshi Muta
- Web page: https://patentgrep.com/patent/US8786091B2

## CPC

- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes}
- H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates}
- H10W 20/0261: {characterised by the filling method or the material of the conductive fill}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/2125: {Top-view shapes}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor apparatus with a penetrating electrode having a high aspect ratio is manufactured with a low-temperature process. In one embodiment a first electrode 3 and a second electrode 6 of a semiconductor substrate 1 that are provided at the front and rear surface sides, respectively, are electrically connected by a conductive object 7 filled in a contact hole 4 and an extended portion 6a of the second electrode 6 extends to the contact hole 4. Even though the contact hole 4 has a high aspect ratio, film formation using the low-temperature process is enabled by using the conductive object 7, instead of forming the second electrode 6 on a bottom portion of the contact hole 4.

## Claims

### Claim 1

A semiconductor apparatus, comprising:
a semiconductor substrate having a front surface and a rear surface;
a first electrode provided on said front surface;
a second electrode provided on said rear surface;
a contact hole formed in said semiconductor substrate, penetrating said semiconductor substrate so as to connect said first electrode and said second electrode;
an insulating film formed on a side of said contact hole; and
a conductive member filled in said contact hole so as to connect to said first electrode,
wherein said second electrode has an extended portion that extends from said rear surface, said extended portion being formed on a portion of said insulating film formed on the side of said contact hole, and said extended portion and said conductive member, which is filled in said contact hole so as to overlap with said extended portion, are connected, to connect electrically said first electrode and said second electrode.

### Claim 2 (depends on 1)

The semiconductor apparatus of claim 1, wherein said second electrode comprises one of Ti, Au, TiN, Ni and tungsten.

### Claim 3 (depends on 1)

The semiconductor apparatus of claim 1, wherein said conductive member comprises one of copper, silver and Ni.

### Claim 4

A method of manufacturing a semiconductor apparatus, comprising:
forming a first electrode on a front surface of a semiconductor substrate, which also has a rear surface;
forming a contact hole in the semiconductor substrate to penetrate the semiconductor substrate from the front surface to the rear surface;
forming an insulating film on a side of the contact hole;
forming a second electrode, having an extended portion extending from the rear surface, on at rear surface side with a low-temperature process, the extended portion being formed on a portion of the insulating film formed on the side of the contact hole; and
filling a conductive object in the contact hole, in the contact hole so as to overlap with the extended portion, so that the extended portion and the conductive object are connected, to connect electrically the first electrode and the second electrode.

### Claim 5 (depends on 4)

A method of manufacturing a semiconductor apparatus according to claim 4, wherein the extended portion is formed by depositing metal particles using one of sputtering and ion coating method.

### Claim 6 (depends on 5)

A method of manufacturing a semiconductor apparatus according to claim 5, wherein an incident angle of the metal particle in the sputtering and ion coating method is 20° or more and 85° or less to the side of the contact hole.

### Claim 7 (depends on 4)

A method of manufacturing a semiconductor apparatus according to claim 4, wherein the metal particles comprise one of Ti, Au, TiN, Ni and tungsten.

### Claim 8 (depends on 1)

A The semiconductor apparatus of claim 1, wherein said contact hole is tapered.

### Claim 9 (depends on 1)

A The semiconductor apparatus of claim 1, wherein a sectional shape of said contact hole is one of a circular shape, a triangular shape and a multi-angular shape.

### Claim 10 (depends on 1)

A The semiconductor apparatus of claim 1, wherein said extended portion is formed on a portion of said insulating film formed on the side of said contact hole in a circumferential direction.

### Claim 11 (depends on 1)

The semiconductor apparatus of claim 1, wherein a barrier seed layer is formed on said first electrode.