# US 8,786,090 B2 · Al alloy film for display device, display device, and sputtering target

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- Number: US 8,786,090 B2
- Document ID: US8786090B2
- Status: Granted
- Kind: B2
- Application number: 12/312,907
- Filed: 2007-11-27
- Published: 2010-03-18
- Granted: 2014-07-22
- Earliest claimed: 2006-11-30
- Assignees: Kobe Steel, Ltd.
- Applicants: Hiroshi Gotou; Katsufumi Tomihisa; Aya Hino; Hiroyuki Okuno; Junichi Nakai; Nobuyuki Kawakami; Mototaka Ochi
- Inventors: Hiroshi Gotou; Katsufumi Tomihisa; Aya Hino; Hiroyuki Okuno; Junichi Nakai; Nobuyuki Kawakami; Mototaka Ochi
- Web page: https://patentgrep.com/patent/US8786090B2

## CPC

- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6737: {characterised by the electrode materials}
- H10D 30/6743: {Silicon}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10W 20/4407: {Aluminium alloys}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.

## Claims

### Claim 1

An Al alloy film, comprising:
Al,
Ge in an amount of 0.05 to 0.5 at %, and
Gd, La, or both in a total amount of 0.05 to 0.45 at %.

### Claim 2

A display device comprising an amorphous Si layer or a polycrystalline Si layer on a substrate, and
an Al alloy film directly connected to the amorphous Si layer or polycrystalline Si layer,
wherein the Al alloy film comprises:
Al,
Ge in an amount of 0.05 to 0.5 at %, and
Gd, La, or both in a total amount of 0.05 to 0.45 at %.

### Claim 3 (depends on 1)

The Al alloy film of claim 1, wherein:
the total amount of Gd, La, or both is 0.05 to 0.35 at %.

### Claim 4 (depends on 1)

The Al alloy film of claim 1, further comprising:
Ni in an amount of 0.05 to 0.35 at %,
wherein a total amount of Ge and Ni is 0.45 at % or less.

### Claim 5 (depends on 2)

The display device of claim 2,
wherein the total amount of Gd, La, or both is 0.05 to 0.35 at %.

### Claim 6 (depends on 2)

The display device of claim 2,
wherein the Al alloy film further comprises Ni in an amount of 0.05 to 0.35 at %, and
a total amount of Ge and Ni is 0.45 at % or less.

### Claim 7 (depends on 1)

A display device, comprising:
the Al alloy film of claim 1, and
a thin film transistor.

### Claim 8 (depends on 2)

The display device of claim 2, further comprising a thin film transistor.

### Claim 9 (depends on 1)

A display device, comprising:
a conductive oxide film,
a gate electrode of a thin film transistor, the gate electrode comprising the Al alloy film of claim 1, directly connected to the conductive oxide film and
a scanning line comprising the Al alloy film of claim 1, directly connected to the conductive oxide film.

### Claim 10 (depends on 1)

A display device, comprising:
a conductive oxide film,
a source electrode, a drain electrode, or both a source electrode and a drain electrode of a thin film transistor, wherein the source electrode, drain electrode, or both comprise the Al alloy film of claim 1 and are directly connected to the conductive oxide film, and
a signal line comprising the Al alloy film of claim 1, wherein the signal line is directly connected to the conductive oxide film.

### Claim 11 (depends on 2)

The display device of claim 2, further comprising:
a source electrode, a drain electrode, or both a source electrode and a drain electrode of a thin film transistor, wherein the source electrode, drain electrode, or both comprise the Al alloy film, and
a signal line comprising the Al alloy film.

### Claim 12 (depends on 7)

The display device of claim 7, wherein a source electrode, a drain electrode, or both a source electrode and a drain electrode of the thin film transistor, and a signal line are of a material of a gate electrode of the thin film transistor and of a scanning line.

### Claim 13 (depends on 8)

The display device of claim 8, wherein a source electrode, a drain electrode, or both a source electrode and a drain electrode of the thin film transistor, and a signal line are of a material of a gate electrode of the thin film transistor and of a scanning line.

### Claim 14 (depends on 9)

The display device of claim 9, wherein a source electrode, a drain electrode, or both a source electrode and a drain electrode of the thin film transistor, and a signal line are of a material of the gate electrode and of the scanning line.

### Claim 15 (depends on 10)

The display device of claim 10, wherein the source electrode, the drain electrode, or both the source electrode and the drain electrode and the signal line are of a material of a gate electrode of the thin film transistor and of a scanning line.

### Claim 16 (depends on 11)

The display device of claim 11, wherein the source electrode, the drain electrode, or both the source electrode and the drain electrode, and the signal line are of a material of a gate electrode of the thin film transistor and of a scanning line.

### Claim 17 (depends on 7)

The display device of claim 7, further comprising:
a conductive oxide film comprising at least one composite oxide selected from the group consisting of indium oxide, zinc oxide, tin oxide, and titanium oxide.

### Claim 18 (depends on 9)

The display device of claim 9, wherein the conductive oxide film comprises at least one composite oxide selected from the group consisting of indium oxide, zinc oxide, tin oxide, and titanium oxide.

### Claim 19 (depends on 10)

The display device of claim 10, wherein the conductive oxide film comprises at least one composite oxide selected from the group consisting of indium oxide, zinc oxide, tin oxide, and titanium oxide.

### Claim 20 (depends on 7)

The display device of claim 7, wherein an electric resistivity of the Al alloy film is 4.5 μΩ·cm or less.

### Claim 21 (depends on 8)

The display device of claim 8, wherein an electric resistivity of the Al alloy film is 4.5 μΩ·cm or less.

### Claim 22 (depends on 9)

The display device of claim 9, wherein an electric resistivity of the Al alloy film is 4.5 μΩ·cm or less.

### Claim 23 (depends on 10)

The display device of claim 10, wherein an electric resistivity of the Al alloy film is 4.5 μΩ·cm or less.

### Claim 24 (depends on 11)

The display device of claim 11, wherein an electric resistivity of the Al alloy film is 4.5 μΩ·cm or less.

### Claim 25

A sputtering target, comprising:
Al,
Ge in an amount of 0.05 to 0.5 at %, and
Gd, La, or both in a total amount of 0.05 to 0.45 at %.

### Claim 26 (depends on 25)

The sputtering target of claim 25, further comprising:
Ni in an amount of 0.05 to 0.35 at %,
wherein a total amount of Ge and Ni is 0.45 at % or less.