# US 8,786,086 B2 · Semiconductor device including wiring having main portion and extended portion

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- Number: US 8,786,086 B2
- Document ID: US8786086B2
- Status: Granted
- Kind: B2
- Application number: 12/639,565
- Filed: 2009-12-16
- Published: 2010-07-01
- Granted: 2014-07-22
- Earliest claimed: 2008-12-25
- Assignees: Fujitsu Limited
- Applicants: Takashi Suzuki
- Inventors: Takashi Suzuki
- Web page: https://patentgrep.com/patent/US8786086B2

## CPC

- H10W 20/063: {by forming conductive members before forming protective insulating material}
- H10W 20/082: {the openings being tapered via holes}
- H10W 20/031: {of conductive parts of the interconnections}
- H10W 20/0633: {using subtractive patterning of the conductive members}
- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 20/435: {Cross-sectional shapes or dispositions of interconnections}
- H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants
- H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers}
- H10W 20/075: {of multilayered thin functional dielectric layers}
- H10W 20/084: {for dual-damascene structures}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a semiconductor substrate; an insulating film formed over the semiconductor substrate, there being formed in the insulating film a trench that in a sectional view has a stepped shape; and a wiring formed in the trench, wherein the wiring includes, a main portion with a first thickness; and an extended portion with a second thickness that is thinner than the first thickness and that extends outward from a side of the main portion.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor substrate;
a first insulating cap layer formed over the semiconductor substrate;
an interlayer insulating film formed over the first insulating cap layer including a via and a trench on the via, the trench including a sidewall of a stepped shape over the via;
a wiring formed in the trench, the wiring being different from the via; and
a second insulating cap layer formed over the interlayer insulating film,
wherein the wiring over the via includes, a main portion with a first thickness provided over the via; and
an extended portion, provided over the main portion, with a second thickness that is thinner than the first thickness and that extends outward from a side of the main portion,
a material of the interlayer insulating film is different from a material of the first insulating cap layer and a material of the second insulating cap layer.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein: the extended portion is formed at both sides of the main portion.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising: a barrier metal film formed between the interlayer insulating film and the main portion.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein: the barrier metal film also is formed between the interlayer insulating film and the extended portion.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein: the wiring includes copper.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein: the first thickness is about 600 nm or more.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein: the second thickness is about 660 nm or less.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein: the extended portion extends about 150 nm or more from the main portion.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein: the wiring includes linear segments and at least one corner part that couples linear segments, wherein the extended portion of the corner part extends further from the corresponding main portion than the extended portion of a linear segment extends from the corresponding main portion.

### Claim 10 (depends on 9)

The semiconductor device according to claim 9, wherein: a shape of the extended portion included in the corner part is, in a plan view, generally squared or generally arcuate.

### Claim 11 (depends on 1)

The semiconductor device according to claim 1, wherein the wiring is included in an inductor-configuration.

### Claim 12 (depends on 11)

The semiconductor device according to claim 11, wherein: the insulating film includes a plurality of metal particulates.

### Claim 13 (depends on 1)

The semiconductor device according to claim 1, wherein: the interlayer insulating film includes a first insulating film and a second insulating film, and the first insulating film is in contact with a side of the main portion and the second insulating film is in contact with a side of the extended portion.

### Claim 14 (depends on 13)

The semiconductor device according to claim 13, wherein etching characteristics of the first insulating film and the second insulating film differ.

### Claim 15 (depends on 1)

The semiconductor device according to claim 1, wherein: the extended portion in a sectional view has a stepped shape and includes first and second sub-portions; the first sub-portion has a third thickness; the second sub-portion has a fourth thickness; each of the third and fourth thicknesses are thinner than the first thickness; and the second sub-portion extends further outward from a side of the main portion than does the first sub-portion.