# US 8,786,085 B2 · Semiconductor structure and method for making same

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- Number: US 8,786,085 B2
- Document ID: US8786085B2
- Status: Granted
- Kind: B2
- Application number: 13/671,573
- Filed: 2012-11-08
- Published: 2013-03-14
- Granted: 2014-07-22
- Earliest claimed: 2010-09-29
- Assignees: Infineon Technologies AG
- Applicants: Infineon Technologies AG
- Inventors: Hans-Joachim Barth; Mathias Vaupel; Rainer Steiner; Werner Robl; Jens Pohl; Joern Plagmann; Gottfried Beer
- Web page: https://patentgrep.com/patent/US8786085B2

## CPC

- H10W 20/033: {in openings in dielectrics}
- H10W 20/057: {by selectively depositing, e.g. by using selective CVD or plating}
- H10W 20/084: {for dual-damascene structures}
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 72/019: {of bond pads}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 72/251: {Materials}
- H10W 72/29: Bond pads specially adapted therefor
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

One or more embodiments relate to a semiconductor structure, comprising: a barrier layer overlying a workpiece surface; a seed layer overlying the barrier layer; an inhibitor layer overlying said seed layer, the inhibitor layer having a opening exposing a portion of the seed layer, and a fill layer overlying the exposed portion of the seed layer.

## Claims

### Claim 1

A semiconductor structure, comprising:
a workpiece including a opening
a barrier layer overlying a bottom and a sidewall surface of said opening;
a seed layer overlying a bottom and a sidewall surface of said barrier layer;
an inhibitor layer overlying at least a top surface of said seed layer; and
a fill layer disposed within said opening and overlies at least a bottom surface of said seed layer,
wherein said inhibitor layer comprises Ta (tantalum).

### Claim 2 (depends on 1)

The structure of claim 1, wherein said Ta (tantalum) is in the form of tantalum metal and/or tantalum alloy and/or tantalum compound.

### Claim 3 (depends on 1)

The structure of claim 1, wherein said fill layer overlies at least a portion of a sidewall surface of said seed layer.

### Claim 4 (depends on 1)

The structure of claim 1, wherein said fill layer overlies substantially all of said sidewall surface of said seed layer.

### Claim 5 (depends on 1)

The structure of claim 1, wherein said workpiece comprises a semiconductor substrate.

### Claim 6 (depends on 1)

The structure of claim 1, wherein said fill layer and/or said seed layer comprises copper metal and/or a copper alloy.

### Claim 7 (depends on 1)

The structure of claim 1, wherein said workpiece comprises a dielectric layer, said opening disposed in said dielectric layer.

### Claim 8

A semiconductor structure, comprising:
a workpiece, said workpiece including a opening;
a barrier layer disposed within said opening;
a seed layer overlying said barrier layer within said opening;
an inhibitor layer overlying said seed layer outside said opening, said seed layer having an exposed portion within said opening; and
a fill layer overlying said portion of said seed layer within said opening,
wherein said inhibitor layer comprises Ta (tantalum).

### Claim 9 (depends on 8)

The structure of claim 8, wherein said Ta (tantalum) is in the form of tantalum metal, tantalum alloy and/or tantalum compound.

### Claim 10 (depends on 8)

The structure of claim 8, wherein said fill layer overlies a bottom surface and a sidewall surface of said seed layer within said opening.

### Claim 11 (depends on 8)

The structure of claim 8, wherein said seed layer and/or said fill layer comprises copper and/or a copper alloy.

### Claim 12 (depends on 8)

The structure of claim 8, wherein said barrier layer and/or said inhibitor layer comprises tantalum metal and/or a tantalum alloy and/or a tantalum compound.

### Claim 13 (depends on 8)

The structure of claim 8, the wherein said workpiece comprises a dielectric layer, said opening disposed in said dielectric layer.

### Claim 14 (depends on 8)

The structure of claim 8, wherein said Ta (tantalum) is in the form of tantalum metal, tantalum alloy and/or tantalum compound.

### Claim 15 (depends on 8)

The structure of claim 8, wherein said fill layer overlies a bottom surface and a sidewall surface of said seed layer within said opening.

### Claim 16 (depends on 8)

The structure of claim 8, wherein said seed layer and/or said fill layer comprises copper and/or a copper alloy.

### Claim 17 (depends on 8)

The structure of claim 8, wherein said barrier layer and/or said inhibitor layer comprises tantalum metal and/or a tantalum alloy and/or a tantalum compound.

### Claim 18 (depends on 8)

The structure of claim 8, the wherein said workpiece comprises a dielectric layer, said opening disposed in said dielectric layer.

### Claim 19

A semiconductor structure, comprising:
a workpiece, said workpiece including a opening;
a barrier layer disposed within said opening;
a seed layer overlying said barrier layer within said opening;
an inhibitor layer overlying said seed layer outside said opening, said seed layer having a portion within said opening that is not covered by said inhibitor layer; and
a fill layer overlying said portion of said seed layer within said opening,
wherein said inhibitor layer comprises Ta (tantalum).