# US 8,786,077 B2 · Semiconductor device having a first substrate containing circuit element connected to radiation plate on a cover plate with metal vias

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- Number: US 8,786,077 B2
- Document ID: US8786077B2
- Status: Granted
- Kind: B2
- Application number: 13/333,099
- Filed: 2011-12-21
- Published: 2012-12-13
- Granted: 2014-07-22
- Earliest claimed: 2011-06-07
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Jeoungchill Shim
- Inventors: Jeoungchill Shim
- Web page: https://patentgrep.com/patent/US8786077B2

## CPC

- H10W 20/484: {Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes}
- H10W 40/10: Arrangements for heating
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/90: Bond pads, in general
- H10W 76/12: characterised by their shape
- H10W 72/29: Bond pads specially adapted therefor
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Certain embodiments provide a semiconductor device including a first substrate, a circuit element, a second substrate, a metal layer, and a radiation plate. The circuit element is formed on a front surface of the first substrate and has an electrode. The second substrate has a first face, and is laminated on the first substrate so that the first face of the second substrate faces a front surface of the first substrate. The second substrate has a via hole arranged on the electrode. The metal layer is formed inside of the via hole. The radiation plate is formed on a second face of the second substrate, and is connected to the metal layer.

## Claims

### Claim 1

A semiconductor device comprising:
a first substrate;
a circuit element formed on a front surface of the first substrate and having a plurality of electrodes;
a second substrate having a first face and laminated on the first substrate so that the first face of the second substrate faces the front surface of the first substrate, the second substrate having a plurality of via holes respectively arranged on the plurality of electrodes; and
a plurality of metal layers respectively formed inside of the plurality of via holes the plurality of metal layers connecting with the plurality of electrodes; and
a plurality of radiation plates formed on a second face of the second substrate and respectively connected to the plurality of metal layers,
wherein the second substrate has a plurality of protruding portions which are formed so as to protrude from the first face and to connect with the plurality of electrodes, the plurality of protruding portions being made of the same material as that of the second substrate and being formed on the first face so as to be spaced apart from each other,
the plurality of via holes penetrate through the second substrate and the plurality of protruding portions, and
there are spaces between the plurality of protruding portions of the second substrate.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the circuit element has an element region formed on a front surface of the first substrate and including an impurity diffusion region of a semiconductor element, and at least one of the plurality of electrodes is an electrode pad connected to an electrode formed on the element region.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein one of the plurality of electrodes is a drain electrode, and
one of the plurality of radiation plates is connected to the drain electrode.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the plurality of electrodes are a drain electrode, a source electrode having a source pad, and a gate electrode having a gate pad, and
a height of the protruding portion connected to the gate pad differs from a height of the protruding portion connected to the drain electrode and a height of the protruding portion connected to the source pad.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the first substrate and the second substrate are formed with the same material.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein at least one of the radiation plates includes a radiation fin.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6, wherein the radiation plate having the radiation fin is connected to a drain electrode.