# US 8,786,066 B2 · Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same

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- Number: US 8,786,066 B2
- Document ID: US8786066B2
- Status: Granted
- Kind: B2
- Application number: 12/890,082
- Filed: 2010-09-24
- Published: 2012-03-29
- Granted: 2014-07-22
- Earliest claimed: 2010-09-24
- Assignees: Intel Corporation
- Applicants: John S. Guzek; Ravi K. Nalla; Javier Soto Gonzalez; Drew Delaney; Suresh Pothukuchi; Mohit Mamodia; Edward Zarbock; Johanna M. Swan
- Inventors: John S. Guzek; Ravi K. Nalla; Javier Soto Gonzalez; Drew Delaney; Suresh Pothukuchi; Mohit Mamodia; Edward Zarbock; Johanna M. Swan
- Web page: https://patentgrep.com/patent/US8786066B2

## CPC

- H10W 70/611: {for connecting multiple chips together}
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 70/614: {the multiple chips being integrally enclosed}
- H10W 70/635: {Through-vias}
- H10W 90/00: Package configurations
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 70/655: Fan-out layouts
- H10W 72/0198: {batch processes}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/874: {On different surfaces}
- H10W 72/9413: {on encapsulations}
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 90/722: {between stacked chips}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/753: {between laterally-adjacent chips}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An apparatus includes a coreless substrate with a through-silicon via (TSV) embedded die that is integral to the coreless substrate. The apparatus includes a subsequent die that is coupled to the TSV die and that is disposed above the coreless substrate.

## Claims

### Claim 1

An apparatus, comprising: a die including a through-silicon via disposed therein (TSV die); wherein the TSV die is embedded in a first dielectric layer of a coreless substrate, wherein the coreless substrate includes a land side and a die side; wherein the TSV die includes an active surface and a backside surface; wherein the active surface is closer to the die side than to the land side; and wherein at least one trace disposed within the coreless substrate is connected to at least one die bond pad on the TSV die active surface through a filled via disposed within the first dielectric layer of the coreless substrate.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the land side is mounted to a foundation substrate.

### Claim 3 (depends on 1)

The apparatus of claim 1, wherein the TSV die is fully embedded in the coreless substrate.

### Claim 4 (depends on 1)

The apparatus of claim 1, wherein the TSV die is fully embedded in the coreless substrate, the apparatus further including: a subsequent die disposed above the die side and coupled to the TSV die though at least one TSV.

### Claim 5 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die and is fully embedded in the coreless substrate, the apparatus further including: a second TSV die disposed above the die side and in contact to the TSV first die; a third TSV die disposed above and in contact to the second TSV die; a fourth TSV die disposed above and in contact to the third TSV die; and a subsequent die disposed above and in contact to the fourth TSV die.

### Claim 6 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die and is fully embedded in the coreless substrate, the apparatus further including: a second TSV die disposed above the die side and in contact to the first TSV die; a third TSV die disposed above and in contact to the second TSV die; a fourth TSV die disposed above and in contact to the third TSV die; a fifth TSV die disposed above and in contact to the fourth TSV die; a sixth TSV die disposed above and in contact to the fifth TSV die; and a subsequent die disposed above and in contact to the sixth TSV die.

### Claim 7 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is fully embedded in the coreless substrate, the apparatus further including: a lateral-stack TSV die that is fully embedded in the coreless substrate; and a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV.

### Claim 8 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is fully embedded in the coreless substrate, the apparatus further including: a first lateral-stack TSV die that is fully embedded in the coreless substrate; a subsequent lateral-stack die disposed above the die side and coupled to the first lateral-stack TSV die through at least one TSV; and a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV.

### Claim 9 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is fully embedded in the coreless substrate, the apparatus further including: a second TSV die in contact with the first TSV die; a subsequent TSV die disposed above the die side and coupled to the second TSV die through at least one TSV; a first lateral-stack TSV die that is fully embedded in the coreless substrate; a second lateral-stack TSV die in contact with the first lateral-stack TSV die; a third lateral-stack TSV die in contact with the second lateral-stack TSV die; and a subsequent lateral-stack die disposed above the die side and coupled to the third lateral-stack TSV die through at least one TSV.

### Claim 10 (depends on 1)

The apparatus of claim 1, wherein the TSV die is fully embedded in the coreless substrate, the apparatus further including: at least one package-on-package (POP) bond pad disposed on the die side.

### Claim 11 (depends on 1)

The apparatus of claim 1, wherein the TSV die is fully embedded in the coreless substrate, the apparatus further including: at least one POP bond pad disposed on the die side; and a device module disposed upon the die side and in contact with the POP bond pad.

### Claim 12 (depends on 1)

The apparatus of claim 1, wherein the TSV die is fully embedded in the coreless substrate, the apparatus further including: at least one package-on-package (POP) bond pad disposed on the die side; and a subsequent die disposed above the die side and coupled to the TSV die though at least one TSV.

### Claim 13 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is fully embedded in the coreless substrate, the apparatus further including: a first lateral TSV die that is fully embedded in the coreless substrate; a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV; a subsequent lateral die disposed above the die side and coupled to the first lateral TSV die though at least one TSV; and at least one package-on-package (POP) bond pad disposed on the die side.

### Claim 14 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is fully embedded in the coreless substrate, the apparatus further including: a first lateral TSV die that is fully embedded in the coreless substrate; a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV; a subsequent lateral die disposed above the die side and coupled to the first lateral TSV die though at least one TSV; a first package-on-package (POP) bond pad disposed on the die side; a first POP package disposed on the die side and in contact with the first POP bond pad; a subsequent POP bond pad disposed on the die side; and a subsequent POP package disposed on the die side and in contact with the subsequent POP bond pad.

### Claim 15 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is fully embedded in the coreless substrate, the apparatus further including: at least one package-on-package (POP) bond pad disposed on the die side; a first lateral-stack TSV die that is fully embedded in the coreless substrate; a subsequent lateral-stack die disposed above the die side and coupled to the first lateral-stack TSV die through at least one TSV; and a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV.

### Claim 16 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is fully embedded in the coreless substrate, the apparatus further including: at least one package-on-package (POP) bond pad disposed on the die side; a second TSV die in contact with the first TSV die; a subsequent TSV die disposed above the die side and coupled to the second TSV die through at least one TSV; a first lateral-stack TSV die that is fully embedded in the coreless substrate; a second lateral-stack TSV die in contact with the first lateral-stack TSV die; a third lateral-stack TSV die in contact with the second lateral-stack TSV die; and a subsequent lateral-stack die disposed above the die side and coupled to the third lateral-stack TSV die through at least one TSV.

### Claim 17 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is fully embedded in the coreless substrate, the apparatus further including: a first lateral TSV die that that is fully embedded in the coreless substrate; and a subsequent die disposed above the die side and coupled to the TSV die though at least one TSV.

### Claim 18 (depends on 1)

The apparatus of claim 1, wherein the embedded die is partially embedded in the coreless substrate.

### Claim 19 (depends on 1)

The apparatus of claim 1, wherein the TSV die is partially embedded in the coreless substrate, the apparatus further including: a subsequent die disposed above the die side and coupled to the TSV die though at least one TSV.

### Claim 20 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die and is partially embedded in the coreless substrate, the apparatus further including: a second TSV die disposed above the die side and in contact to the TSV first die; a third TSV die disposed above and in contact to the second TSV die; a fourth TSV die disposed above and in contact to the third TSV die; and a subsequent die disposed above and in contact to the fourth TSV die.

### Claim 21 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die and is partially embedded in the coreless substrate, the apparatus further including: a second TSV die disposed above the die side and in contact to the first TSV die; a third TSV die disposed above and in contact to the second TSV die; a fourth TSV die disposed above and in contact to the third TSV die; a fifth TSV die disposed above and in contact to the fourth TSV die; a sixth TSV die disposed above and in contact to the fifth TSV die; and a subsequent die disposed above and in contact to the sixth TSV die.

### Claim 22 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is partially embedded in the coreless substrate, the apparatus further including: a lateral-stack TSV die that is partially embedded in the coreless substrate; and a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV.

### Claim 23 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is partially embedded in the coreless substrate, the apparatus further including: a first lateral-stack TSV die that is partially embedded in the coreless substrate; a subsequent lateral-stack die disposed above the die side and coupled to the first lateral-stack TSV die through at least one TSV; and a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV.

### Claim 24 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is partially embedded in the coreless substrate, the apparatus further including: a second TSV die in contact with the first TSV die; a subsequent TSV die disposed above the die side and coupled to the second TSV die through at least one TSV; a first lateral-stack TSV die that is partially embedded in the coreless substrate; a second lateral-stack TSV die in contact with the first lateral-stack TSV die; a third lateral-stack TSV die in contact with the second lateral-stack TSV die; and a subsequent lateral-stack die disposed above the die side and coupled to the third lateral-stack TSV die through at least one TSV.

### Claim 25 (depends on 1)

The apparatus of claim 1, wherein the TSV die is partially embedded in the coreless substrate, the apparatus further including: at least one package-on-package (POP) bond pad disposed on the die side.

### Claim 26 (depends on 1)

The apparatus of claim 1, wherein the TSV die is partially embedded in the coreless substrate, the apparatus further including: at least one POP bond pad disposed on the die side; and a device module disposed upon the die side and in contact with the POP bond pad.

### Claim 27 (depends on 1)

The apparatus of claim 1, wherein the TSV die is partially embedded in the coreless substrate, the apparatus further including: at least one package-on-package (POP) bond pad disposed on the die side; and a subsequent die disposed above the die side and coupled to the TSV die though at least one TSV.

### Claim 28 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is partially embedded in the coreless substrate, the apparatus further including: a first lateral TSV die that is partially embedded in the coreless substrate; a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV; a subsequent lateral die disposed above the die side and coupled to the first lateral TSV die though at least one TSV; and at least one package-on-package (POP) bond pad disposed on the die side.

### Claim 29 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is partially embedded in the coreless substrate, the apparatus further including: a first lateral TSV die that is partially embedded in the coreless substrate; a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV; a subsequent lateral die disposed above the die side and coupled to the first lateral TSV die though at least one TSV; a first package-on-package (POP) bond pad disposed on the die side; a first POP package disposed on the die side and in contact with the first POP bond pad; a subsequent POP bond pad disposed on the die side; and a subsequent POP package disposed on the die side and in contact with the subsequent POP bond pad.

### Claim 30 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is partially embedded in the coreless substrate, the apparatus further including: at least one package-on-package (POP) bond pad disposed on the die side; a first lateral-stack TSV die that is partially embedded in the coreless substrate; a subsequent lateral-stack die disposed above the die side and coupled to the first lateral-stack TSV die through at least one TSV; and a subsequent die disposed above the die side and coupled to the first TSV die though at least one TSV.

### Claim 31 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is partially embedded in the coreless substrate, the apparatus further including: at least one package-on-package (POP) bond pad disposed on the die side; a second TSV die in contact with the first TSV die; a subsequent TSV die disposed above the die side and coupled to the second TSV die through at least one TSV; a first lateral-stack TSV die that is partially embedded in the coreless substrate; a second lateral-stack TSV die in contact with the first lateral-stack TSV die; a third lateral-stack TSV die in contact with the second lateral-stack TSV die; and a subsequent lateral-stack die disposed above the die side and coupled to the third lateral-stack TSV die through at least one TSV.

### Claim 32 (depends on 1)

The apparatus of claim 1, wherein the TSV die is a first TSV die that is partially embedded in the coreless substrate, the apparatus further including: a first lateral TSV die that that is partially embedded in the coreless substrate; and a subsequent die disposed above the die side and coupled to the TSV die though at least one TSV.

### Claim 33 (depends on 1)

The apparatus of claim 1, further including at least one wire-bond die with a bond wire in contact to the at least one TSV and coupled to the at least one wire-bond die.

### Claim 34

A computing system, comprising: a die including a through-silicon via disposed therein (TSV die); wherein the TSV die is embedded in a first dielectric layer of a coreless substrate, wherein the coreless substrate includes a land side and a die side; wherein the TSV die includes an active surface and a backside surface; wherein the active surface is closer to the die side than to the land side; and a foundation substrate coupled to the TSV die; and wherein at least one trace disposed within the coreless substrate is connected to at least one die bond pad on the TSV die active surface through a filled via disposed within the first dielectric layer of the coreless substrate.

### Claim 35 (depends on 34)

The computing system of claim 34, further including external memory coupled to the TSV die.

### Claim 36 (depends on 34)

The computing system of claim 34, wherein the computing system is part of one of a cellular telephone, a pager, a hand-held reader, a portable computer, a desktop computer, and a two-way radio.