# US 8,786,060 B2 · Semiconductor package integrated with conformal shield and antenna

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- Number: US 8,786,060 B2
- Document ID: US8786060B2
- Status: Granted
- Kind: B2
- Application number: 13/464,910
- Filed: 2012-05-04
- Published: 2013-11-07
- Granted: 2014-07-22
- Earliest claimed: 2012-05-04
- Assignees: Advanced Semiconductor Engineering, Inc.
- Applicants: Han-Chee Yen; Chi-Sheng Chung; Kuo-Hsien Liao; Yung-I Yeh
- Inventors: Han-Chee Yen; Chi-Sheng Chung; Kuo-Hsien Liao; Yung-I Yeh
- Web page: https://patentgrep.com/patent/US8786060B2

## CPC

- H10W 70/657: {on sidewalls or bottom surfaces of the package substrates, interposers or redistribution layers}
- H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package}
- H01Q 9/0407: {Substantially flat resonant element parallel to ground plane, e.g. patch antenna (dipole H01Q9/285; monopole H01Q9/40)}
- H01Q 23/00: Antennas with active circuits or circuit elements integrated within them or attached to them
- H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes}
- H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates}
- H10W 20/0245: {comprising use of blind vias during the manufacture}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/423: {Shielding layers}
- H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers}
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/276: {the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation}
- H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
- H10W 70/614: {the multiple chips being integrally enclosed}
- H10W 72/0198: {batch processes}
- H10W 74/014: {using batch processing}
- H10W 90/00: Package configurations
- H10W 44/248: {for antennas}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/9413: {on encapsulations}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/10: characterised by their shape or disposition
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)

## Abstract

A semiconductor package includes a substrate, a semiconductor die, a package body, an electromagnetic interference shield, a dielectric structure and an antenna element. The substrate comprises a grounding segment and a feeding point. The semiconductor die is disposed on the substrate. The package body encapsulates the semiconductor die. The electromagnetic interference shield is formed on the package body. The dielectric structure encapsulates the electromagnetic interference shield. The antenna element is formed on the dielectric structure and electrically connecting the grounding segment of the substrate and the feeding point.

## Claims

### Claim 1

A semiconductor package, comprising:
a substrate;
a semiconductor die disposed on the substrate;
a package body encapsulating the semiconductor die and having an upper surface;
an electromagnetic interference shield formed directly on the upper surface of the package body;
a dielectric structure covering the electromagnetic interference shield;
an antenna formed on the dielectric structure;
a feeding element connecting the antenna and a feeding point of the substrate; and
an antenna grounding element connecting the antenna and the electromagnetic interference shield, wherein the feeding element penetrates the package body and the dielectric structure.

### Claim 2 (depends on 1)

The semiconductor package of claim 1, wherein the antenna grounding element is disposed within the dielectric structure.

### Claim 3 (depends on 1)

The semiconductor package of claim 1, wherein the antenna grounding element and the feeding element form an extension portion of the antenna on a lateral surface of the dielectric structure.

### Claim 4 (depends on 1)

The semiconductor package of claim 1, further comprising:
a grounding frame disposed on the substrate and connecting the substrate and the electromagnetic interference shield.

### Claim 5 (depends on 1)

The semiconductor package of claim 1, further comprising:
a dielectric material layer covering the dielectric structure;
wherein the permittivity of the dielectric material layer is higher than that of the dielectric structure.

### Claim 6 (depends on 1)

The semiconductor package of claim 1, wherein the antenna grounding element is a conductive via.

### Claim 7 (depends on 6)

The semiconductor package of claim 6, wherein the antenna grounding element penetrates the dielectric structure and connects the antenna and the electromagnetic interference shield.

### Claim 8 (depends on 6)

The semiconductor package of claim 6, wherein the antenna grounding element includes a conductive material disposed in a through hole in the dielectric structure, the through hole extending from the antenna to the electromagnetic interference shield.

### Claim 9 (depends on 1)

The semiconductor package of claim 1, wherein the electromagnetic interference shield is a film formed directly onto the package body.

### Claim 10 (depends on 9)

The semiconductor package of claim 9, wherein the film comprising the electromagnetic shield is formed by material deposition.

### Claim 11

A semiconductor package, comprising:
a substrate;
a semiconductor die disposed on the substrate;
a package body encapsulating the semiconductor die and having an upper surface;
an electromagnetic interference shield disposed directly on the upper surface of the package body;
a dielectric structure covering the electromagnetic interference shield;
an antenna formed on the dielectric structure;
a feeding element connecting the antenna and a feeding point of the substrate; and
a conductive via penetrating entirely through the dielectric structure connecting the antenna and the electromagnetic interference shield, forming an antenna grounding element wherein the feeding element penetrates the package body and the dielectric structure.

### Claim 12 (depends on 11)

The semiconductor package of claim 11, further comprising:
a grounding frame disposed on the substrate and connecting the substrate and the electromagnetic interference shield.

### Claim 13 (depends on 11)

The semiconductor package of claim 11, further comprising:
a dielectric material layer covering the dielectric structure;
wherein the permittivity of the dielectric material layer is higher than that of the dielectric structure.

### Claim 14 (depends on 13)

The semiconductor package of claim 13, wherein the dielectric material layer is a ceramic material.

### Claim 15 (depends on 11)

The semiconductor package of claim 11, wherein the package body further comprises a lateral side and the electromagnetic interference shield extends to, and is disposed directly on, the lateral side.

### Claim 16

A semiconductor package, comprising:
a substrate;
a die disposed on the substrate;
a package body encapsulating the die and having an upper surface;
an electromagnetic interference shield comprising a film disposed directly onto the upper surface of the package body;
a dielectric structure covering the electromagnetic interference shield;
an antenna disposed on an upper surface of the dielectric structure;
a feeding element connecting the antenna and a feeding point of the substrate; and
a conductive via formed in the dielectric structure connecting the antenna and the electromagnetic interference shield, forming an antenna grounding element wherein the feeding element penetrates the package body and the dielectric structure.

### Claim 17 (depends on 16)

The semiconductor package of claim 16, wherein the conductive via is formed in a through hole in the dielectric structure, the through hole extending from the antenna to the electromagnetic interference shield.

### Claim 18 (depends on 16)

The semiconductor package of claim 16, wherein the electromagnetic interference shield is formed by material deposition directly onto the package body.