# US 8,786,053 B2 · Gallium-nitride-on-handle substrate materials and devices and method of manufacture

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- Number: US 8,786,053 B2
- Document ID: US8786053B2
- Status: Granted
- Kind: B2
- Application number: 13/012,674
- Filed: 2011-01-24
- Published: 2012-07-26
- Granted: 2014-07-22
- Earliest claimed: 2011-01-24
- Assignees: Soraa, Inc.
- Applicants: Mark P. D'Evelyn; Arpan Chakraborty; William Houck
- Inventors: Mark P. D'Evelyn; Arpan Chakraborty; William Houck
- Web page: https://patentgrep.com/patent/US8786053B2

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- H10D 62/00: Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/851: Wavelength conversion means
- H10P 72/74: {using temporarily an auxiliary support}
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10W 72/30: Die-attach connectors
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/018: {Bonding of wafers}
- H10H 20/8312: {extending at least partially through the bodies}
- H10P 72/7416: {used during dicing or grinding}
- H10P 72/7426: {used as a support during build up manufacturing of active devices}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07554: {changes in dispositions}
- H10W 72/547: {Dispositions of multiple bond wires}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/753: {between laterally-adjacent chips}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

## Claims

### Claim 1

A gallium and nitrogen containing device comprising:
a handle substrate member comprising a first surface region and a second surface region, wherein the second surface region is opposite the first surface region;
an adhesion layer overlying the second surface region;
a gallium and nitrogen containing material overlying the adhesion layer, wherein the gallium and nitrogen containing material comprises at least one a core region extending through a thickness of the gallium and nitrogen containing material;
an interface region overlying the gallium and nitrogen containing material;
at least one n-type epitaxial growth region overlying the interface region;
at least one core structure extending from the at least one core region and through a thickness of the at least one n-type epitaxial growth region;
an active region overlying the at least one n-type epitaxial growth region;
a p-type region overlying the active region; and
at least one p-contact region overlying the p-type region.

### Claim 2 (depends on 1)

The device of claim 1, wherein the interface region is characterized by a defect density of less than about 106-107 cm−2 within a matrix of low-dislocation density regions adjacent to at least one core structure.

### Claim 3 (depends on 1)

The device of claim 1, wherein the gallium and nitrogen containing material comprises a dot core gallium and nitrogen containing substrate.

### Claim 4 (depends on 1)

The device of claim 1 wherein the second surface region comprises a patterned, textured, or roughened surface structure.

### Claim 5 (depends on 1)

The device of claim 1, further comprising:
at least one mesa structure, wherein the mesa structure comprises the active region, the p-type region, and the at least one p-contact region;
an exposed n-type epitaxial growth region adjacent the at least one mesa structure; and
at least one n-contact region overlying the exposed n-type epitaxial growth region.

### Claim 6 (depends on 1)

The device of claim 1, wherein the gallium and nitrogen containing material comprises a dot core gallium and nitrogen containing substrate.

### Claim 7 (depends on 1)

The device of claim 1, wherein the first surface region comprises a patterned, textured, or roughened surface structure.

### Claim 8 (depends on 1)

The device of claim 1, wherein the handle substrate comprises a material selected from sapphire, aluminum oxide, mullite, silicon, silicon nitride, germanium, gallium arsenide, silicon carbide, MgAl2O4 spinel, zinc oxide, indium tin oxide (ITO), indium oxide, tin oxide, indium phosphide, beryllium oxide, chemical-vapor-deposition (CVD) diamond, single crystal diamond, YAG: Ce, gallium nitride, indium nitride, gallium aluminum indium nitride, aluminum oxynitride, aluminum nitride, and a combination of any of the foregoing.

### Claim 9 (depends on 1)

The device of claim 1, further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region.

### Claim 10 (depends on 9)

The device of claim 9, wherein the at least one core region comprises a square array of core regions; and
the one or more p-contact regions are approximately square.

### Claim 11 (depends on 9)

The device of claim 9, wherein the at least one core region comprises a hexagonal array; and
the one or more adjacent p-contact regions are approximately triangular.

### Claim 12 (depends on 1)

The device of claim 1,
wherein the handle substrate member is electrically conducting; and
further comprising at least one n-contact region overlying the first surface region.

### Claim 13 (depends on 12)

The device of claim 12, wherein the interface region comprises a defect density of less than about 106 cm−2 to 107 cm−2 within the matrix region between cores.

### Claim 14 (depends on 12)

The device of claim 12, wherein the second surface region comprises a patterned, textured, or roughened surface structure.

### Claim 15 (depends on 12)

The device of claim 12, further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region.

### Claim 16 (depends on 1)

The device of claim 1,
wherein the handle substrate member is electrically insulating; and
further comprising:
at least one mesa structure, wherein the at least one mesa structure comprises the active region, the p-type region, and the at least one p-contact region;
an exposed n-type epitaxial growth region adjacent the at least one mesa structure; and
an n-contact region overlying the exposed n-type epitaxial growth region.

### Claim 17 (depends on 16)

The device of claim 16, wherein the interface region comprises a defect density of less than about 106 cm−2 to 107 cm−2 within the matrix region between cores.

### Claim 18 (depends on 16)

The device of claim 16, wherein the second surface region comprises a patterned, textured, or roughened surface structure.

### Claim 19 (depends on 16)

The device of claim 16, further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region.

### Claim 20 (depends on 1)

The device of claim 1,
wherein the handle substrate member is electrically conducting; and
further comprising:
at least one n-contact region overlying the first surface region; and
a second handle substrate member overlying the p-type active region, wherein,
the second handle substrate member is transparent or reflective, the second handle substrate member is electrically conductive; and
the at least one p-contact region overlies the second handle substrate.

### Claim 21 (depends on 20)

The device of claim 20, wherein the second handle substrate member comprises a material selected from indium tin oxide, ZnO, SnO, and silver-coated silicon.

### Claim 22 (depends on 20)

The device of claim 20, wherein the interface region comprises a defect density of less than about 106 cm−2 to 107 cm−2 within the matrix region between cores.

### Claim 23 (depends on 20)

The device of claim 20, wherein the second surface region comprises a patterned, textured, or roughened surface structure.

### Claim 24 (depends on 20)

The device of claim 20, further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region.