# US 8,786,038 B2 · Semiconductor storage device and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,786,038 B2 - Document ID: US8786038B2 - Status: Granted - Kind: B2 - Application number: 13/230,746 - Filed: 2011-09-12 - Published: 2012-03-22 - Granted: 2014-07-22 - Earliest claimed: 2010-09-22 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Keiji Hosotani; Hiroyuki Kanaya - Inventors: Keiji Hosotani; Hiroyuki Kanaya - Web page: https://patentgrep.com/patent/US8786038B2 ## CPC - H10N 50/01: Manufacture or treatment - H10B 61/22: {of the field-effect transistor [FET] type} - H10N 50/10: Magnetoresistive devices - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A semiconductor storage device according to the present embodiment includes a selection element formed on a surface of a semiconductor substrate. A lower electrode is connected to the selection element. A magnetic tunnel junction element is provided on the lower electrode. An upper electrode is provided on the magnetic tunnel junction element. A growth layer is provided on the upper electrode and is composed of a conductive material and has a larger area than the upper electrode when viewed from above the surface of the semiconductor substrate. A wiring line is provided on the growth layer. ## Claims ### Claim 1 A semiconductor storage device comprising: selection elements on a surface of a semiconductor substrate; lower electrodes connected to the selection elements; magnetic tunnel junction elements on the lower electrodes; upper electrodes on the magnetic tunnel junction elements; growth layers on the upper electrodes, the growth layers being formed by using a conductive material and having larger areas than the upper electrodes when viewed from above the surface of the semiconductor substrate, the growth layers being selectively formed on the upper electrodes, separately, so as to correspond to the respective upper electrodes; and a wiring on the growth layers. ### Claim 2 (depends on 1) The device according to claim 1, wherein outer edges of the growth layers are outside outer edges of the upper electrodes, respectively, when viewed from above the surface of the semiconductor substrate. ### Claim 3 (depends on 1) The device according to claim 1, wherein the wiring is in contact with top surfaces of the growth layers and side surfaces or parts of back-side surfaces of the growth layers. ### Claim 4 (depends on 2) The device according to claim 2, wherein the wiring is in contact with top surfaces of the growth layers and side surfaces or parts of back-side surfaces of the growth layers. ### Claim 5 (depends on 1) The device according to claim 1, further comprising a protective film configured to cover sides of the magnetic tunnel junction elements. ### Claim 6 (depends on 2) The device according to claim 2, further comprising a protective film configured to cover sides of the magnetic tunnel junction elements. ### Claim 7 (depends on 3) The device according to claim 3, further comprising a protective film configured to cover sides of the magnetic tunnel junction elements. ### Claim 8 (depends on 5) The device according to claim 5, wherein a material of the upper electrodes differs from a material of the lower electrodes. ### Claim 9 (depends on 5) The device according to claim 5, wherein the growth layers are formed by using a material that epitaxially grows on a material of the upper electrodes but does not epitaxially grow on a material of the lower electrodes. ### Claim 10 A semiconductor storage device comprising: selection elements on a surface of a semiconductor substrate; lower electrodes connected to the selection elements; magnetic tunnel junction elements on the lower electrodes; upper electrodes on the magnetic tunnel junction elements; growth layers on the upper electrodes, the growth layers being formed by using a conductive material; and a wiring on the growth layers, wherein the growth layers respectively correspond to the upper electrodes and are provided between the upper electrodes and the wiring, wherein outer edges of the growth layers are outside outer edges of the upper electrodes, respectively, when viewed from above the surface of the semiconductor substrate. ### Claim 11 A semiconductor storage device comprising: selection elements on a surface of a semiconductor substrate; lower electrodes connected to the selection elements; magnetic tunnel junction elements on the lower electrodes; upper electrodes on the magnetic tunnel junction elements; growth layers on the upper electrodes, the growth layers being formed by using a conductive material; and a wiring on the growth layers, wherein the growth layers respectively correspond to the upper electrodes and are provided between the upper electrodes and the wiring, wherein the wiring is in contact with top surfaces of the growth layers and side surfaces or parts of back-side surfaces of the growth layers. ### Claim 12 (depends on 10) The device according to claim 10, wherein the wiring is in contact with top surfaces of the growth layers and side surfaces or parts of back-side surfaces of the growth layers. ### Claim 13 (depends on 10) The device according to claim 10, further comprising a protective film configured to cover sides of the magnetic tunnel junction elements. ### Claim 14 (depends on 11) The device according to claim 11, further comprising a protective film configured to cover sides of the magnetic tunnel junction elements. ### Claim 15 (depends on 13) The device according to claim 13, wherein a material of the upper electrodes differs from a material of the lower electrodes. ### Claim 16 (depends on 13) The device according to claim 13, wherein the growth layers are formed by using a material that epitaxially grows on a material of the upper electrodes but does not epitaxially grow on a material of the lower electrodes. ### Claim 17 (depends on 14) The device according to claim 14, wherein a material of the upper electrodes differs form a material of the lower electrodes. ### Claim 18 (depends on 14) The device according to claim 14, wherein the growth layers are formed by using a material that epitaxially grows on a material of the upper electrodes but does not epitaxially grow on a material of the lower electrodes.