# US 8,786,035 B2 · Electronic device having MEMS element and resistive element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,786,035 B2 - Document ID: US8786035B2 - Status: Granted - Kind: B2 - Application number: 13/830,639 - Filed: 2013-03-14 - Published: 2014-03-13 - Granted: 2014-07-22 - Earliest claimed: 2012-09-10 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Hiroaki Yamazaki - Web page: https://patentgrep.com/patent/US8786035B2 ## CPC - H10D 1/47: Resistors having no potential barriers - B81B 3/0018: {Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators} - B81B 3/0086: {Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage} - H10D 48/50: Devices controlled by mechanical forces, e.g. pressure - B81B 7/0003: {MEMS mechanisms for assembling automatically hinged components, self-assembly devices (self-assembly processes B81C1/00007)} - B81B 2207/015: the micromechanical device and the control or processing electronics being integrated on the same substrate - B81B 2207/07: Interconnects - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) ## Abstract According to one embodiment, an electronic device includes a drive circuit on a semiconductor substrate, an insulating region including a first insulating part provided on the semiconductor substrate and formed of interlayer insulating films, and a second insulating part provided on the first insulating part, and covering the drive circuit, an element for high-frequency, which is provided on the insulating region, is driven by the drive circuit, an interconnect including a first conductive part in the first insulating part, and a second conductive part in the second insulating part, and transmitting a drive signal from the drive circuit to the element for high-frequency, and a resistive element between the second conductive part and the element for high-frequency. ## Claims ### Claim 1 An electronic device comprising: a semiconductor substrate; a drive circuit provided on the semiconductor substrate; an insulating region including a first insulating part provided on the semiconductor substrate and comprising a plurality of interlayer insulating films, and a second insulating part provided on the first insulating part, the insulating region being configured to cover the drive circuit; an element for high-frequency, which is provided on the insulating region and which is driven by the drive circuit, and to which a high-frequency signal is applied; an interconnection including a first conductive part provided in the first insulating part, and a second conductive part provided in the second insulating part, the interconnection being configured to transmit a drive signal from the drive circuit to the element for high-frequency; and a resistive element provided between the second conductive part and the element for high-frequency, the resistive element being provided on or above the second insulating part and being electrically connected to the second conductive part and the element for high-frequency. ### Claim 2 (depends on 1) The device of claim 1, wherein the resistive element prevents a high-frequency component from leaking from the element for high-frequency into the drive circuit. ### Claim 3 (depends on 1) The device of claim 1, wherein the resistive element comprises silicon. ### Claim 4 (depends on 1) The device of claim 1, wherein the resistive element comprises a carbon nanotube. ### Claim 5 (depends on 1) The device of claim 1, wherein the resistive element comprises a thin-film resistive element. ### Claim 6 (depends on 1) The device of claim 1, wherein the second insulating part comprises an insulating film which is thicker than each of the plurality of interlayer insulating films of the first insulating part. ### Claim 7 (depends on 1) The device of claim 1, wherein the second insulating part comprises one of a silicon dioxide film and a resin film. ### Claim 8 (depends on 1) The device of claim 1, wherein the element for high-frequency comprises a MEMS element. ### Claim 9 (depends on 1) The device of claim 1, wherein the element for high-frequency comprises a variable capacitor element. ### Claim 10 (depends on 1) The device of claim 1, further comprising a capacitor element for a low-pass filter, which is connected to the resistive element. ### Claim 11 (depends on 1) The device of claim 1, wherein the second conductive part is provided in a via hole formed in the second insulating part. ### Claim 12 (depends on 1) The device of claim 1, further comprising a shield provided at a position inside the insulating region and below the element for high-frequency. ### Claim 13 (depends on 1) The device of claim 1, wherein the drive circuit includes a CMOS circuit. ### Claim 14 (depends on 1) The device of claim 1, wherein the resistive element is provided at a position closer to the element for high-frequency than the second conductive part. ### Claim 15 (depends on 1) The device of claim 1, wherein the resistive element is electrically connected to the second conductive part and the element for high-frequency on a same face of the second insulating part. ### Claim 16 An electronic device comprising: a semiconductor substrate; a drive circuit provided on the semiconductor substrate; an insulating region including a first insulating part provided on the semiconductor substrate and comprising a plurality of interlayer insulating films, and a second insulating part provided on the first insulating part, the insulating region being configured to cover the drive circuit; an element for high-frequency, which is provided on the insulating region and which is driven by said drive circuit, and to which a high-frequency signal is applied; an interconnection including a first conductive part provided in the first insulating part, and a second conductive part provided in the second insulating part, the interconnection being configured to transmit a drive signal from the drive circuit to the element for high-frequency; and a resistive element provided between the second conductive part and the element for high-frequency, at a position closer to said element for high-frequency than the second conductive part. ### Claim 17 (depends on 16) The device of claim 16, wherein the resistive element is provided on or above the second insulating part. ### Claim 18 An electronic device comprising: a semiconductor substrate; a drive circuit provided on the semiconductor substrate; an insulating region including a first insulating part provided on the semiconductor substrate and comprising a plurality of interlayer insulating films, and a second insulating part provided on the first insulating part, the insulating region being configured to cover said drive circuit; an element for high-frequency, which is provided on the insulating region and which is driven by said drive circuit, and to which a high-frequency signal is applied; an interconnection including a first conductive part provided in the first insulating part, and a second conductive part provided in the second insulating part, the interconnection being configured to transmit a drive signal from the drive circuit to the element for high-frequency; and a resistive element provided between the second conductive part and the element for high-frequency, the resistive element being electrically connected to the second conductive part and the element for high-frequency. ### Claim 19 (depends on 18) The device of claim 18, wherein the resistive element is provided at a position closer to the element for high-frequency than the second conductive part.