# US 8,786,022 B2 · Semiconductor device and semiconductor device manufacturing method

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- Number: US 8,786,022 B2
- Document ID: US8786022B2
- Status: Granted
- Kind: B2
- Application number: 13/052,776
- Filed: 2011-03-21
- Published: 2011-10-20
- Granted: 2014-07-22
- Earliest claimed: 2010-04-16
- Assignees: Fujitsu Semiconductor Limited
- Applicants: Akira Katakami; Takayuki Aoyama
- Inventors: Akira Katakami; Takayuki Aoyama
- Web page: https://patentgrep.com/patent/US8786022B2

## CPC

- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 64/0134: {with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor}
- H10D 64/685: {being perpendicular to the channel plane}
- H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)}
- H10D 84/0181: {Manufacturing their gate insulating layers}
- H10D 64/667: {the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671)}
- H10D 64/669: {the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes a gate insulation film formed over a semiconductor substrate; a cap film formed over the gate insulation film; a silicon oxide film formed over the cap film; a metal gate electrode formed over the silicon oxide film; and source/drain diffused layers formed in the semiconductor substrate on both sides of the metal gate electrode.

## Claims

### Claim 1

A semiconductor device comprising:
a first gate insulation film that includes an oxide of Hf or an oxide of Zr, formed over a semiconductor substrate;
a first cap film formed over the first gate insulation film, the first cap film including an oxide of a first material;
a first silicon oxide film formed over the first cap film;
a first metal gate electrode formed over the first silicon oxide film;
first source/drain diffused layers formed in the semiconductor substrate on both sides of the first metal gate electrode and having a first conductive type;
a second gate insulation film that includes an oxide of Hf or an oxide of Zr, formed over the semiconductor substrate;
a second cap film formed over the second gate insulation film, the second cap film including the oxide of the first material;
a second metal gate electrode formed directly on the second cap film; and
second source/drain diffused layers formed in the semiconductor substrate on both sides of the second metal gate electrode and having a second conductive type.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
the first material is a rare earth metal or Mg.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein
the rare earth metal is La, Y or Dy.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, further comprising
an aluminum oxide film, a titanium oxide film or a tantalum oxide film formed between the first gate insulation film and the first cap film.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein
the first metal gate electrode and the second metal gate electrode include titanium nitride or tantalum nitride.

### Claim 6

A semiconductor device comprising
a first gate insulation film formed over a semiconductor substrate;
a first cap film formed over the first gate insulation film, the first cap film including an oxide of a first material;
a first silicon oxide film formed over the first cap film;
a first metal gate electrode formed over the first silicon oxide film;
first source/drain diffused layers formed in the semiconductor substrate on both sides of the first metal gate electrode and having a first conductive type;
a second gate insulation film formed over the semiconductor substrate;
a second cap film formed over the second gate insulation film, the second cap film including the oxide of the first material;
a second metal gate electrode formed directly on the second cap film; and
second source/drain diffused layers formed in the semiconductor substrate on both sides of the second metal gate electrode and having a second conductive type,
a second silicon oxide film formed between the semiconductor substrate and the first gate insulation film; and
a third silicon oxide film formed between the semiconductor substrate and the second gate insulation film.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6, wherein
the first gate insulation film and the second gate insulation film include an oxide of Hf or an oxide of Zr.

### Claim 8 (depends on 6)

The semiconductor device according to claim 6, wherein
the first material is a rare earth metal or Mg.

### Claim 9 (depends on 8)

The semiconductor device according to claim 8, wherein
the rare earth metal is La, Y or Dy.

### Claim 10 (depends on 6)

The semiconductor device according to claim 6, further comprising
an aluminum oxide film, a titanium oxide film or a tantalum oxide film formed between the first gate insulation film and the first cap film.

### Claim 11 (depends on 6)

The semiconductor device according to claim 6, wherein
the first metal gate electrode and the second metal gate electrode include titanium nitride or tantalum nitride.