# US 8,786,010 B2 · Superjunction structures for power devices and methods of manufacture

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- Number: US 8,786,010 B2
- Document ID: US8786010B2
- Status: Granted
- Kind: B2
- Application number: 13/095,664
- Filed: 2011-04-27
- Published: 2012-11-01
- Granted: 2014-07-22
- Earliest claimed: 2011-04-27
- Assignees: Fairchild Semiconductor Corporation
- Applicants: Joseph A. Yedinak; Christopher L. Rexer; Jaegil Lee; Hamza Yilmaz; Chongman Yun
- Inventors: Joseph A. Yedinak; Christopher L. Rexer; Jaegil Lee; Hamza Yilmaz; Chongman Yun
- Web page: https://patentgrep.com/patent/US8786010B2

## CPC

- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 8/60: Schottky-barrier diodes
- H10D 30/0297: {using recessing of the gate electrodes, e.g. to form trench gate electrodes}
- H10D 30/665: {having edge termination structures}
- H10D 62/058: {by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/111: {Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures}
- H10D 62/105: {by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] (IGFETs having LDD or drain extension regions H10D30/601)}
- H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D 62/157: {Impurity concentrations or distributions}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 62/405: {Orientations of crystalline planes}
- H10D 64/111: {Field plates}
- H10D 64/112: {comprising multiple field plate segments}
- H10D 64/517: {characterised by the conducting layers}
- H10D 64/519: {characterised by their top-view geometrical layouts}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

## Claims

### Claim 1

A power device comprising:
a semiconductor region;
an active region disposed in the semiconductor region;
a termination region disposed in the semiconductor region and surrounding the active region;
a plurality of pillars of a first conductivity type; and
a plurality of pillars of a second conductivity type disposed in the semiconductor region, the plurality of pillars of the first conductivity type and the plurality of pillars of the second conductivity type being alternatively arranged in the active region and the termination region, a pillar of the plurality of pillars of the second conductivity type including:
a first implant region of the second conductivity type,
a second implant region of the second conductivity type, the second implant region being disposed above, and vertically aligned with the first implant region of the second conductivity type,
a trench; and
a semiconductor material of the second conductivity type disposed in the trench, the trench being disposed above, and vertically aligned with the second implant region of the second conductivity type,
the plurality of pillars of the second conductivity type including a pillar in the active region having a lateral width that is greater than a lateral width of a pillar of the plurality of pillars of the second conductivity type in the termination region.

### Claim 2 (depends on 1)

The power device of claim 1, further comprising:
a first epitaxial layer of the first conductivity type disposed on a substrate;
a second epitaxial layer of the first conductivity type disposed on the first epitaxial layer; and
a third epitaxial layer of the first conductivity type disposed on the second epitaxial layer,
the first implant region of the second conductivity type being disposed in the first epitaxial layer and in the second epitaxial layer, and
the second implant region of the second conductivity type being disposed in the second epitaxial layer and the third epitaxial layer.

### Claim 3 (depends on 2)

The power device of claim 2, wherein the trench extends into and terminates within the third epitaxial layer.

### Claim 4 (depends on 2)

The power device of claim 2 wherein:
the plurality of pillars of the second conductivity type terminate prior to reaching the substrate, and
the first epitaxial layer, the second epitaxial layer and the third epitaxial layer each has a doping concentration that is lower than a doping concentration of the substrate.

### Claim 5 (depends on 1)

The power device of claim 1, wherein each of the first implant region of the second conductivity type, the second implant region of the second conductivity type and the semiconductor material of the second conductivity type has a same doping concentration.

### Claim 6 (depends on 1)

The power device of claim 1, wherein a doping concentration of the first implant region of the second conductivity type is different than a doping concentration of the second implant region of the second conductivity type.

### Claim 7 (depends on 1)

The power device of claim 1, wherein a shape of the first implant region of the second conductivity type is different than a shape of the second implant region of the second conductivity type.

### Claim 8 (depends on 1)

The power device of claim 1, wherein the first implant region of the second conductivity type contacts the second implant region of the second conductivity type.

### Claim 9 (depends on 1)

The power device of claim 1, wherein the second implant region of the second conductivity type is vertically spaced from the first implant region of the second conductivity type.

### Claim 10 (depends on 1)

The power device of claim 1, wherein a pillar of the plurality of pillars of the first conductivity type includes:
a first implant region of the first conductivity type; and
a second implant region of the first conductivity type disposed above, and vertically aligned with the first implant region of the first conductivity type.

### Claim 11 (depends on 10)

The power device of claim 10, wherein a shape of the first implant region of the first conductivity type is different than a shape of the second implant region of the first conductivity type.

### Claim 12 (depends on 1)

The power device of claim 1 further, comprising:
a body region of the second conductivity type extending into the semiconductor region and defining a portion of at least one pillar of the pillars of the second conductivity type;
a source region of the first conductivity type extending into the body region; and
a gate electrode extending adjacent to, but being insulated from the body region, the gate electrode being disposed adjacent to the source region.

### Claim 13

A power device comprising:
an active region;
a termination region surrounding the active region;
a plurality of pillars of a first conductivity type; and
a plurality of pillars of a second conductivity type, the plurality of pillars of the first conductivity type and the plurality of pillars of the second conductivity type being alternately arranged in the active region and the termination region, a pillar of the plurality of pillars of the second conductivity type including:
a first implant region of the second conductivity type;
a second implant region of the second conductivity type disposed above, and vertically aligned with the first implant region of the second conductivity type,
a trench; and
a semiconductor material of the second conductivity type disposed in the trench, the trench being disposed above, and vertically aligned with the second implant region of the second conductivity type,
the plurality of pillars of the second conductivity type including a pillar in the active region having a number of implant regions of the second conductivity type that is less than a number of implant regions of the second conductivity type of a pillar of the plurality of pillars of the second conductivity type in the termination region.

### Claim 14 (depends on 13)

The power device of claim 13, further comprising:
a first epitaxial layer of the first conductivity type disposed on a substrate;
a second epitaxial layer of the first conductivity type disposed on the first epitaxial layer; and
a third epitaxial layer of the first conductivity type disposed on the second epitaxial layer,
the first implant region of the second conductivity type being disposed in the first epitaxial layer and the second epitaxial layer, and
the second implant region of the second conductivity type being disposed in the second epitaxial layer and the third epitaxial layer.

### Claim 15 (depends on 14)

The power device of claim 14, wherein the trench extends into and terminates within the third epitaxial layer.

### Claim 16 (depends on 13)

The power device of claim 13, wherein the first implant region of the second conductivity type has a shape that is different than a shape of the second implant region of the second conductivity type.

### Claim 17 (depends on 13)

The power device of claim 13, wherein the first implant region of the second conductivity type has a lateral width that is different than a lateral width of the second implant region of the second conductivity type.

### Claim 18 (depends on 13)

The power device of claim 13, wherein a pillar of the plurality of pillars of the first conductivity type includes:
a first implant region of the first conductivity type; and
a second implant region of the first conductivity type disposed above, and vertically aligned with the first implant region of the first conductivity type.

### Claim 19 (depends on 18)

The power device of claim 18, wherein a pillar of the plurality of pillars of the first conductivity type in the active region has a shape that is different than a shape of a pillar of the plurality of pillars of the first conductivity type in the termination region.

### Claim 20 (depends on 18)

The power device of claim 18, wherein a pillar of the plurality of pillars of the first conductivity type in the active region has a number of implant regions of the first conductivity type that is less than a number of implant regions of the first conductivity type of a pillar of the plurality of pillars of the first conductivity type in the termination region.

### Claim 21

A method for forming a power device including pillars of alternating conductivity type, the method comprising:
forming a semiconductor region on a substrate, the semiconductor region including a plurality of epitaxial layers of a first conductivity type;
defining an active region of the power device in the semiconductor region;
defining a termination region of the power device in the semiconductor region, the termination region surrounding the active region;
forming a plurality of pillars of a second conductivity type in the active region and the termination region, the forming a pillar of the plurality of pillars of the second conductivity type including:
forming a plurality of implant regions of the second conductivity type, each of the plurality of implant regions of the second conductivity type being disposed in at least one epitaxial layer of the plurality of epitaxial layers of the first conductivity type;
forming a trench extending into an upper-most epitaxial layer of the plurality of epitaxial layers; and
forming a semiconductor material of the second conductivity type in the trench,
the plurality of implant regions of the second conductivity type and the trench being vertically aligned such that the semiconductor material of the second conductivity type and the plurality of implant regions of the second conductivity type define a pillar of the second conductivity type, the plurality of pillars of the second conductivity type in the active region including a pillar having a number of implant regions of the second conductivity type that is less than a number of implant regions of the second conductivity type of a pillar of the plurality of pillars of the second conductivity type in the termination region,
the forming the plurality of pillars of the second conductivity type defining a plurality of pillars of the first conductivity type in the active region and the termination region, the plurality of pillars of the first conductivity including portions of the plurality of epitaxial layers disposed between the plurality of pillars of the second conductivity type.

### Claim 22 (depends on 21)

The method of claim 21, wherein each of the plurality of implant regions of the second conductivity type is disposed in at least two epitaxial layers of the plurality of epitaxial layers.

### Claim 23 (depends on 21)

The method of claim 21, wherein a pillar of the plurality of pillars of the second conductivity type in the active region has a shape that is different than a shape of a pillar of the plurality of pillars of the second conductivity type in the termination region.

### Claim 24 (depends on 21)

The method of claim 21, wherein a pillar of the plurality of pillars of the second conductivity type in the active region has a lateral width that is greater than a lateral width of a pillar of the plurality of pillars of the second conductivity type in the termination region.

### Claim 25 (depends on 21)

The method of claim 21, wherein a pillar of the plurality of pillars of the first conductivity type includes:
a first implant region of the first conductivity type; and
a second implant region of the first conductivity type disposed above, and vertically aligned with the first implant region of the first conductivity type.

### Claim 26 (depends on 25)

The method of claim 25, wherein a pillar of the plurality of pillars of the first conductivity type in the active region has a shape that is different than a shape of a pillar of the plurality of pillars of the first conductivity type in the termination region.

### Claim 27 (depends on 25)

The method of claim 25, wherein a pillar of the plurality of pillars of the first conductivity type in the active region has a number of implant regions of the first conductivity type that is less than a number of implant regions of the first conductivity type than a pillar of the plurality of pillars of the first conductivity type in the termination region.

### Claim 28 (depends on 21)

The method of claim 21, wherein the semiconductor region includes at least one epitaxial layer of the second conductivity type.

### Claim 29

A method for forming a power device including pillars of alternating conductivity type, the method comprising:
forming a semiconductor region on a substrate, the semiconductor region including a plurality of epitaxial layers of a first conductivity type;
defining an active region of the power device in the semiconductor region;
defining a termination region of the power device in the semiconductor region, the termination region surrounding the active region;
forming a plurality of pillars of a second conductivity type in the active region and the termination region, the forming a pillar of the plurality of pillars of the second conductivity type including:
forming a plurality of implant regions of the second conductivity type, each of the plurality of implant regions of the second conductivity type being disposed in at least one epitaxial layer of the plurality of epitaxial layers of the first conductivity type;
forming a trench extending into an upper-most epitaxial layer of the plurality of epitaxial layers; and
forming a semiconductor material of the second conductivity type in the trench,
the plurality of implant regions of the second conductivity type and the trench being vertically aligned such that the semiconductor material of the second conductivity type and the plurality of implant regions of the second conductivity type define a pillar of the second conductivity type, the plurality of pillars of the second conductivity type in the active region including a pillar having a lateral width that is greater than a lateral width of a pillar of the plurality of pillars of the second conductivity type in the termination region,
the forming the plurality of pillars of the second conductivity type defining a plurality of pillars of the first conductivity type in the active region and the termination region, the plurality of pillars of the first conductivity including portions of the plurality of epitaxial layers disposed between the plurality of pillars of the second conductivity type.

### Claim 30 (depends on 29)

The method of claim 29, wherein each of the plurality of implant regions of the second conductivity type is disposed in at least two epitaxial layers of the plurality of epitaxial layers.

### Claim 31 (depends on 29)

The method of claim 29, wherein a pillar of the plurality of pillars of the second conductivity type in the active region has a shape that is different than a shape of a pillar of the plurality of pillars of the second conductivity type in the termination region.

### Claim 32 (depends on 29)

The method of claim 29, wherein a pillar of the plurality of pillars of the second conductivity type in the active region has a number of implant regions of the second conductivity type that is less than a number of implant regions of the second conductivity type of a pillar of the plurality of pillars of the second conductivity type in the termination region.

### Claim 33 (depends on 29)

The method of claim 29, wherein a pillar of the plurality of pillars of the first conductivity type includes:
a first implant region of the first conductivity type; and
a second implant region of the first conductivity type disposed above, and vertically aligned with the first implant region of the first conductivity type.

### Claim 34 (depends on 29)

The method of claim 29, wherein a pillar of the plurality of pillars of the first conductivity type in the active region has a shape that is different than a shape of a pillar of the plurality of pillars of the first conductivity type in the termination region.

### Claim 35 (depends on 29)

The method of claim 29, wherein a pillar of the plurality of pillars of the first conductivity type in the active region has a number of implant regions of the first conductivity type that is less than a number of implant regions of the first conductivity type than a pillar of the plurality of pillars of the first conductivity type in the termination region.