# US 8,785,994 B2 · X-ray detector > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,994 B2 - Document ID: US8785994B2 - Status: Granted - Kind: B2 - Application number: 13/680,661 - Filed: 2012-11-19 - Published: 2014-01-30 - Granted: 2014-07-22 - Earliest claimed: 2012-07-27 - Assignees: Samsung Display Co., Ltd. - Applicants: Samsung Display Co., Ltd. - Inventors: Dong-Hyuk Kim - Web page: https://patentgrep.com/patent/US8785994B2 ## CPC - H10F 30/295: Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors - G01T 1/20183: {Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk} - H10F 39/026: {Wafer-level processing} - H10F 39/1898: {Indirect radiation image sensors, e.g. using luminescent members} - H10F 39/8057: {Optical shielding} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00) ## Abstract An X-ray detector including: a substrate that is divided into a light detection area and a non-detection area and includes a plurality of pixels; a photodiode disposed on the light detection area; a thin film transistor that is disposed on the non-detection area and is electrically connected to a lower portion of the photodiode; a plurality of wires that are electrically connected to the thin film transistor and are positioned on the non-detection area; at least one insulating layer disposed so as to cover at least the thin film transistor and the plurality of wires; a scintillator layer disposed on the at least one insulating layer over an entire surface of the substrate; and a shielding part disposed between the at least one insulating layer and the scintillator layer to shield the non-detection area. ## Claims ### Claim 1 An X-ray detector comprising: a substrate divided into a light detection area and a non-detection area and comprising a plurality of pixels; a photodiode on the light detection area; a thin film transistor on the non-detection area and electrically connected to a lower portion of the photodiode; a plurality of wires electrically connected to the thin film transistor and positioned on the non-detection area; at least one insulating layer disposed so as to cover at least the thin film transistor and the plurality of wires; a scintillator layer disposed on the at least one insulating layer over an entire surface of the substrate; and a shielding part disposed between the at least one insulating layer and the scintillator layer to shield the non-detection area. ### Claim 2 (depends on 1) The X-ray detector of claim 1, further comprising an adhesive layer between the shielding part and the scintillator layer. ### Claim 3 (depends on 2) The X-ray detector of claim 2, further comprising a passivation layer between the adhesive layer and the scintillator layer. ### Claim 4 (depends on 1) The X-ray detector of claim 1, further comprising a scintillator seed layer between the shielding part and the scintillator layer. ### Claim 5 (depends on 1) The X-ray detector of claim 1, wherein the shielding part comprises at least one of an acryl-based organic material, an overcoat material, and a black matrix (BM). ### Claim 6 (depends on 1) The X-ray detector of claim 1, further comprising a device passivation layer that covers at least the thin film transistor and the photodiode and is disposed below the insulating layer; and a bias line that is disposed on the device passivation layer and is electrically connected to an upper portion of the photodiode through a contact hole. ### Claim 7 (depends on 6) The X-ray detector of claim 6, wherein the bias line is branched to be overlapped with the thin film transistor. ### Claim 8 (depends on 6) The X-ray detector of claim 6, further comprising an additional shielding part disposed between the device passivation layer and the insulating layer to shield the non-detection area. ### Claim 9 (depends on 1) The X-ray detector of claim 1, wherein the scintillator layer comprises at least one of CsI and GdOS. ### Claim 10 An X-ray detector comprising: a substrate divided into a light detection area and a non-detection area and comprising a plurality of pixels; a photosensitive element on the light detection area; a circuit unit on the non-detection area and electrically connected to a lower portion of the photosensitive element; a plurality of wires on the non-detection area and electrically connected to the circuit unit; a device passivation layer covering at least the circuit unit and the plurality of wires; an insulating layer covering the device passivation layer; a light wavelength conversion layer on the insulating layer over an entire surface of the substrate; and a shielding part disposed between the insulating layer and the light wavelength conversion layer to shield the non-detection area. ### Claim 11 (depends on 10) The X-ray detector of claim 10, further comprising an adhesive layer between the shielding part and the light wavelength conversion layer. ### Claim 12 (depends on 11) The X-ray detector of claim 11, further comprising a passivation layer between the adhesive layer and the light wavelength conversion layer. ### Claim 13 (depends on 10) The X-ray detector of claim 10, further comprising a seed layer between the shielding part and the light wavelength conversion layer. ### Claim 14 (depends on 10) The X-ray detector of claim 10, wherein the shielding part comprises at least one of an acryl-based organic material, an overcoat material, and a black matrix (BM). ### Claim 15 (depends on 10) The X-ray detector of claim 10, further comprising an additional shielding part disposed between the device passivation layer and the insulating layer to shield the non-detection area. ### Claim 16 (depends on 10) The X-ray detector of claim 10, wherein the light wavelength conversion layer comprises at least one of CsI and GdOS. ### Claim 17 An X-ray detector comprising: a substrate divided into a light detection area and a non-detection area and comprising a plurality of pixels; a photodiode on the light detection area; a thin film transistor on the non-detection area and electrically connected to a lower portion of the photodiode; a plurality of wires electrically connected to the thin film transistor and positioned on the non-detection area; at least one insulating layer disposed so as to cover at least the thin film transistor and the plurality of wires; a device passivation layer that covers at least the thin film transistor and the photodiode and is disposed below the insulating layer; a scintillator layer disposed on the at least one insulating layer over an entire surface of the substrate; and a shielding part disposed between the device passivation layer and the at least one insulating layer to shield the non-detection area.