# US 8,785,993 B2 · Solid-state imaging element, manufacturing method, and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,993 B2 - Document ID: US8785993B2 - Status: Granted - Kind: B2 - Application number: 13/564,030 - Filed: 2012-08-01 - Published: 2013-02-14 - Granted: 2014-07-22 - Earliest claimed: 2011-08-12 - Assignees: Sony Corporation - Applicants: Takashi Abe - Inventors: Takashi Abe - Web page: https://patentgrep.com/patent/US8785993B2 ## CPC - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8033: {Photosensitive area} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/807: {Pixel isolation structures} - H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A solid-state imaging element includes a pixel having a photoelectric conversion section and a side pinning layer. The photoelectric conversion section is formed in a semiconductor substrate. The side pinning layer is formed on a side of the photoelectric conversion section. The side pinning layer is formed by performing ion implantation in a state of a trench being open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed. ## Claims ### Claim 1 A solid-state imaging element comprising: a pixel including a photoelectric conversion section formed in a semiconductor substrate of a first conductivity type having a first impurity concentration; a side pinning layer formed on a side of the photoelectric conversion section, wherein the side pinning layer is formed of the first conductivity type having a higher impurity concentration than the first impurity concentration; and an anode of the photoelectric conversion section comprising a pixel separating section surrounding sides of the photoelectric conversion section, wherein the pixel separating section comprises at least two sides in contact with the semiconductor substrate of the first conductivity type having the first impurity concentration, and wherein a negative potential is supplied to the anode of the photoelectric conversion section. ### Claim 2 (depends on 1) The solid-state imaging element according to claim 1, wherein the side pinning layer is formed in a region surrounding the side of the photoelectric conversion section. ### Claim 3 (depends on 1) The solid-state imaging element according to claim 1, wherein the side pinning layer is formed by performing ion implantation from an inclined direction with respect to a surface of the semiconductor substrate. ### Claim 4 (depends on 1) The solid-state imaging element according to claim 1, further comprising a surface pinning layer formed on a surface side of the photoelectric conversion section, wherein the side pinning layer and the surface pinning layer are formed simultaneously by performing ion implantation from an inclined direction with respect to the surface of the semiconductor substrate. ### Claim 5 (depends on 1) The solid-state imaging element according to claim 1, wherein a pixel separating section separating from an adjacent pixel is buried in a trench after the side pinning layer is formed. ### Claim 6 (depends on 1) The solid-state imaging element according to claim 1, wherein the side pinning layer is formed by performing ion implantation in a state of a trench being open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed. ### Claim 7 A method for manufacturing a solid-state imaging element including a pixel comprising: forming a trench in a semiconductor substrate of a first conductivity type having a first impurity concentration; forming a photoelectric conversion section in the semiconductor substrate; forming a side pinning layer on a side of the photoelectric conversion section, wherein the side pinning layer is formed of the first conductivity type having a higher impurity concentration than the first impurity concentration; forming a surface pinning layer on a surface side of the photoelectric conversion section; forming an anode of the photoelectric conversion section, wherein the anode comprises a pixel separating section formed in the trench and surrounding sides of the photoelectric conversion section the pixel separating section comprising at least two sides in contact with the semiconductor substrate of the first conductivity type having the first impurity concentration; and connecting an anode of the photoelectric conversion section to a signal wiring such that a negative potential is supplied to the photoelectric conversion section. ### Claim 8 (depends on 7) The method for manufacturing a solid-state imaging element according to claim 7, further comprising forming the side pinning layer in a region surrounding the side of the photoelectric conversion section. ### Claim 9 (depends on 7) The method for manufacturing a solid-state imaging element according to claim 7, further comprising forming the side pinning layer by performing ion implantation from an inclined direction with respect to a surface of the semiconductor substrate. ### Claim 10 (depends on 7) The method for manufacturing a solid-state imaging element according to claim 7, wherein the side pinning layer and the surface pinning layer are formed simultaneously by performing ion implantation from an inclined direction with respect to the surface of the semiconductor substrate. ### Claim 11 (depends on 7) The method for manufacturing a solid-state imaging element according to claim 7, further comprising burying the pixel separating section in the trench after forming the side pinning layer. ### Claim 12 (depends on 7) The method for manufacturing a solid-state imaging element according to claim 7, further comprising forming the side pinning layer by performing ion implantation when a trench is open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed and including the pixel separating section. ### Claim 13 An electronic device comprising: a solid-state imaging element including a pixel having a photoelectric conversion section formed in a semiconductor substrate of a first conductivity type having a first impurity concentration; a side pinning layer formed on a side of the photoelectric conversion section, wherein the side pinning layer is formed of the first conductivity type having a higher impurity concentration than the first impurity concentration; and an anode of the photoelectric conversion section comprising a pixel separating section surrounding sides of the photoelectric conversion section, wherein the pixel separating section comprises at least two sides in contact with the semiconductor substrate of the first conductivity type having the first impurity concentration, and wherein a negative potential is supplied to the anode of the photoelectric conversion section. ### Claim 14 (depends on 13) The electronic device according to claim 13, wherein the side pinning layer is formed in a region surrounding the side of the photoelectric conversion section. ### Claim 15 (depends on 13) The electronic device according to claim 13, wherein the side pinning layer is formed by performing ion implantation from an inclined direction with respect to a surface of the semiconductor substrate. ### Claim 16 (depends on 13) The electronic device according to claim 13, further comprising a surface pinning layer formed on a surface side of the photoelectric conversion section, wherein the side pinning layer and the surface pinning layer are formed simultaneously by performing ion implantation from an inclined direction with respect to the surface of the semiconductor substrate. ### Claim 17 (depends on 13) The electronic device according to claim 13, wherein the side pinning layer is formed by performing ion implantation when the trench is open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed. ### Claim 18 (depends on 13) The electronic device according to claim 13, wherein the pixel separating section separating the pixel from an adjacent pixel is buried in a trench after the side pinning layer is formed. ### Claim 19 (depends on 18) The electronic device according to claim 18, wherein a negative potential is supplied to the pixel separating section in timing of transfer of a charge accumulated in the photoelectric conversion section.