# US 8,785,991 B2 · Solid state imaging device, method for producing the same, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,991 B2 - Document ID: US8785991B2 - Status: Granted - Kind: B2 - Application number: 12/453,954 - Filed: 2009-05-28 - Published: 2010-01-07 - Granted: 2014-07-22 - Earliest claimed: 2008-07-02 - Assignees: Sony Corporation - Applicants: Keiji Mabuchi - Inventors: Keiji Mabuchi - Web page: https://patentgrep.com/patent/US8785991B2 ## CPC - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/014: {of CMOS image sensors} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A solid state imaging device includes a photoelectric conversion portion in which the shape of potential is provided such that charge is mainly accumulated in a vertical direction. ## Claims ### Claim 1 A solid state imaging device comprising: a p-type well region in direct physical contact with a p+-type semiconductor region and an n+-type floating diffusion portion, a portion of the p-type well region being between said p+-type semiconductor region and said n+-type floating diffusion portion; a p+-type first vertically elongated region in direct physical contact with said p+-type semiconductor region and an n-type vertically elongated region, said n-type vertically elongated region being in direct physical contact with said p-type well region and said p+-type first vertically elongated region; an insulation film in direct physical contact with said p+-type first vertically elongated region and said p+-type semiconductor region, said p-type well region and said n+-type floating diffusion portion being in direct physical contact with said insulation film; a p+-type bottom surface region in direct physical contact with said n-type vertically elongated region and said p+-type first vertically elongated region, said p+-type bottom surface region being configured to transfer incident light to said n-type vertically elongated region, wherein an impurity concentration of an n-type conductivity in the n-type vertically elongated region is substantially the same throughout the entirety of said n-type vertically elongated region, wherein an impurity concentration of a p-type conductivity in the p+-type first vertically elongated region is higher than an impurity concentration of the p-type conductivity in the p-type well region, wherein more of a signal charge is accumulable in a pn junction between said n-type vertically elongated region and said p+-type first vertically elongated region than in a pn junction between said n-type vertically elongated region and said p+-type semiconductor region, and the shape of potential is provided such that charges are mainly accumulated in a vertical direction. ### Claim 2 (depends on 1) The solid state imaging device according to claim 1, wherein said impurity concentration of the p-type conductivity in the p+-type first vertically elongated region is substantially the same throughout the entirety of said p+-type first vertically elongated region. ### Claim 3 (depends on 1) The solid state imaging device according to claim 1, wherein said impurity concentration of the p-type conductivity in the p-type well region is lower than an impurity concentration of the p-type conductivity in the p+-type bottom surface region. ### Claim 4 (depends on 1) The solid state imaging device according to claim 1, wherein an impurity concentration of the p-type conductivity in the p+-type semiconductor region is higher than said impurity concentration of the p-type conductivity in the p-type well region. ### Claim 5 (depends on 1) The solid state imaging device according to claim 1, wherein said insulation film and said p+-type bottom surface region are at opposite surfaces of a semiconductor substrate. ### Claim 6 (depends on 1) The solid state imaging device according to claim 1, wherein said n-type vertically elongated region is in direct physical contact with said p+-type semiconductor region. ### Claim 7 (depends on 1) The solid state imaging device according to claim 1, wherein said n-type vertically elongated region is between said p+-type first vertically elongated region and said p-type well region. ### Claim 8 (depends on 1) The solid state imaging device according to claim 1, wherein said p+-type first vertically elongated region is between said p+-type bottom surface region and said insulation film. ### Claim 9 (depends on 1) The solid state imaging device according to claim 1, wherein said p-type well region is between said p+-type bottom surface region and said insulation film. ### Claim 10 (depends on 1) The solid state imaging device according to claim 1, wherein said n-type vertically elongated region is between said p+-type bottom surface region and said p+-type semiconductor region. ### Claim 11 (depends on 1) The solid state imaging device according to claim 1, wherein said p+-type semiconductor region is between said n-type vertically elongated region and said insulation film. ### Claim 12 (depends on 1) The solid state imaging device according to claim 1, wherein said p-type well region is in direct physical contact with said p+-type bottom surface region. ### Claim 13 (depends on 1) The solid state imaging device according to claim 1, wherein a portion of the insulation film is between a transfer gate electrode and said portion of the p-type well region. ### Claim 14 (depends on 1) The solid state imaging device according to claim 1, wherein said n-type vertically elongated region is configured to accumulate said signal charge. ### Claim 15 (depends on 1) The solid state imaging device according to claim 1, wherein a photodiode comprises said p+-type first vertically elongated region, said n-type vertically elongated region and said p+-type semiconductor region. ### Claim 16 (depends on 15) The solid state imaging device according to claim 15, wherein said photodiode is configured to convert said incident light into said signal charge.