# US 8,785,981 B1 · Non-replacement gate nanomesh field effect transistor with pad regions

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- Number: US 8,785,981 B1
- Document ID: US8785981B1
- Status: Granted
- Kind: B1
- Application number: 14/022,469
- Filed: 2013-09-10
- Granted: 2014-07-22
- Earliest claimed: 2013-03-12
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Josephine B. Chang; Paul Chang; Isaac Lauer; Jeffrey W. Sleight
- Web page: https://patentgrep.com/patent/US8785981B1

## CPC

- H10D 30/43: having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 30/014: {of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors}
- H10D 30/019: {of FETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D 30/501: {FETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D 62/121: {oriented parallel to substrates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A gate-first processing scheme for forming a nanomesh field effect transistor is provided. An alternating stack of two different semiconductor materials is patterned to include two pad regions and nanowire regions. A semiconductor material is laterally etched selective to another semiconductor material to form a nanomesh including suspended semiconductor nanowires. A stack of a gate dielectric, a gate electrode, and a gate cap dielectric is formed over the nanomesh. A dielectric spacer is formed around the gate electrode. An isotropic etch is employed to remove dielectric materials that are formed in lateral recesses of the patterned alternating stack. A selective epitaxy process can be employed to form a source region and a drain region.

## Claims

### Claim 1

A semiconductor structure comprising:
a vertical stack of at least two first patterned semiconductor layers comprising a first semiconductor material and at least one second patterned semiconductor layer comprising a second semiconductor material, wherein each of said at least two first patterned semiconductor layers comprises at least one semiconductor nanowire and a pair of first pad regions adjoining said at least one semiconductor nanowire, and wherein each of said at least one second patterned semiconductor layer comprises a pair of second pad regions that are laterally spaced from each other;
a gate electrode structure straddling said at least one semiconductor nanowire;
a gate spacer laterally surrounding said gate electrode structure; and
both a raised source region and a raised drain region comprising a semiconductor material and contacting surfaces of said at least one semiconductor nanowire and each of said first and second pad regions.

### Claim 2 (depends on 1)

The semiconductor structure of claim 1, wherein each of said at least one semiconductor nanowire has a cylindrical shape with a cross-sectional shape bounded by convex surfaces.

### Claim 3 (depends on 1)

The semiconductor structure of claim 1, wherein each second pad region among pair of second pad regions contacts an overlying or underlying first pad region, and does not contact any semiconductor nanowire.

### Claim 4 (depends on 3)

The semiconductor structure of claim 3, wherein each second pad region among said pair of second pad regions has sidewalls that are laterally recessed from sidewalls of said overlying or underlying first pad region.

### Claim 5 (depends on 1)

The semiconductor structure of claim 1, wherein each sidewall of said pair of second pad regions and each sidewall of said at least two pairs of first pad regions are in contact with one of said raised source region and said raised drain region.

### Claim 6 (depends on 1)

The semiconductor structure of claim 1, wherein said gate electrode comprises a stack of a metallic gate electrode and a semiconductor gate electrode, wherein said metallic gate electrode has a lesser width than said semiconductor gate electrode.

### Claim 7 (depends on 6)

The semiconductor structure of claim 6, further comprising a plurality of gate dielectrics laterally surrounding said at least one semiconductor nanowire, wherein said metallic gate electrode is in contact with said gate dielectrics, and said semiconductor gate electrode is not in contact with said gate dielectrics.

### Claim 8 (depends on 6)

The semiconductor structure of claim 6, wherein a surface of said gate spacer is in physical contact with a bottom surface of said semiconductor gate electrode.

### Claim 9 (depends on 1)

The semiconductor structure of claim 1, wherein said gate electrode laterally surrounds each of said at least one semiconductor nanowire that is not in physical contact with said substrate.

### Claim 10 (depends on 1)

The semiconductor structure of claim 1, wherein each of said at least one semiconductor nanowire is single crystalline, and is in epitaxial alignment with a portion of said raised source region and a portion of said raised drain region.