# US 8,785,967 B2 · Local crystallization by heat treatment > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,967 B2 - Document ID: US8785967B2 - Status: Granted - Kind: B2 - Application number: 12/575,347 - Filed: 2009-10-07 - Published: 2010-04-08 - Granted: 2014-07-22 - Earliest claimed: 2008-10-08 - Assignees: Samsung Display Co., Ltd. - Applicants: Tae-Hyung Hwang; Hyun-Jae Kim; Doh-Kyung Kim; Tae-Hun Jung; Woong-Hee Jeong; Choong-Hee Lee - Inventors: Tae-Hyung Hwang; Hyun-Jae Kim; Doh-Kyung Kim; Tae-Hun Jung; Woong-Hee Jeong; Choong-Hee Lee - Web page: https://patentgrep.com/patent/US8785967B2 ## CPC - C30B 29/06: Silicon - C30B 1/023: {from solids with amorphous structure} - B32B 2457/202: LCD, i.e. liquid crystal displays - H10D 86/0229: {characterised by control of the annealing or irradiation parameters} - H10D 86/40: characterised by multiple TFTs - H10D 86/411: {characterised by materials, geometry or structure of the substrates} - H10D 86/60: wherein the TFTs are in active matrices - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth} - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate. ## Claims ### Claim 1 An apparatus comprising: a crystallization apparatus for crystallizing a semiconductor layer, the crystallization apparatus having: a roller; at least one heat emission part that is provided at an outer surface of the roller and is configured to receive external electric power so as to emit heat, each heat emission part being sized to correspond to the semiconductor layer of a thin film transistor; an electrical network arranged in a cylindrical configuration, the electrical network including a first power line and a second power line connected to a separate power source from the first power line to provide the external electric power to the heat emission part. ### Claim 2 An apparatus comprising: a crystallization apparatus for crystallizing a semiconductor layer, the crystallization apparatus having: at least one heat emission part configured to emit heat; an electrical network arranged in a cylindrical configuration, the electrical network including a first power line and a second power line connected to a separate power source from the first power line; a support part that supports the heat emission part; and a roller that receives the heat emission part and comprises at least one opening that is aligned with the heat emission part and that is sized to correspond to the semiconductor layer of a thin film transistor, wherein the heat emission part is connected between the first power line and the second power line to receive power from the first power line and the second power line. ### Claim 3 (depends on 2) The crystallization apparatus of claim 2, wherein the first power line and the second power line are disposed on an outer surface of the support part. ### Claim 4 (depends on 3) The crystallization apparatus of claim 3, wherein the heat emission part comprises a protruding tip comprising two ends that are connected to the first power line and the second power line, respectively. ### Claim 5 (depends on 4) The crystallization apparatus of claim 4, wherein the protruding tip is aligned with the opening to emit heat through the opening. ### Claim 6 (depends on 4) The crystallization apparatus of claim 4, wherein the heat emission part comprises one of tungsten, nickel-chrome, and platinum. ### Claim 7 (depends on 2) The crystallization apparatus of claim 2, wherein the heat emission part comprises a lamp and the lamp is configured to receive electric power from the first power line and the second power line so as to emit a pulsed laser beam. ### Claim 8 (depends on 7) The crystallization apparatus of claim 7, wherein the heat emission part protrudes from the outer surface of the roller and is shaped into a circle, an ellipse or a polygon. ### Claim 9 (depends on 8) The crystallization apparatus of claim 8, wherein the heat emission part comprises one of tungsten, nickel-chrome, and platinum.