# US 8,785,963 B2 · Method of manufacturing semiconductor light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,963 B2 - Document ID: US8785963B2 - Status: Granted - Kind: B2 - Application number: 13/546,826 - Filed: 2012-07-11 - Published: 2012-11-01 - Granted: 2014-07-22 - Earliest claimed: 2009-02-17 - Assignees: LG Innotek Co., Ltd. - Applicants: Joo Yong Jung - Inventors: Joo Yong Jung - Web page: https://patentgrep.com/patent/US8785963B2 ## CPC - H10H 20/018: {Bonding of wafers} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Disclosed is a light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; an electrode layer on the light emitting structure; and a conductive support member on the electrode; wherein the conductive support member includes a center portion and a circumference portion surrounding the center portion, wherein a thickness of the circumference portion is lower than a thickness of the center portion, and wherein an area of a top surface of the electrode layer is larger than an area of a top surface of the second conductive semiconductor layer. ## Claims ### Claim 1 A light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; an electrode layer on the light emitting structure; a conductive support member on the electrode layer; and a channel layer between the light emitting structure and the electrode layer, wherein the conductive support member includes a center portion and a circumference portion surrounding the center portion, wherein a thickness of the circumference portion is less than a thickness of the center portion, wherein an area of a top surface of the electrode layer is greater than an area of a top surface of the second conductive semiconductor layer, wherein a width of the electrode layer is greater than a width of the second conductive semiconductor layer, wherein the channel layer is exposed from a side of the light emitting structure, and wherein a portion of the electrode layer is disposed between the channel layer and the conductive support member. ### Claim 2 (depends on 1) The light emitting device according to claim 1, further comprising a first electrode under the first conductive semiconductor layer. ### Claim 3 (depends on 1) The light emitting device according to claim 1, wherein the conductive support member includes a material selected from the group consisting of Cu, Au, Ni, and Mo. ### Claim 4 (depends on 1) The light emitting device according to claim 1, wherein the electrode layer includes seed metal. ### Claim 5 (depends on 1) The light emitting device according to claim 1, wherein the electrode layer includes ohmic metal. ### Claim 6 (depends on 1) The light emitting device according to claim 1, wherein the electrode layer includes reflective metal. ### Claim 7 (depends on 1) The light emitting device according to claim 1, wherein the electrode layer includes at least one selected from the group consisting of Al, Ag, Pd, Rh, and Pt, or alloy thereof. ### Claim 8 A light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; an electrode layer on the light emitting structure; a conductive support member on the electrode layer; and a channel layer on an outer peripheral portion of the second conductive semiconductor layer of the light emitting structure, wherein the conductive support member includes a first portion and a second portion, wherein the first portion is protruded downwardly from the second portion, wherein an area of a top surface of the electrode layer is greater than an area of a top surface of the second conductive semiconductor layer, wherein a width of the electrode layer is greater than a width of the second conductive semiconductor layer, wherein the channel layer is exposed from a side of the light emitting structure, and wherein a portion of the electrode layer is disposed between the channel layer and the conductive support member. ### Claim 9 (depends on 8) The light emitting device according to claim 8, wherein the channel layer is disposed between the second conductive semiconductor layer and the second portion of the conductive support member. ### Claim 10 (depends on 8) The light emitting device according to claim 8, further comprising a first electrode under the first conductive semiconductor layer. ### Claim 11 (depends on 8) The light emitting device according to claim 8, wherein the conductive support member includes a material selected from the group consisting of Cu, Au, Ni, and Mo. ### Claim 12 (depends on 8) The light emitting device according to claim 8, wherein the electrode layer includes seed metal. ### Claim 13 (depends on 8) The light emitting device according to claim 8, wherein the electrode layer includes ohmic metal. ### Claim 14 (depends on 8) The light emitting device according to claim 8, wherein the electrode layer includes reflective metal. ### Claim 15 (depends on 8) The light emitting device according to claim 8, wherein the electrode layer includes at least one selected from the group consisting of Al, Ag, Pd, Rh, and Pt, or alloy thereof. ### Claim 16 (depends on 8) The light emitting device according to claim 8, wherein the channel layer includes at least one selected from the group consisting of SiO2, SiOx, SiOxNy, Si3N4, Al2O3, TiO2, ITO, IZO, AZO, IZTO, IAZO, IGZO, IGTO, and ATO. ### Claim 17 (depends on 8) The light emitting device according to claim 8, wherein the channel layer includes a light transmittive conductive material. ### Claim 18 (depends on 8) The light emitting device according to claim 8, wherein the channel layer includes a light transmittive insulating material. ### Claim 19 A light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; an electrode layer on the light emitting structure; a conductive support member on the electrode layer; and a channel layer on an outer peripheral portion of the second conductive semiconductor layer of the light emitting structure, wherein the channel layer includes at least one selected from the group consisting of ITO, IZO, AZO, IZTO, IAZO, IGZO, IGTO, and ATO, wherein a width of the electrode layer is greater than a width of the second conductive semiconductor layer, wherein the channel layer is exposed from a side of the light emitting structure, and wherein a portion of the electrode layer is disposed between the channel layer and the conductive support member. ### Claim 20 (depends on 19) The light emitting device according to claim 19, wherein the conductive support member includes a center portion and a circumference portion surrounding the center portion, wherein a thickness of the circumference portion is less than a thickness of the center portion, and wherein an area of a top surface of the electrode layer is greater than an area of a top surface of the second conductive semiconductor layer.