# US 8,785,960 B1 · Light-emitting dies incorporating wavelength-conversion materials and related methods

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- Number: US 8,785,960 B1
- Document ID: US8785960B1
- Status: Granted
- Kind: B1
- Application number: 14/222,807
- Filed: 2014-03-24
- Published: 2014-07-24
- Granted: 2014-07-22
- Earliest claimed: 2012-01-24
- Assignees: Cooledge Lighting Inc.
- Applicants: Michael A. Tischler
- Inventors: Michael A. Tischler
- Web page: https://patentgrep.com/patent/US8785960B1

## CPC

- H10H 20/8511: {characterised by their material, e.g. binder}
- H05B 33/02: Details
- H05B 33/12: Light sources with substantially two-dimensional [2D] radiating surfaces
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10F 19/80: Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
- H10F 77/211: {for photovoltaic cells}
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 77/45: Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
- H10F 77/496: {Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F77/45)}
- H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80)
- H10F 99/00: Subject matter not provided for in other groups of this subclass
- H10H 20/8506: {Containers}
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/856: Reflecting means
- H10W 72/0198: {batch processes}
- H10W 90/00: Package configurations
- H10H 20/036: {of packages}
- H10H 20/0361: {of wavelength conversion means}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/874: {On different surfaces}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/10: characterised by their shape or disposition
- H10W 90/722: {between stacked chips}
- Y02E 10/52: PV systems with concentrators
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.

## Claims

### Claim 1

A composite wafer comprising:
a solid volume of a polymeric binder having a first surface and a second surface opposite the first surface;
suspended within the polymeric binder, a plurality of semiconductor dies each (i) having a first face, a second face opposite the first face, and at least one sidewall spanning the first and second faces, and (ii) being a bare-die light-emitting element comprising a plurality of active semiconductor layers that cooperatively emit light;
a reflecting layer disposed on a surface of the polymeric binder or disposed within at least a portion of the polymeric binder proximate at least one semiconductor die; and
disposed on the first face of each semiconductor die, at least two spaced-apart contacts each having a free terminal end (i) at least a portion of which is not covered by the polymeric binder and (ii) available for electrical connection, the contacts each contacting a different active semiconductor layer of the semiconductor die,
wherein (i) at least a portion of the polymeric binder is transparent to a wavelength of light emitted by at least one of the semiconductor dies, and (ii) the reflecting layer has a reflectivity of at least 50% to a wavelength of light emitted by at least one semiconductor die.

### Claim 2 (depends on 1)

The composite wafer of claim 1, wherein the polymeric binder comprises therein a wavelength-conversion material for absorption of at least a portion of light emitted from at least one of the semiconductor dies and emission of converted light having a different wavelength, converted light and unconverted light emitted by at least one semiconductor die combining to form substantially white light having a correlated color temperature in the range of 2000 K to 10,000 K.

### Claim 3 (depends on 2)

The composite wafer of claim 2, wherein a variation in color temperature of the white light emitted when each semiconductor die is individually energized is less than 500 K.

### Claim 4 (depends on 2)

The composite wafer of claim 2, wherein the wavelength-conversion material comprises at least one of a phosphor or quantum dots.

### Claim 5 (depends on 2)

The composite wafer of claim 2, wherein the substantially white light has a variation in color temperature of less than four MacAdam ellipses across the composite wafer.

### Claim 6 (depends on 2)

The composite wafer of claim 2, wherein the substantially white light has a variation in color temperature of less than two MacAdam ellipses across the composite wafer.

### Claim 7 (depends on 2)

The composite wafer of claim 2, wherein the polymeric binder comprises a plurality of discrete regions, at least one of which comprises the polymeric binder without the wavelength-conversion material.

### Claim 8 (depends on 2)

The composite wafer of claim 2, wherein the reflectivity of the reflecting layer to the wavelength of light emitted by the wavelength-conversion material is at least 50%.

### Claim 9 (depends on 2)

The composite wafer of claim 2, wherein the reflectivity of the reflecting layer to the wavelength of light emitted by the wavelength-conversion material is at least 75%.

### Claim 10 (depends on 2)

The composite wafer of claim 2, wherein the variation in color temperature of the white light emitted when each semiconductor die is individually energized is less than 250 K.

### Claim 11 (depends on 1)

The composite wafer of claim 1, wherein at least portions of the contacts of at least some of the semiconductor dies protrude from the polymeric binder.

### Claim 12 (depends on 1)

The composite wafer of claim 1, wherein at least portions of the contacts of all of the semiconductor dies protrude from the polymeric binder.

### Claim 13 (depends on 1)

The composite wafer of claim 1, wherein at least a portion of each said sidewall of at least some of the semiconductor dies protrudes from the first surface of the polymeric binder.

### Claim 14 (depends on 1)

The composite wafer of claim 1, wherein the polymeric binder comprises at least one of silicone or epoxy.

### Claim 15 (depends on 1)

The composite wafer of claim 1, wherein each semiconductor die comprises a bare-die light-emitting diode.

### Claim 16 (depends on 1)

The composite wafer of claim 1, wherein each semiconductor die comprises a semiconductor material comprising at least one of GaAs, AlAs, InAs, GaP, AlP, InP, ZnO, CdSe, CdTe, ZnTe, GaN, AlN, InN, silicon, or an alloy or mixture thereof.

### Claim 17 (depends on 1)

The composite wafer of claim 1, wherein the polymeric binder has a substantially uniform thickness with a thickness variation less than 10%.

### Claim 18 (depends on 1)

The composite wafer of claim 1, wherein a thickness of the polymeric binder above each of the plurality of semiconductor dies is the same to within 5%.

### Claim 19 (depends on 1)

The composite wafer of claim 1, wherein the semiconductor dies are arranged in an array having substantially equal distances between semiconductor dies in at least a first direction.

### Claim 20 (depends on 19)

The composite wafer of claim 19, wherein the array of semiconductor dies has substantially equal distances between semiconductor dies in a second direction different from the first direction.

### Claim 21 (depends on 1)

The composite wafer of claim 1, wherein at least a portion of the surface of the polymeric binder is textured with a texture for enhancing light extraction from the polymeric binder.

### Claim 22 (depends on 21)

The composite wafer of claim 21, wherein the texture has an average roughness in the range of about 0.5 μm to about 10 μm.

### Claim 23 (depends on 1)

The composite wafer of claim 1, further comprising at least one optical element positioned to receive light from at least one of the semiconductor dies.

### Claim 24 (depends on 23)

The composite wafer of claim 23, wherein the at least one optical element comprises a plurality of optical elements each associated with at least one semiconductor die.

### Claim 25 (depends on 1)

The composite wafer of claim 1, wherein the reflecting layer comprises at least one of (i) a reflecting film or (ii) a plurality of particles.

### Claim 26 (depends on 1)

The composite wafer of claim 1, wherein the active semiconductor layers of at least one semiconductor die are not disposed on a semiconductor substrate.

### Claim 27 (depends on 1)

The composite wafer of claim 1, wherein the polymeric binder comprises a plurality of shaped regions, each shaped region (i) associated with at least one semiconductor die and (ii) having a shape substantially identical to shapes of the other shaped regions.

### Claim 28 (depends on 1)

The composite wafer of claim 1, wherein the reflectivity of the reflecting layer to the wavelength of light emitted by at least one semiconductor die is at least 75%.

### Claim 29 (depends on 1)

The composite wafer of claim 1, wherein a thickness of the polymeric binder above a first semiconductor die is different from a thickness of the polymeric binder above a second semiconductor die different from the first semiconductor die.

### Claim 30 (depends on 1)

The composite wafer of claim 1, wherein the polymeric binder comprises therein a wavelength-conversion material for absorption of at least a portion of light emitted from at least one of the semiconductor dies and emission of converted light having a different wavelength.