# US 8,785,958 B2 · Light emitting element

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- Number: US 8,785,958 B2
- Document ID: US8785958B2
- Status: Granted
- Kind: B2
- Application number: 13/850,215
- Filed: 2013-03-25
- Published: 2013-08-15
- Granted: 2014-07-22
- Earliest claimed: 2002-07-15
- Assignees: Epistar Corporation
- Applicants: Epistar Corporation
- Inventors: Ciu-Lin Yao; Min-Hsun Hsieh; Wen-Huang Liu
- Web page: https://patentgrep.com/patent/US8785958B2

## CPC

- H10H 20/833: Transparent materials
- F21K 9/00: Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- H10W 90/00: Package configurations
- H10H 29/14: comprising multiple light-emitting semiconductor components
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- F21K: NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light emitting element is provided in this application, including a carrier; a conductive connecting structure disposed on the carrier and including a transparent conductive connecting layer; and an epitaxial stack structure disposed on the conductive connecting structure and including a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width.

## Claims

### Claim 1

A light emitting element comprising:
a carrier;
a conductive connecting structure disposed on the carrier; and
an epitaxial stack structure disposed on the conductive connecting structure and comprising a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width;
wherein at least one of the epitaxial stack structures has a side wall aligning with an outmost boundary of the carrier.

### Claim 2 (depends on 1)

The light emitting element according to claim 1, wherein the conductive connecting structure comprises a transparent conductive connecting layer.

### Claim 3 (depends on 1)

The light emitting element according to claim 1, wherein the conductive connecting structure comprises a conductive connecting layer formed on the carrier, a reflective layer formed on the conductive connecting layer, and a transparent conductive layer formed between the reflective layer and the epitaxial stack structure.

### Claim 4 (depends on 1)

The light emitting element according to claim 1, wherein the electrically connected epitaxial light-emitting stacks are electrically connected via at least a metal layer.

### Claim 5 (depends on 4)

The light emitting element according to claim 4, wherein the electrically connected epitaxial light-emitting stacks are formed in a serial connection.

### Claim 6 (depends on 1)

The light emitting element according to claim 1, further comprising a transparent conductive layer connecting one of the electrically connected epitaxial light-emitting stacks to another.

### Claim 7 (depends on 6)

The light emitting element according to claim 6, wherein the electrically connected epitaxial light-emitting stacks are formed in a serial connection.

### Claim 8 (depends on 6)

The light emitting element according to claim 6, wherein the transparent conductive layer includes at least one material selected from the group consisting of ITO, SnO, CdSnO, TiSnO, ZnO and ZnSnO.

### Claim 9

A light emitting element comprising:
a carrier;
a conductive connecting structure disposed on the carrier; and
an epitaxial stack structure disposed on the conductive connecting structure and comprising a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width;
wherein the conductive connecting structure comprises a conductive connecting layer formed on the carrier, a reflective layer formed on the conductive connecting layer, and a transparent conductive layer formed between the reflective layer and the epitaxial stack structure.

### Claim 10 (depends on 9)

The light emitting element according to claim 9, wherein the electrically connected epitaxial light-emitting stacks are electrically connected via at least a metal layer.

### Claim 11 (depends on 10)

The light emitting element according to claim 10, wherein the electrically connected epitaxial light-emitting stacks are formed in a serial connection.

### Claim 12 (depends on 9)

The light emitting element according to claim 9, wherein the transparent conductive layer includes at least one material selected from the group consisting of ITO, SnO, CdSnO, TiSnO, ZnO and ZnSnO.