# US 8,785,954 B2 · Organic light-emitting device

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- Number: US 8,785,954 B2
- Document ID: US8785954B2
- Status: Granted
- Kind: B2
- Application number: 13/437,246
- Filed: 2012-04-02
- Published: 2012-11-15
- Granted: 2014-07-22
- Earliest claimed: 2011-05-11
- Assignees: Samsusng Display Co., Ltd.
- Applicants: Joon-Gu Lee; Won-Jong Kim; Ji-Young Choung; Jin-Baek Choi; Yeon-Hwa Lee; Young-Woo Song; Jong-Hyuk Lee
- Inventors: Joon-Gu Lee; Won-Jong Kim; Ji-Young Choung; Jin-Baek Choi; Yeon-Hwa Lee; Young-Woo Song; Jong-Hyuk Lee
- Web page: https://patentgrep.com/patent/US8785954B2

## CPC

- H10K 50/17: Carrier injection layers
- H10K 59/80517: {Multilayers, e.g. transparent multilayers}
- H10K 59/80518: {Reflective anodes, e.g. ITO combined with thick metallic layers}
- H10K 59/875: {Arrangements for extracting light from the devices}
- H10K 59/878: {comprising reflective means}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An organic light-emitting device includes a substrate, an anode including Ag on the substrate, a transparent inorganic thin-film layer on the anode, the transparent inorganic thin-film layer being in contact with the anode and having non-conductive characteristics; and an emitting layer and a cathode disposed sequentially on the inorganic thin-film layer.

## Claims

### Claim 1

An organic light-emitting device, comprising:
a substrate;
an anode including Ag directly on the substrate;
an inorganic thin-film layer directly on the anode; and
an emitting layer and a cathode disposed sequentially on the inorganic thin-film layer,
wherein the inorganic thin-film layer includes at least one of LiF, MgF2, Yb2O3, InAsOx, and InPOx.

### Claim 2 (depends on 1)

The organic light-emitting device of claim 1, wherein the thin-film layer has dipole characteristics.

### Claim 3 (depends on 1)

The organic light-emitting device of claim 1, wherein the thin-film layer includes a transparent inorganic material having non-conductive characteristics.

### Claim 4 (depends on 1)

The organic light-emitting device of claim 1, wherein the thin-film layer has an extinction coefficient value of 0.001 or less for light of wavelengths of 420 to 480 nm.

### Claim 5 (depends on 4)

The organic light-emitting device of claim 4, wherein the thin-film layer includes an In-containing oxide.

### Claim 6 (depends on 1)

The organic light-emitting device of claim 1, wherein the anode is thicker than the thin-film layer.

### Claim 7 (depends on 6)

The organic light-emitting device of claim 6, wherein the thin-film layer has a thickness of 10 to 200 Å.

### Claim 8

An organic light-emitting device, comprising:
a substrate;
an anode including Ag on the substrate;
a thin-film layer on the anode, the thin-film layer in contact with the anode; and
an emitting layer and a cathode disposed sequentially on the thin-film layer,
wherein the thin-film layer has an extinction coefficient value of 0.001 or less for light of wavelengths of 420 to 480 nm and the thin-film layer includes InAsOx or InPOx.

### Claim 9 (depends on 8)

The organic light-emitting device of claim 8, wherein the thin-film layer has dipole characteristics.

### Claim 10 (depends on 8)

The organic light-emitting device of claim 8, wherein the thin-film layer has a thickness of 10 to 200 Å.

### Claim 11 (depends on 8)

The organic light-emitting device of claim 8, further comprising a hole injecting layer, a hole transporting layer, and an electron transporting layer, wherein the hole injecting layer and the hole transporting layer are disposed sequentially on the thin-film layer, the emitting layer is disposed on the hole transporting layer, and the electron transporting layer and the cathode are disposed sequentially on the emitting layer.

### Claim 12 (depends on 11)

The organic light-emitting device of claim 11, wherein a contact surface of the thin-film layer in contact with the hole injecting layer is uneven.

### Claim 13

An organic light-emitting device, comprising:
a substrate;
an anode including Ag on the substrate;
a thin-film layer on the anode, the thin-film layer being in contact with the anode;
an emitting layer and a cathode disposed sequentially on the thin-film layer;
a hole injecting layer;
a hole transporting layer; and
an electron transporting layer, wherein the hole injecting layer and the hole transporting layer are disposed sequentially on the thin-film layer, the emitting layer is disposed on the hole transporting layer, and the electron transporting layer and the cathode are disposed sequentially on the emitting layer, wherein a contact surface of the thin-film layer in contact with the hole injecting layer is uneven.

### Claim 14 (depends on 13)

The organic light-emitting device of claim 13, wherein the thin-film layer includes at least one of LiF, MgF2, Yb2O3, InAsOx, and InPOx.