# US 8,785,952 B2 · Light emitting device and light emitting device package including the same

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- Number: US 8,785,952 B2
- Document ID: US8785952B2
- Status: Granted
- Kind: B2
- Application number: 13/366,991
- Filed: 2012-02-06
- Published: 2012-05-31
- Granted: 2014-07-22
- Earliest claimed: 2011-10-10
- Assignees: LG Innotek Co., Ltd.
- Applicants: Dongwook Park
- Inventors: Dongwook Park
- Web page: https://patentgrep.com/patent/US8785952B2

## CPC

- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/831: characterised by their shape
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/8516: {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A light emitting device is disclosed. The light emitting device includes a first electrode and a second electrode, which have different areas, thereby achieving enhanced bonding reliability.

## Claims

### Claim 1

A light emitting device package comprising a light emitting device, wherein the light emitting device includes:
a support member;
a light emitting structure including a first semiconductor layer disposed on the support member, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer;
a first electrode disposed on the first semiconductor layer in a first region through which the first semiconductor layer is exposed;
a second electrode disposed on the second semiconductor layer;
an insulating layer disposed at least between the first electrode and the second electrode;
a light transmittable electrode layer disposed between the second semiconductor layer and the second electrode; and
a reflective layer between the light transmittable electrode layer and the second electrode, and the light emitting structure,
wherein the first semiconductor layer is a different layer than the second semiconductor layer, the active layer includes at least one pair of a well layer and a barrier layer, and a band gap of the well layer is less than a band gap of the barrier layer, and
wherein an area of an upper surface of the first electrode is in a range of 40% to 90% of an area of the second semiconductor layer,
wherein the reflective layer is formed from an upper surface of the second semiconductor layer to an upper surface of the first semiconductor layer along a lateral surface of the second semiconductor layer and a lateral surface of the active layer,
wherein the reflective layer includes at least a first layer having a first index of refraction and a second layer having a second index of refraction that is different from the first index of refraction,
wherein the first layer and the second layer of the reflective layer are alternately and repeatedly stacked one above another,
wherein the first layer comprises SiO2 or Al2O3,
wherein the second layer comprises TiO2, and
wherein the second electrode is connected to the light transmittable electrode layer through an opening of the reflective layer.

### Claim 2 (depends on 1)

The light emitting device package according to claim 1, wherein the second electrode has an area in a range of 40% to 99% of the area of the second semiconductor layer.

### Claim 3 (depends on 1)

The light emitting device package according to claim 1, wherein the first electrode or the second electrode has a tetragonal shape, a polygonal shape or a circular shape when viewed from the top.

### Claim 4 (depends on 1)

The light emitting device package according to claim 1, wherein an upper surface of the insulating layer is located on a same plane as the upper surfaces of the first electrode and the second electrode.