# US 8,785,949 B2 · Light emitting apparatus and method for manufacturing the same

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- Number: US 8,785,949 B2
- Document ID: US8785949B2
- Status: Granted
- Kind: B2
- Application number: 13/417,362
- Filed: 2012-03-12
- Published: 2012-09-13
- Granted: 2014-07-22
- Earliest claimed: 2001-11-09
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Shunpei Yamazaki; Satoshi Murakami; Masayuki Sakakura; Toru Takayama
- Inventors: Shunpei Yamazaki; Satoshi Murakami; Masayuki Sakakura; Toru Takayama
- Web page: https://patentgrep.com/patent/US8785949B2

## CPC

- H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6715: {characterised by the doping profiles, e.g. having lightly-doped source or drain extensions}
- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/6733: {Multi-gate TFTs}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 30/865: {Intermediate layers comprising a mixture of materials of the adjoining active layers}
- H10K 59/1201: {Manufacture or treatment}
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K 59/871: {Self-supporting sealing arrangements}
- H10K 59/873: {Encapsulations}
- H10K 71/851: {Division of substrate}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.

## Claims

### Claim 1

A light emitting device comprising:
an organic insulation layer over an end of a first electrode;
an inorganic insulation layer over an upper surface and a side surface of the organic insulation layer, the inorganic insulation layer having an opening over the first electrode;
a light emitting layer comprising an organic material over the first electrode and the inorganic insulation layer; and
a second electrode over the light emitting layer,
wherein the inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×1021 atoms/cm3 or less.

### Claim 2 (depends on 1)

The light emitting device according to claim 1,
wherein the first electrode is an anode layer.

### Claim 3 (depends on 1)

The light emitting device according to claim 1,
wherein the second electrode is a cathode layer.

### Claim 4 (depends on 1)

The light emitting device according to claim 1,
wherein the light emitting layer is provided over a substrate comprising an organic resin substrate.

### Claim 5 (depends on 4)

The light emitting device according to claim 4,
wherein the organic resin substrate comprises polyimide.

### Claim 6

A light emitting device comprising:
an organic insulation layer over an end of a first electrode;
an inorganic insulation layer over an upper surface and a side surface of the organic insulation layer, the inorganic insulation layer having an opening over the first electrode;
a light emitting layer comprising an organic material over the first electrode and the inorganic insulation layer;
a second electrode over the light emitting layer; and
a transistor electrically connected to the first electrode,
wherein the inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×1021 atoms/cm3 or less.

### Claim 7 (depends on 6)

The light emitting device according to claim 6,
wherein the first electrode is an anode layer.

### Claim 8 (depends on 6)

The light emitting device according to claim 6,
wherein the second electrode is a cathode layer.

### Claim 9 (depends on 6)

The light emitting device according to claim 6,
wherein the light emitting layer is provided over a substrate comprising an organic resin substrate.

### Claim 10 (depends on 9)

The light emitting device according to claim 9,
wherein the organic resin substrate comprises polyimide.

### Claim 11 (depends on 6)

The light emitting device according to claim 6,
wherein a channel forming region of the transistor comprises amorphous silicon.

### Claim 12

A light emitting device comprising:
an organic insulation layer over an end of a first electrode;
an inorganic insulation layer over an upper surface and a side surface of the organic insulation layer, the inorganic insulation layer having an opening over the first electrode;
a light emitting layer comprising an organic material over the first electrode and the inorganic insulation layer; and
a second electrode over the light emitting layer,
wherein the side surface of the organic insulation layer is an inclined surface having a curvature.

### Claim 13 (depends on 12)

The light emitting device according to claim 12,
wherein the inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×1021 atoms/cm3 or less.

### Claim 14 (depends on 12)

The light emitting device according to claim 12,
wherein the first electrode is an anode layer.

### Claim 15 (depends on 12)

The light emitting device according to claim 12,
wherein the second electrode is a cathode layer.

### Claim 16 (depends on 12)

The light emitting device according to claim 12,
wherein the light emitting layer is provided over a substrate comprising an organic resin substrate.

### Claim 17 (depends on 16)

The light emitting device according to claim 16,
wherein the organic resin substrate comprises polyimide.

### Claim 18

A light emitting device comprising:
an organic insulation layer over an end of a first electrode;
an inorganic insulation layer over an upper surface and a side surface of the organic insulation layer, the inorganic insulation layer having an opening over the first electrode;
a light emitting layer comprising an organic material over the first electrode and the inorganic insulation layer;
a second electrode over the light emitting layer; and
a transistor electrically connected to the first electrode,
wherein the side surface of the organic insulation layer is an inclined surface having a curvature.

### Claim 19 (depends on 18)

The light emitting device according to claim 18,
wherein the inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×1021 atoms/cm3 or less.

### Claim 20 (depends on 18)

The light emitting device according to claim 18,
wherein the first electrode is an anode layer.

### Claim 21 (depends on 18)

The light emitting device according to claim 18,
wherein the second electrode is a cathode layer.

### Claim 22 (depends on 18)

The light emitting device according to claim 18,
wherein the light emitting layer is provided over a substrate comprising an organic resin substrate.

### Claim 23 (depends on 22)

The light emitting device according to claim 22,
wherein the organic resin substrate comprises polyimide.

### Claim 24 (depends on 18)

The light emitting device according to claim 18,
wherein a channel forming region of the transistor comprises amorphous silicon.

### Claim 25

A light emitting device, comprising:
a first inorganic insulation layer over and in contact with an anode layer;
a light emitting layer comprising an organic material overlapping with the anode layer and the first inorganic insulation layer;
a cathode layer over and in contact with the light emitting layer; and
a second inorganic insulation layer over the cathode layer,
wherein at least one of the first inorganic insulation layer and the second inorganic insulation layer is a silicon nitride layer having hydrogen concentration of 1×1021 atoms/cm3 or less.

### Claim 26 (depends on 25)

The light emitting device according to claim 25, further comprising an organic insulation layer over an end of the anode layer.