# US 8,785,947 B2 · Semiconductor substrate for growth of an epitaxial semiconductor device

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- Number: US 8,785,947 B2
- Document ID: US8785947B2
- Status: Granted
- Kind: B2
- Application number: 12/648,012
- Filed: 2009-12-28
- Published: 2010-07-01
- Granted: 2014-07-22
- Earliest claimed: 2008-12-30
- Assignees: National Chung Hsing University
- Applicants: Dong-Sing Wuu; Ray-Hua Horng; Chia-Cheng Wu; Po-Rung Lin
- Inventors: Dong-Sing Wuu; Ray-Hua Horng; Chia-Cheng Wu; Po-Rung Lin
- Web page: https://patentgrep.com/patent/US8785947B2

## CPC

- H10P 14/3241: {being conductive materials}
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/018: {Bonding of wafers}
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/3226: {Oxides}
- H10P 14/3248: {consisting of two layers}
- H10P 14/3256: {Microstructure}
- H10P 14/3416: {Nitrides}
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.

## Claims

### Claim 1

A semiconductor substrate for growth of an epitaxial semiconductor device thereon, said semiconductor substrate comprising:
a base layer;
a sacrificial layer formed on said base layer, and including a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of said sacrificial film regions, each of said sacrificial film regions having a plurality of nanostructures and a plurality of second passages defined among said nanostructures, said second passages being communicated spatially with said first passages and having a width less than that of said first passages; and
an epitaxial layer disposed on said sacrificial layer,
wherein a selective etching ratio of said sacrificial layer to said epitaxial layer is greater than 5; and
wherein said epitaxial layer does not fill said first passages.

### Claim 2 (depends on 1)

The semiconductor substrate of claim 1, wherein said first passages are in fluid communication with each other.

### Claim 3 (depends on 1)

The semiconductor substrate of claim 1, wherein each of said nanostructures is selected from the group consisting of nano-columns, nano-rods, nano-needles, nanotubes, and combinations thereof.

### Claim 4 (depends on 1)

The semiconductor substrate of claim 1, wherein each of said nanostructures has a diameter ranging from 5 nm to 500 nm.

### Claim 5 (depends on 1)

The semiconductor substrate of claim 1, wherein each of said second passages has a width ranging from 5 nm to 500 nm.

### Claim 6 (depends on 1)

The semiconductor substrate of claim 1, wherein each of said sacrificial film regions has a flat dense film portion in proximity to said epitaxial layer.

### Claim 7 (depends on 1)

The semiconductor substrate of claim 1, wherein each of said first passages has a width ranging from 1 μm to 10 μm.

### Claim 8 (depends on 1)

The semiconductor substrate of claim 1, wherein each of said first passages has a height ranging from 0.5 μm to 5 μm.

### Claim 9 (depends on 1)

The semiconductor substrate of claim 1, wherein said epitaxial layer is made from gallium nitride.