# US 8,785,937 B2 · Organic light-emitting display apparatus and method of manufacturing the same

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- Number: US 8,785,937 B2
- Document ID: US8785937B2
- Status: Granted
- Kind: B2
- Application number: 13/244,174
- Filed: 2011-09-23
- Published: 2012-06-14
- Granted: 2014-07-22
- Earliest claimed: 2010-12-14
- Assignees: Samsung Display Co., Ltd.
- Applicants: June-Woo Lee; Joon-Hoo Choi
- Inventors: June-Woo Lee; Joon-Hoo Choi
- Web page: https://patentgrep.com/patent/US8785937B2

## CPC

- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D 30/0312: {characterised by the gate electrodes}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT]
- G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer}
- H10D 30/0316: {of lateral bottom-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 86/40: characterised by multiple TFTs
- H10K 59/1201: {Manufacture or treatment}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

An organic light-emitting display apparatus that includes a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes electrically connected to the active layer; a pixel electrode formed on the same layer as the gate electrode; a light-emitting layer formed on the pixel electrode; a passivation layer formed on upper surfaces of the source and drain electrodes and upper surfaces of wirings formed on the same layer as the source and drain electrodes; an organic insulating layer that covers the thin film transistor, comprises an opening that exposes an upper surface of the pixel electrode, and directly contacts the passivation layer; and a facing electrode that is formed on the light-emitting layer, and is formed to directly contact the organic insulating layer to face the pixel electrode.

## Claims

### Claim 1

An organic light-emitting display apparatus comprising:
a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes electrically connected to the active layer, the gate electrode comprising a first gate electrode disposed on the active layer and a second gate electrode formed on the first gate electrode;
a pixel electrode formed on the same layer as the first gate electrode;
a light-emitting layer formed on the pixel electrode;
a passivation layer formed on upper surfaces of the source and drain electrodes and formed on an upper surface of a wiring that is formed on the same layer as the source and drain electrodes;
an organic insulating layer that is formed on the passivation layer and covers the thin film transistor, the organic insulating layer comprising an opening that exposes an upper surface of the pixel electrode, the organic insulating layer directly contacting the passivation layer;
a lower electrode formed on the same layer as the active layer;
an upper electrode disposed on the lower electrode and formed on the same layer as the first gate electrode, the lower electrode and the upper electrode forming a capacitor, the organic insulating layer directly contacting the upper electrode; and
a facing electrode that is formed on the light-emitting layer, and is formed to directly contact the organic insulating layer to face the pixel electrode.

### Claim 2 (depends on 1)

The organic light-emitting display apparatus of claim 1, wherein an edge side of the passivation layer has the same etching surface as edge sides of the source and drain electrodes and an edge side of the wiring.

### Claim 3 (depends on 2)

The organic light-emitting display apparatus of claim 2, wherein the organic insulating layer directly contacts the edge side of the passivation layer.

### Claim 4 (depends on 1)

The organic light-emitting display apparatus of claim 1, wherein the passivation layer comprises an inorganic insulating material.

### Claim 5 (depends on 1)

The organic light-emitting display apparatus of claim 1, wherein the passivation layer comprises an organic insulating material.

### Claim 6 (depends on 1)

The organic light-emitting display apparatus of claim 1, wherein the wiring is a data line.

### Claim 7 (depends on 1)

The organic light-emitting display apparatus of claim 1, wherein the wiring is a power supply line.

### Claim 8 (depends on 1)

The organic light-emitting display apparatus of claim 1, further comprising:
a first insulating layer disposed between the active layer and the gate electrode; and
a second insulating layer formed between the gate electrode and the source and drain electrodes, wherein one of the source and drain electrodes is connected to the pixel electrode through a contact hole formed in the second insulating layer.

### Claim 9 (depends on 1)

The organic light-emitting display apparatus of claim 1, wherein the gate electrode includes a transparent conductive material, and the pixel electrode includes the transparent conductive material of the gate electrode.

### Claim 10 (depends on 1)

The organic light-emitting display apparatus of claim 1, wherein the facing electrode is a reflection electrode.

### Claim 11 (depends on 1)

The organic light-emitting display apparatus of claim 1, wherein the lower electrode comprises a semiconductor doped with an ion dopant.

### Claim 12 (depends on 1)

The organic light-emitting display apparatus of claim 1, wherein the first gate electrode includes a transparent conductive material, and the upper electrode includes the transparent conductive material of the first gate electrode.

### Claim 13 (depends on 12)

The organic light-emitting display apparatus of claim 12, wherein the transparent conductive material of the first gate electrode is at least one selected from the group consisting of ITO, IZO, ZnO, and In2O3.

### Claim 14

A method of manufacturing an organic light-emitting display apparatus, the method comprising:
performing a first mask process for forming an active layer of a thin film transistor and for forming a lower electrode of a capacitor, the lower electrode formed on the same layer as the active layer;
performing a second mask process for forming a first insulating layer on the resultant structure of the first mask process, for forming a first gate electrode of the thin film transistor, an upper electrode of the capacitor and a pixel electrode of a pixel unit by patterning a transparent conductive material layer, and for forming a second gate electrode of the thin film transistor by patterning a first metal layer after sequentially forming the transparent conductive material layer and the first metal layer on the first insulating layer, a gate electrode of the thin film transistor comprising the first gate electrode disposed on the active layer and the second gate electrode formed on the first gate electrode, the pixel electrode formed on the same layer as the first gate electrode, the upper electrode disposed on the lower electrode and formed on the same layer as the first gate electrode, the lower electrode and the upper electrode forming the capacitor;
performing a third mask process for forming a second insulating layer on the resultant structure of the second mask process, and for forming contact holes that expose source and drain regions of the active layer and the pixel electrode;
performing a fourth mask process for sequentially forming a second metal layer and a passivation layer on the resultant structure of the third mask process, and for forming source and drain electrodes connected to the active layer and a wiring formed on the same layer as the source and drain electrodes by patterning the second metal layer and the passivation layer, the thin film transistor comprising the active layer, the gate electrode, and the source and drain electrodes electrically connected to the active layer, the passivation layer formed on upper surfaces of the source and drain electrodes and formed on an upper surface of the wiring that is formed on the same layer as the source and drain electrodes;
performing a fifth mask process for forming an organic insulating layer on the resultant structure of the fourth mask process, and for forming an opening on the organic insulating layer to expose the pixel electrode, the organic insulating layer being formed on the passivation layer and covering the thin film transistor, the organic insulating layer comprising the opening that exposes an upper surface of the pixel electrode, the organic insulating layer directly contacting the passivation layer, the organic insulating layer directly contacting the upper electrode; and
sequentially forming a light-emitting layer and a facing electrode on the pixel electrode after performing the fifth mask process, the light-emitting layer formed on the pixel electrode, the facing electrode being formed on the light-emitting layer, and being formed to directly contact the organic insulating layer to face the pixel electrode.

### Claim 15 (depends on 14)

The method of claim 14, further comprising doping the source and drain regions with an ion dopant after performing the second mask process.

### Claim 16 (depends on 14)

The method of claim 14, wherein the fourth mask process comprises:
a first etching process for removing a portion of the passivation layer;
a second etching process for removing the second metal layer stacked on the pixel electrode; and
a third etching process for removing the first metal layer formed on the transparent conductive material layer of the pixel electrode.

### Claim 17 (depends on 16)

The method of claim 16, wherein the first etching process is a dry etching process.

### Claim 18 (depends on 14)

The method of claim 14, further comprising doping the lower electrode of the capacitor with an ion dopant after performing the fourth mask process.