# US 8,785,934 B2 · Thin film transistor substrate for display panel

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- Number: US 8,785,934 B2
- Document ID: US8785934B2
- Status: Granted
- Kind: B2
- Application number: 13/677,176
- Filed: 2012-11-14
- Published: 2013-03-21
- Granted: 2014-07-22
- Earliest claimed: 2005-12-28
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Sang-Woo Whangbo; Shi-Yul Kim; Sung-Hoon Yang; Woo-Geun Lee
- Web page: https://patentgrep.com/patent/US8785934B2

## CPC

- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 86/0231: {using masks, e.g. half-tone masks}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

## Claims

### Claim 1

A thin film transistor substrate comprising:
a base substrate;
a gate electrode formed on the base substrate;
a gate insulating layer including at least one of silicon nitride (SiNx) and silicon oxide (SiO2) formed on the base substrate to cover the gate electrode;
a first surface treating layer formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas including ammonia;
an active layer formed on the first surface treating layer to cover the gate electrode, the active layer including amorphous silicon (a-Si); and
a source electrode and a drain electrode spaced apart from the source electrode by a predetermined distance, the source and drain electrodes being formed on the active layer.

### Claim 2 (depends on 1)

The thin film transistor substrate of claim 1, wherein the thickness of the first surface treating layer is about 15 Å to about 25 Å.

### Claim 3 (depends on 1)

The thin film transistor substrate of claim 1, further comprising a second surface treating layer formed on the active layer between the source electrode and the drain electrode by treating the active layer with an additional nitrogen-containing gas.

### Claim 4 (depends on 3)

The thin film transistor substrate of claim 3, wherein the thickness of the second surface treating layer is about 15 Å to about 25 Å.

### Claim 5 (depends on 1)

The thin film transistor substrate of claim 1, further comprising an ohmic contact layer formed between the source electrode and the active layer, and between the drain electrode and the active layer.

### Claim 6 (depends on 5)

The thin film transistor substrate of claim 5, wherein the ohmic contact layer comprises a highly ion-doped amorphous silicon.

### Claim 7 (depends on 1)

The thin film transistor substrate of claim 1, wherein each of the source electrode and the drain electrode comprises a triple layer having a molybdenum layer, an aluminum layer and a molybdenum layer.

### Claim 8

A display panel comprising:
a first substrate having a base substrate;
a gate electrode formed on the base substrate;
a gate insulating layer including at least one of silicon nitride (SiNx) and silicon oxide (SiO2) formed on the base substrate to cover the gate electrode;
a first surface treating layer formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas including ammonia;
an active layer formed on the first surface treating layer to cover the gate electrode, the active layer including amorphous silicon (a-Si); and
a source electrode and a drain electrode spaced apart from the source electrode by a predetermined distance, the source and drain electrodes being formed on the active layer;
a second substrate facing the first substrate; and
a liquid crystal layer between the first substrate and the second substrate.

### Claim 9 (depends on 8)

The display panel of claim 8, further comprising a second surface treating layer formed on the active layer between the source electrode and the drain electrode by treating the active layer with an additional nitrogen-containing gas.