# US 8,785,932 B2 · IR sensing transistor and manufacturing method of display device including the same

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- Number: US 8,785,932 B2
- Document ID: US8785932B2
- Status: Granted
- Kind: B2
- Application number: 13/182,235
- Filed: 2011-07-13
- Published: 2012-06-07
- Granted: 2014-07-22
- Earliest claimed: 2010-12-01
- Assignees: Samsung Display Co., Ltd.
- Applicants: Suk Won Jung; Byeong Hoon Cho; Sung Hoon Yang; Woong Kwon Kim; Sang Youn Han; Dae Cheol Kim; Ki-Hun Jeong; Kyung-Sook Jeon; Seung Mi Seo; Jung-Suk Bang; Kun-Wook Han
- Inventors: Suk Won Jung; Byeong Hoon Cho; Sung Hoon Yang; Woong Kwon Kim; Sang Youn Han; Dae Cheol Kim; Ki-Hun Jeong; Kyung-Sook Jeon; Seung Mi Seo; Jung-Suk Bang; Kun-Wook Han
- Web page: https://patentgrep.com/patent/US8785932B2

## CPC

- G02F 1/13338: {Input devices, e.g. touch panels}
- G06F 3/042: by opto-electronic means
- H10D 30/6723: {having light shields}
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- G02F 1/13312: {Circuits comprising photodetectors for purposes other than feedback}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

## Claims

### Claim 1

An IR sensing transistor, comprising:
a light blocking layer formed on a substrate and configured to act as a gate of the IR sensing transistor;
a gate insulating layer formed on the light blocking layer;
a semiconductor formed on the gate insulating layer;
a pair of ohmic contact members formed on the semiconductor;
a source electrode and a drain electrode formed on respective ones of the ohmic contact members;
a passivation layer formed on the source electrode and the drain electrode; and
a gate electrode formed on the passivation layer,
wherein substantially all of the gate insulating layer lies on the light blocking layer.

### Claim 2 (depends on 1)

The IR sensing transistor of claim 1, wherein:
the source electrode and the drain electrode are positioned within an outer edge of the light blocking layer.

### Claim 3 (depends on 2)

The IR sensing transistor of claim 2, wherein:
the source electrode and the drain electrode both at least partially overlap the gate electrode, and at least two source electrodes are disposed in alternating manner with at least two drain electrodes.

### Claim 4 (depends on 1)

The IR sensing transistor of claim 1, wherein:
the gate electrode and the light blocking layer are connected through contact holes formed in the passivation layer and the gate insulating layer.

### Claim 5 (depends on 4)

The IR sensing transistor of claim 4, wherein:
the semiconductor comprises amorphous silicon, microcrystalline amorphous silicon germanium, or amorphous germanium.

### Claim 6 (depends on 5)

The IR sensing transistor of claim 5, wherein:
the light blocking layer comprises amorphous germanium or amorphous silicon germanium.

### Claim 7 (depends on 1)

The IR sensing transistor of claim 1, further comprising:
a conductive layer positioned on the light blocking layer; and
a lower gate electrode positioned on the conductive layer.

### Claim 8 (depends on 7)

The IR sensing transistor of claim 7, wherein:
the conductive layer includes at least one of titanium, molybdenum, a titanium compound, and a molybdenum compound.

### Claim 9 (depends on 8)

The IR sensing transistor of claim 8, wherein:
the conductive layer has a thickness in the range of about 50 to about 100 Å.

### Claim 10 (depends on 1)

The IR sensing transistor of claim 1, further comprising:
a lower gate electrode positioned on the light blocking layer,
wherein conductive impurities are doped into the light blocking layer.

### Claim 11 (depends on 10)

The IR sensing transistor of claim 10, wherein:
a thickness of the light blocking layer is about 300 Å or more.

### Claim 12 (depends on 11)

The IR sensing transistor of claim 11, wherein:
the conductive impurities comprise phosphorus.