# US 8,785,928 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,928 B2 - Document ID: US8785928B2 - Status: Granted - Kind: B2 - Application number: 13/905,476 - Filed: 2013-05-30 - Published: 2013-12-05 - Granted: 2014-07-22 - Earliest claimed: 2012-05-31 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki; Kenichi Okazaki; Masahiro Watanabe; Takuya Handa - Web page: https://patentgrep.com/patent/US8785928B2 ## CPC - G09G 3/3648: {using an active matrix (G09G3/367 - G09G3/3696 take precedence)} - G09G 3/3225: using an active matrix - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - G09G 2300/0439: Pixel structures - G09G 2310/08: Details of timing specific for flat panels, other than clock recovery - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A highly reliable semiconductor device that includes a transistor including an oxide semiconductor, which can display a high-definition image and can be manufactured with a high yield. The semiconductor device includes a pixel portion including a plurality of pixels, a gate signal line driver circuit portion, and a source signal line driver circuit portion including a first circuit that controls timing of sampling video signals and a second circuit that samples the video signals in accordance with the timing and then inputs the sampled video signals to the pixels. The second circuit includes a plurality of transistors in each of which an oxide semiconductor stacked layer is used as a channel formation region, the first circuit and the second circuit are electrically connected to each other by a wiring, and the wiring is electrically connected to gates of at least two transistors of the plurality of transistors. ## Claims ### Claim 1 A semiconductor device comprising: a pixel portion including a plurality of pixels; and a source signal line driver circuit portion including a first circuit and a second circuit, wherein the first circuit is configured to control timing for sampling video signals, wherein the second circuit is configured to sample the video signals in accordance with the timing and is configured to input sampled video signals to the plurality of pixels, wherein the second circuit includes a first transistor and a second transistor, the first transistor comprising a first oxide semiconductor film and a second oxide semiconductor film which are stacked with each other, wherein the first oxide semiconductor film comprises indium and a Group 13 element other than the indium and has a composition where an atomic percent of the indium is greater than an atomic percent of the Group 13 element other than the indium, wherein the second oxide semiconductor film comprises indium and a Group 13 element other than the indium and has a composition where an atomic percent of the indium is less than or equal to an atomic percent of the Group 13 element other than the indium, wherein the first circuit and the second circuit are electrically connected to each other by a wiring, and wherein the wiring is electrically connected to a gate of the first transistor and a gate of the second transistor. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the first circuit includes a semiconductor element using a single crystal semiconductor substrate. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the first transistor and the second transistor each has a field effect mobility of 20 cm2/Vs or higher. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the first oxide semiconductor film has a composition where an atomic percent of the indium is greater than twice of an atomic percent of the Group 13 element other than the indium. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the Group 13 element other than the indium is gallium. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, wherein the first oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 3:1:2. ### Claim 7 (depends on 5) The semiconductor device according to claim 5, wherein the second oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 1:1:1. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the first transistor and the second transistor each comprises silicon and nitrogen as a gate insulating film. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein the first oxide semiconductor film or the second oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein the first oxide semiconductor film or the second oxide semiconductor film comprises an amorphous oxide semiconductor. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, wherein the first transistor further comprises a third oxide semiconductor film, wherein the first oxide semiconductor film is interposed between the second oxide semiconductor film and the third oxide semiconductor film, and wherein the third oxide semiconductor film comprises indium and a Group 13 element other than the indium and has a composition where an atomic percent of the indium is less than or equal to an atomic percent of the Group 13 element other than the indium. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the third oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor. ### Claim 13 (depends on 11) The semiconductor device according to claim 11, wherein the third oxide semiconductor film comprises an amorphous oxide semiconductor. ### Claim 14 (depends on 11) The semiconductor device according to claim 11, wherein the Group 13 element other than the indium is gallium, and wherein the first oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 3:1:2. ### Claim 15 (depends on 11) The semiconductor device according to claim 11, wherein the Group 13 element other than the indium is gallium, and wherein the second oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 1:3:2. ### Claim 16 (depends on 11) The semiconductor device according to claim 11, wherein the Group 13 element other than the indium is gallium, and wherein the third oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 1:1:1.