# US 8,785,926 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,926 B2 - Document ID: US8785926B2 - Status: Granted - Kind: B2 - Application number: 13/860,879 - Filed: 2013-04-11 - Published: 2013-10-17 - Granted: 2014-07-22 - Earliest claimed: 2012-04-17 - Assignees: Semiconductor Energy Laboratory Co., Ltd.; Sharp Kabushiki Kaisha - Applicants: Masatoshi Yokoyama; Tsutomu Murakawa; Kenichi Okazaki; Masayuki Sakakura; Takuya Matsuo; Yosuke Kanzaki; Hiroshi Matsukizono; Yoshitaka Yamamoto - Inventors: Masatoshi Yokoyama; Tsutomu Murakawa; Kenichi Okazaki; Masayuki Sakakura; Takuya Matsuo; Yosuke Kanzaki; Hiroshi Matsukizono; Yoshitaka Yamamoto - Web page: https://patentgrep.com/patent/US8785926B2 ## CPC - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like. ## Claims ### Claim 1 A semiconductor device comprising: a gate electrode; a gate insulating film over the gate electrode; and an oxide semiconductor film over the gate insulating film, wherein the oxide semiconductor film overlaps with the gate electrode, wherein the oxide semiconductor film comprises a side surface which overlaps with the gate electrode, and wherein at least part of the side surface comprises an uneven shape. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the whole of the side surface of the oxide semiconductor film is a high resistance region, and wherein the high resistance region comprises at least one of a corrugated side surface, a waved side surface, a jagged side surface, and a side surface where a projected portion and a depressed portion are alternately arranged. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor film is a film comprising an oxide of one or more elements selected from indium, zinc, gallium, and tin. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises a crystal portion where a c-axis is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. ### Claim 5 A semiconductor device comprising: a gate electrode; an oxide semiconductor film comprising a channel region; and a source electrode and a drain electrode, wherein the channel region is positioned between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface, wherein the oxide semiconductor film comprises a side surface which overlaps with the gate electrode, wherein the side surface of the oxide semiconductor film comprises a first high resistance region positioned between a first region nearest to one end of the first side surface and a second region nearest to one end of the second side surface, and wherein the first high resistance region comprises at least one of a corrugated side surface, a waved side surface, a jagged side surface, and a side surface where a projected portion and a depressed portion are alternately arranged. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, wherein the side surface of the oxide semiconductor film comprises a second high resistance region positioned between a third region nearest to the other end of the first side surface and a fourth region nearest to the other end of the second side surface, and wherein the second high resistance region comprises at least one of a corrugated side surface, a waved side surface, a jagged side surface, and a side surface where a projected portion and a depressed portion are alternately arranged. ### Claim 7 (depends on 5) The semiconductor device according to claim 5, wherein the first high resistance region is continuous from the first region to the second region. ### Claim 8 (depends on 6) The semiconductor device according to claim 6, wherein the second high resistance region is continuous from the third region to the fourth region. ### Claim 9 (depends on 5) The semiconductor device according to claim 5, wherein the whole of the side surface of the oxide semiconductor film is a high resistance region, and wherein the high resistance region comprises at least one of a corrugated side surface, a waved side surface, a jagged side surface, and a side surface where a projected portion and a depressed portion are alternately arranged. ### Claim 10 (depends on 5) The semiconductor device according to claim 5, wherein the oxide semiconductor film is a film comprising an oxide of one or more elements selected from indium, zinc, gallium, and tin. ### Claim 11 (depends on 5) The semiconductor device according to claim 5, wherein the oxide semiconductor film comprises a crystal portion where a c-axis is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. ### Claim 12 A semiconductor device comprising: a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film, the oxide semiconductor film comprising a channel region; and a source electrode and a drain electrode each electrically connected to the oxide semiconductor film, wherein the channel region is positioned between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface, wherein the oxide semiconductor film comprises a side surface which overlaps with the gate electrode, wherein the side surface of the oxide semiconductor film comprises a first high resistance region positioned between a first region nearest to one end of the first side surface and a second region nearest to one end of the second side surface, and wherein the first high resistance region comprises at least one of a corrugated side surface, a waved side surface, a jagged side surface, and a side surface where a projected portion and a depressed portion are alternately arranged. ### Claim 13 (depends on 12) The semiconductor device according to claim 12, wherein the side surface of the oxide semiconductor film comprises a second high resistance region positioned between a third region nearest to the other end of the first side surface and a fourth region nearest to the other end of the second side surface, and wherein the second high resistance region comprises at least one of a corrugated side surface, a waved side surface, a jagged side surface, and a side surface where a projected portion and a depressed portion are alternately arranged. ### Claim 14 (depends on 12) The semiconductor device according to claim 12, wherein the first high resistance region is continuous from the first region to the second region. ### Claim 15 (depends on 13) The semiconductor device according to claim 13, wherein the second high resistance region is continuous from the third region to the fourth region. ### Claim 16 (depends on 12) The semiconductor device according to claim 12, wherein the whole of the side surface of the oxide semiconductor film is a high resistance region, and wherein the high resistance region comprises at least one of a corrugated side surface, a waved side surface, a jagged side surface, and a side surface where a projected portion and a depressed portion are alternately arranged. ### Claim 17 (depends on 12) The semiconductor device according to claim 12, wherein the oxide semiconductor film is a film comprising an oxide of one or more elements selected from indium, zinc, gallium, and tin. ### Claim 18 (depends on 12) The semiconductor device according to claim 12, wherein the oxide semiconductor film comprises a crystal portion where a c-axis is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed.