# US 8,785,922 B2 · Thin film transistor, organic luminescence display including the same, and method of manufacturing the organic luminescence display

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- Number: US 8,785,922 B2
- Document ID: US8785922B2
- Status: Granted
- Kind: B2
- Application number: 13/415,776
- Filed: 2012-03-08
- Published: 2012-10-11
- Granted: 2014-07-22
- Earliest claimed: 2011-04-06
- Assignees: Samsung Display Co., Ltd.
- Applicants: Hui-Won Yang; Eun-Hyun Kim
- Inventors: Hui-Won Yang; Eun-Hyun Kim
- Web page: https://patentgrep.com/patent/US8785922B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6729: {characterised by the electrodes}
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10K 59/1213: {the pixel elements being TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A thin film transistor (TFT) including a substrate; a gate electrode formed over the substrate, an active layer insulated from the gate electrode by using a gate insulation film; an etch stop layer which is formed over the active layer and includes first and second holes for exposing the active layer; a first electrode; and a second electrode including a first part and a second part. The first part is formed over the etch stop layer, and the second part is received in the second hole, contacts the active layer directly, and connects the first part to the active layer. At least one portion of the first part of the second electrode overlaps with the gate electrode. The second part of the second electrode does not overlap with and is separated from the gate electrode.

## Claims

### Claim 1

A thin film transistor (TFT) comprising:
a substrate;
a gate electrode formed over the substrate;
an active layer insulated from the gate electrode by using a gate insulation film;
an etch stop layer which is formed over the active layer and comprises a first hole and a second hole for exposing the active layer;
a first electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second part is received in the first hole, contacts the active layer directly, and connects the first part to the active layer; and
a second electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second part is received in the second hole, contacts the active layer directly, and connects the first part to the active layer,
wherein at least one portion of the first part of the first electrode and the second part of the first electrode overlap with the gate electrode,
at least one portion of the first part of the second electrode overlaps with the gate electrode, and
the second part of the second electrode does not overlap with and is separated from the gate electrode.

### Claim 2 (depends on 1)

The TFT of claim 1, wherein both the first and the second electrodes overlap with the active layer.

### Claim 3 (depends on 1)

The TFT of claim 1, wherein the first hole is formed to overlap with the gate electrode, and
the second hole is formed not to overlap with and is separated from the gate electrode.

### Claim 4 (depends on 1)

The TFT of claim 1, wherein the active layer comprises an oxide semiconductor.

### Claim 5 (depends on 4)

The TFT of claim 4, wherein the oxide semiconductor comprises at least one selected from the group consisting of indium (In), gallium (Ga), stanium (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), zinc (Zn), and a combination thereof

### Claim 6 (depends on 1)

The TFT of claim 1, wherein the active layer is configured to form a back channel at a region of the active layer which overlaps with the first part of the second electrode but does not overlap with the gate electrode.

### Claim 7

An organic luminescence display comprising:
a substrate;
a gate electrode formed over the substrate;
an active layer insulated from the gate electrode by using a gate insulation film;
an etch stop layer which is formed over the active layer and comprises a first hole and a second hole for exposing the active layer;
a first electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second part is received in the first hole, contacts the active layer directly, and connects the first part to the active layer;
a second electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second part is received in the second hole, contacts the active layer directly, and connects the first part to the active layer;
a pixel electrode connected to either the first electrode or the second electrode;
an opposite electrode facing the pixel electrode;
an organic luminescence layer formed between the pixel electrode and the opposite electrode,
wherein at least one portion of the first part of the first electrode and the second part of the first electrode overlap with the gate electrode,
at least one portion of the first part of the second electrode overlaps with the gate electrode, and
the second part of the second electrode does not overlap with and is separated from the gate electrode.

### Claim 8 (depends on 7)

The organic luminescence display of claim 7, wherein both the first electrode and the second electrode overlap with the active layer.

### Claim 9 (depends on 7)

The organic luminescence display of claim 7, wherein the first hole is formed to overlap with the gate electrode, and
the second hole is formed not to overlap with and is separated from the gate electrode.

### Claim 10 (depends on 7)

The organic luminescence display of claim 7, wherein the active layer comprises an oxide semiconductor.

### Claim 11 (depends on 7)

The organic luminescence display of claim 7, wherein the oxide semiconductor comprises at least one selected from the group consisting of indium (In), gallium (Ga), stanium (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), zinc (Zn), and a combination thereof

### Claim 12 (depends on 7)

The organic luminescence display of claim 7, wherein the active layer is configured to form a back channel at a region of the active layer which overlaps with the first part of the second electrode but does not overlap with the gate electrode.

### Claim 13

A method of manufacturing an organic luminescence display, the method comprising:
providing a substrate;
forming a gate electrode over the substrate;
forming an active layer which is insulated from the gate electrode by a gate insulation film;
forming an etch stop layer over the active layer, the etch stop layer comprising a first hole and a second hole for exposing the active layer;
forming a first electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second part which is received in the first hole, contacts the active layer directly, and connects the first part to the active layer;
forming a second electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second portion is received in the second hole, contacts the active layer directly, and connects the first part to the active layer;
forming a pixel electrode connected to either the first electrode or the second electrode;
forming an opposite electrode facing the pixel electrode; and
forming an organic luminescence layer between the pixel electrode and the opposite electrode,
wherein at least one portion of the first part of the first electrode and the second part of the first electrode overlap with the gate electrode,
the first part of the second electrode at least partially overlaps with the gate electrode, and
the second part of the second electrode does not overlap with and is separated from the gate electrode.

### Claim 14 (depends on 13)

The method of claim 13, wherein both the first electrode and the second electrode overlap with the active layer.

### Claim 15 (depends on 13)

The method of claim 13, wherein the first hole is formed to overlap with the gate electrode, and the second hole is formed not to overlap with and is separated from the gate electrode.

### Claim 16 (depends on 13)

The method of claim 13, wherein the active layer comprises an oxide semiconductor.

### Claim 17 (depends on 13)

The method of claim 13, wherein the oxide semiconductor comprises at least one selected from the group consisting of indium (In), gallium (Ga), stanium (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), zinc (Zn), and a combination thereof

### Claim 18 (depends on 13)

The method of claim 13, further comprising forming a buffer layer between the substrate and the gate electrode.