# US 8,785,919 B2 · Semiconductor device and method of manufacturing same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,919 B2 - Document ID: US8785919B2 - Status: Granted - Kind: B2 - Application number: 14/147,169 - Filed: 2014-01-03 - Published: 2014-05-15 - Granted: 2014-07-22 - Earliest claimed: 2002-04-24 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki; Satoshi Seo; Hideaki Kuwabara - Web page: https://patentgrep.com/patent/US8785919B2 ## CPC - H10K 59/35: comprising red-green-blue [RGB] subpixels - G01J 1/4228: {arrangements with two or more detectors, e.g. for sensitivity compensation} - H10H 20/062: {Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors} - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/122: Pixel-defining structures or layers, e.g. banks - H10K 59/124: Insulating layers formed between TFT elements and OLED elements - H10K 59/131: Interconnections, e.g. wiring lines or terminals - H10K 59/30: Devices specially adapted for multicolour light emission - H10K 59/38: comprising colour filters or colour changing media [CCM] - H10K 59/80515: {characterised by their shape} - H10K 59/80518: {Reflective anodes, e.g. ITO combined with thick metallic layers} - H10K 59/80524: {Transparent cathodes, e.g. comprising thin metal layers} - H10K 59/878: {comprising reflective means} - H10K 77/10: Substrates, e.g. flexible substrates - H10W 90/00: Package configurations - H10K 59/1201: {Manufacture or treatment} - H10K 59/80522: {combined with auxiliary electrodes} - H10K 59/8794: {Arrangements for heating and cooling} - H10K 2102/3026: {Top emission} - Y02E 10/549: Organic PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction. ## Claims ### Claim 1 A display device comprising: a single crystal semiconductor substrate; a pixel portion comprising a plurality of pixels; a driver circuit of the pixel portion; a controller circuit; and a D/A converter, wherein each of the plurality of pixels comprises: a transistor comprising a channel formation region; a first insulating layer over the transistor; a first electrode over the first insulating layer; a second insulating layer covering a peripheral portion of the first electrode; a layer comprising an organic material over the first electrode and the second insulating layer; and a second electrode over the layer comprising the organic material, wherein a source or a drain of the transistor is electrically connected to the first electrode, wherein a thickness of the first electrode in a region covered by the second insulating layer is larger than a thickness of the first electrode in a region exposed from the second insulating layer, and wherein the channel formation region is in the single crystal semiconductor substrate, and wherein the driver circuit, the controller circuit and the D/A converter are fabricated on the single crystal semiconductor substrate. ### Claim 2 (depends on 1) The display device according to claim 1, wherein the first electrode has a stacked structure of a layer containing titanium and a layer containing aluminum. ### Claim 3 (depends on 1) The display device according to claim 1, wherein the layer comprising the organic material is capable of emitting white light. ### Claim 4 (depends on 2) The display device according to claim 2, further comprising: a light-transmitting substrate over the second electrode and a colored layer on the light-transmitting substrate. ### Claim 5 (depends on 1) The display device according to claim 1, further comprising: at least one of a correction circuit, a memory, a power source circuit and a CPU which are fabricated on the single crystal semiconductor substrate. ### Claim 6 (depends on 1) A display module comprising the display device according to claim 1 and a FPC bonded to the single crystal semiconductor substrate. ### Claim 7 (depends on 6) An electronic equipment comprising the display module according to claim 6, wherein the electronic equipment is one selected from the group consisting of a video camera, a digital camera, a head-mount display, a car navigation, a DVD player, an electronic game equipment, a portable information terminal and a personal computer. ### Claim 8 A display device comprising: a single crystal semiconductor substrate; a pixel portion comprising a plurality of pixels; a driver circuit of the pixel portion; a controller circuit; and a D/A converter, wherein each of the plurality of pixels comprises: a transistor comprising a channel formation region; a first insulating layer over the transistor; a first electrode over the first insulating layer and having a depression portion; a second insulating layer covering the first electrode except the depression portion; a layer comprising an organic material over the first electrode and the second insulating layer; and a second electrode over the layer comprising the organic material, wherein the first electrode has a stacked structure of a layer containing titanium and a layer containing aluminum, wherein the layer containing aluminum is in contact with the layer comprising the organic material in the depression portion, wherein the channel formation region of the transistor is in the single crystal semiconductor substrate, and wherein a source or a drain of the transistor is electrically connected to the first electrode, and wherein the driver circuit, the controller circuit and the D/A converter are fabricated on the single crystal semiconductor substrate. ### Claim 9 (depends on 8) The display device according to claim 8, wherein the layer comprising the organic material is capable of emitting white light. ### Claim 10 (depends on 9) The display device according to claim 9, further comprising a light-transmitting substrate over the second electrode and a colored layer on the light-transmitting substrate. ### Claim 11 (depends on 8) The display device according to claim 8, further comprising at least one of a correction circuit, a memory, a power source circuit and a CPU which are fabricated on the single crystal semiconductor substrate. ### Claim 12 (depends on 8) A display module comprising the display device according to claim 8 and a FPC bonded to the single crystal semiconductor substrate. ### Claim 13 (depends on 12) An electronic equipment comprising the display module according to claim 12, wherein the electronic equipment is one selected from the group consisting of a video camera, a digital camera, a head-mount display, a car navigation, a DVD player, an electronic game equipment, a portable information terminal and a personal computer. ### Claim 14 A display device comprising: a single crystal semiconductor substrate; a pixel portion comprising a plurality of pixels; a driver circuit of the pixel portion; a controller circuit; and a D/A converter, wherein each of the plurality of pixels comprises: a first transistor comprising a first channel formation region; a second transistor comprising a second channel formation region; a first insulating layer over the first transistor and the second transistor; a first electrode over the first insulating layer; a second insulating layer covering a peripheral portion of the first electrode; a layer comprising an organic material over the first electrode and the second insulating layer; and a second electrode over the layer comprising the organic material, wherein a thickness of the first electrode in a region covered by the second insulating layer is larger than a thickness of the first electrode in a region exposed from the second insulating layer, wherein the first channel formation region and the second channel formation region are in the single crystal semiconductor substrate, wherein a source or a drain of the first transistor is electrically connected to a gate of the second transistor, and wherein a source or a drain of the second transistor is electrically connected to the first electrode, and wherein the driver circuit, the controller circuit and the D/A converter are fabricated on the single crystal semiconductor substrate. ### Claim 15 (depends on 14) The display device according to claim 14, wherein the driver circuit comprises a third transistor comprising a third channel formation region, and wherein the third channel formation region is provided in the single crystal semiconductor substrate. ### Claim 16 (depends on 14) The display device according to claim 14, wherein the first electrode has a stacked structure of a layer containing titanium and a layer containing aluminum. ### Claim 17 (depends on 14) The display device according to claim 14, wherein the layer comprising the organic material is capable of emitting white light. ### Claim 18 (depends on 17) The display device according to claim 17, further comprising a light-transmitting substrate over the second electrode and a colored layer on the light-transmitting substrate. ### Claim 19 (depends on 14) The display device according to claim 14, further comprising at least one of a correction circuit, a memory, a power source circuit and a CPU which are fabricated on the single crystal semiconductor substrate. ### Claim 20 (depends on 14) A display module comprising the display device according to claim 14 and a FPC bonded to the single crystal semiconductor substrate. ### Claim 21 (depends on 20) An electronic equipment comprising the display module according to claim 20, wherein the electronic equipment is one selected from the group consisting of a video camera, a digital camera, a head-mount display, a car navigation, a DVD player, an electronic game equipment, a portable information terminal and a personal computer.