# US 8,785,913 B2 · Buffer bilayers for electronic devices

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- Number: US 8,785,913 B2
- Document ID: US8785913B2
- Status: Granted
- Kind: B2
- Application number: 12/645,647
- Filed: 2009-12-23
- Published: 2010-08-19
- Granted: 2014-07-22
- Earliest claimed: 2008-12-27
- Assignees: E. I. Du Pont de Nemours and Company
- Applicants: Che-Hsiung Hsu; Chi Zhang
- Inventors: Che-Hsiung Hsu; Chi Zhang
- Web page: https://patentgrep.com/patent/US8785913B2

## CPC

- H10K 71/30: Doping active layers, e.g. electron transporting layers
- H10K 85/1135: {Polyethylene dioxythiophene [PEDOT]; Derivatives thereof}
- H10K 50/17: Carrier injection layers
- H10K 2102/103: {comprising indium oxides, e.g. ITO}
- Y10T 428/265: 1 mil or less
- Y10T 428/3154: Of fluorinated addition polymer from unsaturated monomers
- Y10T 428/31544: Addition polymer is perhalogenated
- Y10T 428/31678: Of metal
- Y10T 428/31692: Next to addition polymer from unsaturated monomers
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer which is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.

## Claims

### Claim 1

A buffer bilayer consisting of:
a first layer comprising (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer, and
a second layer consisting of a reacted layer of a metal, wherein the metal is selected from the group consisting of transition metals, Group 13 metals, Group 14 metals, and lanthanide metals.

### Claim 2 (depends on 1)

The bilayer of claim 1, wherein the electrically conductive polymer is selected from the group consisting of a polyaniline, a polythiophene, a poly(selenophene), a poly(tellurophene), a polypyrrole, a poly(4-amino-indole), a poly(7-amino-indole), a polymeric fused polycyclic heteroaromatic, copolymers thereof, and combinations thereof.

### Claim 3 (depends on 2)

The bilayer of claim 2, wherein the electrically conductive polymer is selected from the group consisting of unsubstituted polyaniline, poly(3,4-ethylenedioxythiophene), poly(3,4-ethyleneoxythiathiophene), poly(3,4-ethylenedithiathiophene), unsubstituted polypyrrole, poly(thieno(2,3-b)thiophene), poly(thieno(3,2-b)thiophene), and poly(thieno(3,4-b)thiophene).

### Claim 4 (depends on 1)

The bilayer of claim 1, wherein the non-fluorinated polymeric acid is selected from the group consisting of polystyrene sulfonic acid, poly(2-acrylamido-2-methyl-1-propanesulfonic acid), and mixtures thereof.

### Claim 5 (depends on 1)

The bilayer of claim 1, wherein the highly-fluorinated acid polymer is at least 95% fluorinated.

### Claim 6 (depends on 1)

The bilayer of claim 1, wherein the highly-fluorinated acid polymer is selected from a sulfonic acid and a sulfonimide.

### Claim 7 (depends on 1)

The bilayer of claim 1, wherein the highly-fluorinated acid polymer is a perfluoroolefin having perfluoro-ether-sulfonic acid side chains.

### Claim 8 (depends on 1)

The bilayer of claim 1, wherein the highly-fluorinated acid polymer is selected from the group consisting of a copolymer of 1,1-difluoroethylene and 2-(1,1-difluoro-2-(trifluoromethyl)allyloxy)-1,1,2,2-tetrafluoroethanesulfonic acid and a copolymer of ethylene and 2-(2-(1,2,2-trifluorovinyloxy)-1,1,2,3,3,3-hexafluoropropoxy)-1,1,2,2-tetrafluoroethanesulfonic acid.

### Claim 9 (depends on 1)

The bilayer of claim 1, wherein the highly-fluorinated acid polymer is selected from a copolymer of tetrafluoroethylene and perfluoro(3,6-dioxa-4-methyl-7-octenesulfonic acid), and a copolymer of tetrafluoroethylene and perfluoro(3-oxa-4-pentenesulfonic acid).

### Claim 10 (depends on 1)

The bilayer of claim 1, wherein the metal is selected from the group consisting of aluminum, molybdenum, vanadium, indium, tin, and lanthanide metals.

### Claim 11 (depends on 10)

The bilayer of claim 10, wherein the metal is selected from the group consisting of lanthanide metals.

### Claim 12 (depends on 11)

The bilayer of claim 11, wherein the metal is selected from the group consisting of Nd, Pm, Sm, Eu, Tb, and Tm.

### Claim 13 (depends on 1)

The bilayer of claim 1, wherein the metal is selected from the group consisting of Al, Mo, and Sm.

### Claim 14 (depends on 1)

The bilayer of claim 1, wherein the second layer has a thickness of no greater than 20 nm.

### Claim 15 (depends on 1)

The bilayer of claim 1, wherein the second layer has a thickness no greater than 10 nm.

### Claim 16 (depends on 1)

The bilayer of claim 1, wherein the second layer has a thickness of 0.1 to 5 nm.