# US 8,785,904 B2 · Light-emitting device with low forward voltage and method for fabricating the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,904 B2 - Document ID: US8785904B2 - Status: Granted - Kind: B2 - Application number: 13/090,899 - Filed: 2011-04-20 - Published: 2012-10-25 - Granted: 2014-07-22 - Earliest claimed: 2011-04-20 - Assignees: Invenlux Corporation - Applicants: Jianping Zhang; Hongmei Wang; Chunhui Yan - Inventors: Jianping Zhang; Hongmei Wang; Chunhui Yan - Web page: https://patentgrep.com/patent/US8785904B2 ## CPC - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/8314: {extending at least partially onto an outer side surface of the bodies} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light emitting device with reduced forward voltage Vf by utilizing the excellent lateral conduction of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) structure and, more specifically, by improving the vertical conduction of 2DEG and 2DHG structure by means of vertical conductive passages formed in 2DEG and 2DHG structure. The conductive passages are formed via discontinuities in 2DEG and 2DHG structure. The discontinuities can be in the form of openings by etching 2DEG or 2DHG structure, or in the form of voids by growing 2DEG or 2DHG structure on a rough surface via epitaxy facet control. The discontinuities can be formed by vertical displacement of 2DEG structure. A method is provided for manufacturing a light emitting device with reduced forward voltage same. ## Claims ### Claim 1 A light-emitting device comprising: a two-dimensional electron gas (2DEG) structure; an n-type layer formed on the two-dimensional electron gas structure; a p-type layer; an active region sandwiched between the n-type layer and the p-type layer; a p-contact electrically connected to the p-type layer; and an n-contact electrically connected to the n-type layer, wherein the n-type layer has a stepped structure with an upper step surface and a lower step surface being connected by a sidewall, and the n-contact is conformably formed on the upper step surface, the lower step surface and the sidewall of the stepped structure of the n-type layer; wherein the two-dimensional electron gas structure comprises one or more pairs of n-type GaN layers and n-type AlGaN layers, each of the one of more pairs of n-type GaN layer and n-type AlGaN layer is so selected that an interface thereof defines a 2DEG channel, thus the one or more pairs of n-type GaN layers and n-type AlGaN layers form one or more 2DEG channels, a plurality of discontinuities are formed in the two-dimensional electron gas structure exposing the one or more 2DEG channels, and the n-type layer is formed on the two-dimensional electron gas structure and in electrical contact with the one or more 2DEG channels through the plurality of discontinuities. ### Claim 2 (depends on 1) The light-emitting device of claim 1, wherein the n-type layer fills the plurality of discontinuities and is in direct contact with the one or more 2DEG channels. ### Claim 3 (depends on 1) The light-emitting device of claim 1, wherein the one or more n-type AlGaN layers of the two-dimensional electron gas structure are Si-doped AlGaN layers and have a composition of AlxGa1-xN, where 0.10≦x≦0.40. ### Claim 4 (depends on 1) The light-emitting device of claim 1, wherein the one or more n-type GaN layers of the two-dimensional electron gas structure are made of Si-doped GaN. ### Claim 5 (depends on 1) The light-emitting device of claim 1, wherein the n-type layer is made of Si-doped GaN, or Si-doped InyGa1-yN where 0.01≦y≦0.10, or Si-doped AlxGa1-xN, where 0.01≦x≦0.10. ### Claim 6 (depends on 1) The light-emitting device of claim 1, wherein the one or more 2DEG channels have a sheet electron density more than 1013 cm−2. ### Claim 7 (depends on 1) The light-emitting device of claim 1, wherein the plurality of discontinuities are in the form of openings formed in the two-dimensional electron gas structure and exposing at least one 2DEG channel. ### Claim 8 (depends on 1) The light-emitting device of claim 1, wherein the plurality of discontinuities are in the form of voids formed in the two-dimensional electron gas structure by growing the two-dimensional electron gas structure on a rough surface via epitaxy facet control and the voids expose at least one 2DEG channel. ### Claim 9 (depends on 1) The light-emitting device of claim 1, further comprising: a p-type protection layer formed on the active region; and a two-dimensional hole gas (2DHG) structure formed on the p-type protection layer, wherein the two-dimensional hole gas structure comprises one or more pairs of p-type GaN layers and p-type AlGaN layers, each of the one of more pairs of p-type GaN layer and p-type AlGaN layer is so selected that an interface thereof defines a 2DHG channel, thus the one or more pairs of p-type GaN layers and p-type AlGaN layers form one or more 2DHG channels, and a plurality of openings are formed in the two-dimensional hole gas structure exposing the one or more 2DHG channels and the p-type protection layer, and the p-type layer is formed on the two-dimensional hole gas structure filling the plurality of openings so as to electrically connect the one or more 2DHG channels to the p-type protection layer through the plurality of openings. ### Claim 10 (depends on 9) The light-emitting device of claim 9, wherein the one or more p-type AlGaN layers of the two-dimensional hole gas structure are made of Mg-doped AlGaN, and have a composition of AlxGa1-xN, where 0.10≦x≦0.30. ### Claim 11 (depends on 9) The light-emitting device of claim 9, wherein the one or more 2DHG channels have a sheet hole density more than 1013 cm−2. ### Claim 12 (depends on 1) The light-emitting device of claim 1, further comprising a conductive layer partially or fully filling the plurality of discontinuities and in direct contact with the one or more 2DEG channels, wherein the conductive layer has a higher conductivity than the n-type layer, and the n-type layer is electrically connected to the one or more 2DEG channels through the conductive layer. ### Claim 13 (depends on 12) The light-emitting device of claim 12, wherein the conductive layer is made of Titanium nitride, Zirconium nitride, Hafnium nitride, Vanadium nitride, Niobium nitride, Tantalum nitride, Scandium nitride, Yttrium nitride, Chromium nitride, Molybdenum nitride, or Tungsten nitride.