# US 8,785,899 B2 · Nonvolatile stacked memory structure with a resistance change film between a vertical electrode and horizontal electrodes > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,899 B2 - Document ID: US8785899B2 - Status: Granted - Kind: B2 - Application number: 13/587,375 - Filed: 2012-08-16 - Published: 2013-08-08 - Granted: 2014-07-22 - Earliest claimed: 2012-02-07 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Hyun-Su Ju; Min-Kyu Yang; Eun-Mi Kim; Seong-Geon Park - Inventors: Hyun-Su Ju; Min-Kyu Yang; Eun-Mi Kim; Seong-Geon Park - Web page: https://patentgrep.com/patent/US8785899B2 ## CPC - H10N 70/841: {Electrodes} - H10B 63/845: {the switching components being connected to a common vertical conductor} - H10N 70/24: {based on migration or redistribution of ionic species, e.g. anions, vacancies} - H10N 70/823: {adapted for essentially horizontal current flow, e.g. bridge type devices} - H10N 70/8833: {Binary metal oxides, e.g. TaOx} - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10B: ELECTRONIC MEMORY DEVICES ## Abstract According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film. ## Claims ### Claim 1 A nonvolatile memory device comprising: a plurality of first interlayer insulating films and a plurality of first electrodes stacked alternately; a second electrode penetrating the plurality of first interlayer insulating films and the plurality of first electrodes, the plurality of first electrodes and the second electrode having a work function difference of 0.5 to 6.0 eV; and a resistance change film between the plurality of first electrodes and the second electrode, wherein no memory cell selection elements are between the plurality of first electrodes and the resistance change film, and no memory cell selection elements are between the second electrode and the resistance change film. ### Claim 2 (depends on 1) The nonvolatile memory device of claim 1, wherein the plurality of first electrodes and the second electrode contain metal. ### Claim 3 (depends on 2) The nonvolatile memory device of claim 2, wherein the plurality of first electrodes contain one of Ti and TiN, and the second electrode contains one of Pt and Ru. ### Claim 4 (depends on 1) The nonvolatile memory device of claim 1, wherein the plurality of first electrodes contains a metal, and the second electrode contains a semiconductor material. ### Claim 5 (depends on 4) The nonvolatile memory device of claim 4, wherein the plurality of first electrodes contain one of Ti and TiN, and the second electrode contains doped-Si. ### Claim 6 (depends on 1) The nonvolatile memory device of claim 1, wherein the resistance change film is configured to be maintained in at least one of a low-resistance state and a high-resistance state when a voltage corresponding to read level is applied to the second electrode and one of the plurality of first electrodes, in the low-resistance state, a current flowing through the resistance change film changes by a first amount according to a change in the voltage applied to second electrode and one of the plurality of first electrodes, and in the high-resistance state, the current flowing through the resistance change film changes by a second amount, which is smaller than the first amount, according to the change in the voltage applied to second electrode and one of the plurality of first electrodes, the resistance change film is configured to be maintained in an inhibit state when a voltage corresponding to an inhibit level is applied to the second electrode and one of the plurality of first electrodes, and in the inhibit state, the current flowing through the resistance change film changes by a third amount, which is smaller than the second amount, according to the change in the voltage applied to the second electrode and one of the plurality of first electrodes, and a magnitude of the inhibit level is different than a magnitude of the read level. ### Claim 7 A nonvolatile memory device comprising: at least one stacked structure including, 1 to N first electrodes spaced apart in a vertical direction, N being an integer greater than 1, a second electrode extending vertically through the 1 to N first electrodes, a resistive change film between the 1 to N first electrodes and the second electrode, the resistive change film containing oxygen ions, and a first barrier film between the resistive change film and the second electrode. ### Claim 8 (depends on 7) The nonvolatile memory device of claim 7, wherein each of the at least one stacked structure further includes: 1 to N Schottky barriers defined by 1 to N interfaces between the 1 to N first electrodes and the resistive change film. ### Claim 9 (depends on 7) The nonvolatile memory device of claim 7, wherein each of the at least one stacked structure further includes a second barrier pattern between the 1 to N first electrodes and the resistive change film, and at least one of the first barrier film and the second barrier pattern is configured to reduce the outflow of oxygen ions from the resistive change film. ### Claim 10 (depends on 7) The nonvolatile memory device of claim 7, wherein the resistance change film is configured to be maintained in at least one of a low-resistance state and a high-resistance state when a voltage corresponding to read level is applied to the second electrode and one of the 1 to N first electrodes, in the low-resistance state, a current flowing through the resistance change film changes by a first amount according to a change in the voltage applied to second electrode and one of the 1 to N first electrodes, and in the high-resistance state, the current flowing through the resistance change film changes by a second amount, which is smaller than the first amount, according to the change in the voltage applied to second electrode and one of the 1 to N first electrodes, and the resistance change film is configured to be maintained in an inhibit state when a voltage corresponding to an inhibit level is applied to the second electrode and one of the 1 to N first electrodes, and in the inhibit state, the current flowing through the resistance change film changes by a third amount, which is smaller than the second amount, according to the change in the voltage applied to the second electrode and one of the 1 to N first electrodes, and a magnitude of the inhibit level is different than a magnitude of the read level. ### Claim 11 (depends on 7) The nonvolatile memory device of claim 7, further comprising: a controller connected to the nonvolatile memory device. ### Claim 12 (depends on 1) The nonvolatile memory device of claim 1, wherein the resistance change film surrounds the second electrode and extends vertically through the plurality of first interlaying insulating films and the plurality of first electrodes. ### Claim 13 (depends on 1) The nonvolatile memory device of claim 1, further comprising: a barrier layer film between the resistive change film and the second electrode, wherein a plurality of nonvolatile memory cells are defined along the second electrode with each one of the plurality of nonvolatile memory cells being defined by a portion of the resistive change film and a portion of the barrier layer film between a corresponding portion of the second electrode and a corresponding one of the plurality of first electrodes. ### Claim 14 (depends on 7) The nonvolatile memory device of claim 7, wherein the resistance change film surrounds the second electrode and extends vertically through the 1 to N first electrodes. ### Claim 15 (depends on 7) The nonvolatile memory device of claim 7, wherein a plurality of nonvolatile memory cells are defined along the second electrode with each one of the plurality of nonvolatile memory cells being defined by a portion of the resistive change film and a portion of the first barrier film between a corresponding portion of the second electrode and a corresponding one of 1 to N first electrodes.