# US 8,785,889 B2 · Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,889 B2 - Document ID: US8785889B2 - Status: Granted - Kind: B2 - Application number: 13/840,961 - Filed: 2013-03-15 - Published: 2013-08-15 - Granted: 2014-07-22 - Earliest claimed: 2010-02-26 - Assignees: Advanced Technology Materials, Inc. - Applicants: Advanced Technology Materials, Inc. - Inventors: Robert Kaim; Joseph D. Sweeney; Anthony M. Avila; Richard S. Ray - Web page: https://patentgrep.com/patent/US8785889B2 ## CPC - H10P 32/19: {Diffusion sources} - F17C 7/00: Methods or apparatus for discharging liquefied, solidified, or compressed gases from pressure vessels, not covered by another subclass - H01J 37/08: Ion sources; Ion guns - H01J 37/3002: {Details} - H01J 37/3171: {for ion implantation} - H10P 30/204: {into Group IV semiconductors} - H10P 30/208: {of electrically inactive species} - H10P 32/12: between a solid phase and a gaseous phase - H10P 32/171: {being group IV material} - H01J 2237/022: Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube - H01J 2237/304: Controlling tubes - Y02E 60/32: Hydrogen storage - Y10T 428/13: Hollow or container type article [e.g., tube, vase, etc.] - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - F17C: VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES (storing fluids in natural or artificial cavities or chambers in the earth B65G5/00; construction or assembling of bulk storage containers employing civil-engineering techniques E04H7/00; variable-capacity gas-holders F17B; liquefaction or refrigeration machines, plants, or systems F25) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement. ## Claims ### Claim 1 A gas supply kit for an ion implantation system, comprising (i) a first gas storage and dispensing vessel holding a germanium dopant source gas, and (ii) a second gas storage and dispensing vessel holding a supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein at least one of the dopant gas and, when present, a co-species gas, is isotopically enriched above natural abundance level in at least one germanium isotope. ### Claim 2 (depends on 1) The gas supply kit of claim 1, wherein the isotopically enriched gas is isotopically enriched above natural abundance level of at least one germanium isotope of mass 70, 72, 73, 74 or 76. ### Claim 3 (depends on 1) The gas supply kit of claim 1, wherein the isotopically enriched gas is isotopically enriched above natural abundance level of at least one germanium isotope of mass 72. ### Claim 4 (depends on 1) The gas supply kit of claim 1, wherein the germanium dopant source gas comprises germanium tetrafluoride. ### Claim 5 (depends on 4) The gas supply kit of claim 4, wherein said germanium tetrafluoride is isotopically enriched above natural abundance level of at least one germanium isotope of mass 72. ### Claim 6 (depends on 4) The gas supply kit of claim 4, wherein the supplemental gas comprises a co-species gas. ### Claim 7 (depends on 6) The gas supply kit of claim 6, wherein said co-species gas comprises germane. ### Claim 8 (depends on 1) The gas supply kit of claim 1, wherein the supplemental gas comprises gas selected from the group consisting of argon, fluorine, nitrogen, helium, ammonia, xenon, hydrogen, and germane. ### Claim 9 (depends on 4) The gas supply kit of claim 4, wherein the supplemental gas comprises gas selected from the group consisting of argon, fluorine, nitrogen, helium, ammonia, xenon, hydrogen, and germane. ### Claim 10 (depends on 1) The gas supply kit of claim 1, wherein the first and second gas storage and dispensing vessels comprise at least one vessel containing a sorbent medium for adsorption storage and desorption dispensing of gas. ### Claim 11 (depends on 1) The gas supply kit of claim 1, wherein the first and second gas storage and dispensing vessels comprise at least one vessel that is internally pressure-regulated. ### Claim 12 A method for enhancing operation of an ion implantation system, comprising providing for use in the ion implantation system (i) a first gas storage and dispensing vessel holding a germanium dopant source gas, and (ii) a second gas storage and dispensing vessel holding a supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein at least one of the dopant gas and, when present, a co-species gas, is isotopically enriched above natural abundance level in at least one germanium isotope. ### Claim 13 (depends on 12) The method of claim 12, wherein the isotopically enriched gas is isotopically enriched above natural abundance level of at least one germanium isotope of mass 70, 72, 73, 74 or 76. ### Claim 14 (depends on 12) A method of claim 12, wherein the isotopically enriched gas is isotopically enriched above natural abundance level of at least one germanium isotope of mass 72. ### Claim 15 (depends on 12) The method of claim 12, wherein the germanium dopant source gas comprises germanium tetrafluoride. ### Claim 16 (depends on 15) The method of claim 15, wherein said germanium tetrafluoride is isotopically enriched above natural abundance level of at least one germanium isotope of mass 72. ### Claim 17 (depends on 15) The method of claim 15, wherein the supplemental gas comprises a co-species gas. ### Claim 18 (depends on 17) The method of claim 17, wherein said co-species gas comprises germane. ### Claim 19 (depends on 12) The method of claim 12, wherein the supplemental gas comprises gas selected from the group consisting of argon, fluorine, nitrogen, helium, ammonia, xenon, hydrogen, and germane. ### Claim 20 (depends on 15) The method of claim 15, wherein the supplemental gas comprises gas selected from the group consisting of argon, fluorine, nitrogen, helium, ammonia, xenon, hydrogen, and germane. ### Claim 21 (depends on 12) The method of claim 12, wherein the first and second gas storage and dispensing vessels comprise at least one vessel containing a sorbent medium for adsorption storage and desorption dispensing of gas. ### Claim 22 (depends on 12) The method of claim 12, wherein the first and second gas storage and dispensing vessels comprise at least one vessel that is internally pressure-regulated. ### Claim 23 (depends on 5) The gas supply kit of claim 5, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 55% to 100%. ### Claim 24 (depends on 5) The gas supply kit of claim 5, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 60% to 100%. ### Claim 25 (depends on 5) The gas supply kit of claim 5, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 65% to 100%. ### Claim 26 (depends on 5) The gas supply kit of claim 5, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 70% to 100%. ### Claim 27 (depends on 5) The gas supply kit of claim 5, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 75% to 100%. ### Claim 28 (depends on 5) The gas supply kit of claim 5, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 80% to 100%. ### Claim 29 (depends on 5) The gas supply kit of claim 5, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 85% to 100%. ### Claim 30 (depends on 5) The gas supply kit of claim 5, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 90% to 100%. ### Claim 31 (depends on 23) The gas supply kit of claim 23, wherein the supplemental gas comprises a diluent gas selected from xenon and hydrogen. ### Claim 32 (depends on 16) The method of claim 16, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 55% to 100%. ### Claim 33 (depends on 16) The method of claim 16, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 60% to 100%. ### Claim 34 (depends on 16) The method of claim 16, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 65% to 100%. ### Claim 35 (depends on 16) The method of claim 16, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 70% to 100%. ### Claim 36 (depends on 16) The method of claim 16, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 75% to 100%. ### Claim 37 (depends on 16) The method of claim 16, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 80% to 100%. ### Claim 38 (depends on 16) The method of claim 16, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 85% to 100%. ### Claim 39 (depends on 16) The method of claim 16, wherein isotopic enrichment level of said germanium tetrafluoride is in a range of from 90% to 100%. ### Claim 40 (depends on 32) The method of claim 32, wherein the supplemental gas comprises a diluent gas selected from xenon and hydrogen. ### Claim 41 A gas supply kit for an ion implantation system, comprising (i) a first gas storage and dispensing vessel holding dopant source gas comprising germanium tetrafluoride isotopically enriched in mass 72 isotope at an enrichment in a range of from 55% to 100%, and (ii) a second gas storage and dispensing vessel holding a supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein the dopant source gas is held in the first gas storage and dispensing vessel in an adsorbed state, a free gas state, or a liquefied gas state. ### Claim 42 (depends on 41) The gas supply kit of claim 41, wherein the isotopic enrichment germanium tetrafluoride is in a range of from 55% to 85%. ### Claim 43 (depends on 41) The gas supply kit of claim 41, wherein the dopant source gas is held in the first gas storage and dispensing vessel in an adsorbed state. ### Claim 44 (depends on 41) The gas supply kit of claim 41, wherein the dopant source gas is held the first gas storage and dispensing vessel in a free gas state. ### Claim 45 (depends on 41) The gas supply kit of claim 41, wherein the dopant source gas is held in the first gas storage and dispensing vessel in a liquefied gas state. ### Claim 46 (depends on 41) The gas supply kit of claim 41, wherein the supplemental gas comprises hydrogen. ### Claim 47 (depends on 41) The gas supply kit of claim 41, wherein the supplemental gas comprises xenon. ### Claim 48 A method for enhancing operation of an ion implantation system, comprising providing for use in the ion implantation system (i) a first gas storage and dispensing vessel holding dopant source gas comprising germanium tetrafluoride isotopically enriched in mass 72 isotope at an enrichment in a range of from 55% to 100%, and (ii) a second gas storage and dispensing vessel holding a supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein the dopant source gas is held in the first gas storage and dispensing vessel in an adsorbed state, a free gas state, or a liquefied gas state. ### Claim 49 (depends on 48) The method of claim 48, wherein the isotopic enrichment germanium tetrafluoride is in a range of from 55% to 85%. ### Claim 50 (depends on 48) The method of claim 48, wherein the dopant source gas is held in the first gas storage and dispensing vessel in an adsorbed state. ### Claim 51 (depends on 48) The method of claim 48, wherein the dopant source gas is held the first gas storage and dispensing vessel in a free gas state. ### Claim 52 (depends on 48) The method of claim 48, wherein the dopant source gas is held in the first gas storage and dispensing vessel in a liquefied gas state. ### Claim 53 (depends on 48) The method of claim 48, wherein the supplemental gas comprises hydrogen. ### Claim 54 (depends on 48) The method of claim 48, wherein the supplemental gas comprises xenon.