# US 8,785,831 B2 · Image sensors and methods with high speed global shutter pixels > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,831 B2 - Document ID: US8785831B2 - Status: Granted - Kind: B2 - Application number: 13/343,662 - Filed: 2012-01-04 - Published: 2012-07-05 - Granted: 2014-07-22 - Earliest claimed: 2011-01-05 - Assignees: Luxima Technology LLC - Applicants: Alexander Krymski - Inventors: Alexander Krymski - Web page: https://patentgrep.com/patent/US8785831B2 ## CPC - H04N 25/767: Horizontal readout lines, multiplexers or registers - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H04N 25/771: comprising storage means other than floating diffusion - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/8027: {Geometry of the photosensitive area} - H10F 39/8033: {Photosensitive area} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An image sensor includes a plurality of pixels and a row driver. Each pixel includes a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node. The row driver is configured to provide signals to the first transfer gate and the second transfer gate of each pixel such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. The row driver is also configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel. ## Claims ### Claim 1 An image sensor, comprising: a pixel comprising a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node; and a row driver configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. ### Claim 2 (depends on 1) The image sensor of claim 1, wherein the row driver is configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel to the column readout line. ### Claim 3 (depends on 1) The image sensor of claim 1, wherein the row driver is configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel to a second column readout line that is separate from the column readout line. ### Claim 4 (depends on 1) The image sensor of claim 1, further comprising: a first readout circuit connected to the first storage node; and a second readout circuit connected to the second storage node. ### Claim 5 (depends on 1) The image sensor of claim 1, wherein the first transfer gate and the second transfer gate are located on a same side of the photodiode. ### Claim 6 (depends on 1) The image sensor of claim 1, wherein the photodiode has a gradient of electric field, and a negative gradient of the electric field in the photodiode is directed toward the first transfer gate and the second transfer gate. ### Claim 7 (depends on 1) The image sensor of claim 1, wherein the row driver controls the first transfer gate to be open when the second transfer gate is closed and controls the second transfer gate to be open when the first transfer gate is closed. ### Claim 8 (depends on 1) The image sensor of claim 1, wherein the photodiode has at least two areas with a difference in pinning voltage between the at least two areas of at least 250 mV. ### Claim 9 (depends on 1) The image sensor of claim 1, wherein the photodiode has a greater dose of buried n-implant in an area closer to the first transfer gate than in an area farther away from the first transfer gate. ### Claim 10 (depends on 1) The image sensor of claim 1, wherein the photodiode has triangular areas in which a potential in the triangular areas is approximately zero. ### Claim 11 (depends on 1) The image sensor of claim 1, wherein an implant of the photodiode is in the shape of rays proceeding from the first transfer gate and the second transfer gate. ### Claim 12 A method of operating an image sensor, comprising: providing signals to a first transfer gate and a second transfer gate such that charge is transferred from a photodiode to a first storage node through the first transfer gate while a signal representing charge stored at a second storage node is output to a column readout line; and providing signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output. ### Claim 13 (depends on 12) The method of claim 12, wherein the first transfer gate is controlled to be open when the second transfer gate is closed and the second transfer gate is controlled to be open when the first transfer gate is closed. ### Claim 14 (depends on 12) The method of claim 12, wherein the signal representing charge stored at the first storage node is output to the column readout line. ### Claim 15 (depends on 12) The method of claim 12, wherein the signal representing charge stored at the first storage node is output to a second column readout line that is separate from the column readout line. ### Claim 16 (depends on 1) The image sensor of claim 1, wherein the pixel is in a pixel array comprising a plurality of rows and a plurality of columns of pixels; and wherein the image sensor further comprises a plurality of column readout lines for a column of the pixel array, the plurality of column readout lines multiplexed together to have a single sensor output for the column. ### Claim 17 (depends on 16) The image sensor of claim 16, wherein the pixel array is divided in half such that pixels in a top half of the pixel array output signals to a top side of the pixel array and pixels in a bottom half of the pixel array output signals to a bottom side of the pixel array. ### Claim 18 (depends on 17) The image sensor of claim 17, wherein the plurality of column readout lines are connected to pixels in a top half of the column and another plurality of column readout lines arc connected to pixels in a bottom half of the column, ### Claim 19 (depends on 18) The image sensor of claim 18, wherein the plurality of column readout lines that are connected to the pixels in the bottom half of the column are multiplexed together to have a single sensor output.