# US 8,785,790 B2 · High strength through-substrate vias

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- Number: US 8,785,790 B2
- Document ID: US8785790B2
- Status: Granted
- Kind: B2
- Application number: 13/293,698
- Filed: 2011-11-10
- Published: 2013-05-16
- Granted: 2014-07-22
- Earliest claimed: 2011-11-10
- Assignees: Invensas Corporation
- Applicants: Cyprian Emeka Uzoh; Charles G. Woychik; Terrence Caskey; Belgacem Haba; Hiroaki Sato; Philip Damberg
- Inventors: Cyprian Emeka Uzoh; Charles G. Woychik; Terrence Caskey; Belgacem Haba; Hiroaki Sato; Philip Damberg
- Web page: https://patentgrep.com/patent/US8785790B2

## CPC

- H05K 1/115: {Via connections; Lands around holes or via connections (H05K1/112 takes precedence)}
- H05K 1/03: Use of materials for the substrate
- H05K 1/09: Use of materials for the {conductive, e.g. } metallic pattern
- H05K 3/42: Plated through-holes {or plated via connections}
- H10W 70/635: {Through-vias}
- H10W 70/66: Conductive materials thereof
- H05K 2201/0141: Liquid crystal polymer [LCP]
- H05K 2201/0175: Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
- H05K 2201/09509: Blind vias, i.e. vias having one side closed
- H05K 2201/10378: Interposers
- H05K 2203/025: Abrading, e.g. grinding or sand blasting
- H05K 2203/1105: Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
- H10W 70/69: Insulating materials thereof
- Y10T 29/49165: by forming conductive walled aperture in base
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A component includes a support structure having first and second spaced-apart and parallel surfaces and a plurality of conductive elements extending in a direction between the first and second surfaces. Each conductive element contains an alloy of a wiring metal selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth. The alloy has a composition that varies with distance in at least one direction across the conductive element. A concentration of the additive is less than or equal to 5% of the total atomic mass of the conductive element, and a resistivity of the conductive element is between 2.5 and 30 micro-ohm-centimeter.

## Claims

### Claim 1

A component, comprising:
a support structure having first and second spaced-apart and parallel surfaces and a plurality of conductive elements extending in a direction between the first and second surfaces, each conductive element containing an alloy of a wiring metal selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth, the alloy having a composition that varies with distance in at least one direction across the conductive element, the at least one direction being substantially parallel to the first and second surfaces of the support structure;
wherein a concentration of the additive is less than or equal to 5% of the total atomic mass of the conductive element, and wherein a resistivity of the conductive element is between 2.5 and 30 micro-ohm-centimeters.

### Claim 2 (depends on 1)

The component of claim 1, wherein at least some of the conductive elements are filled vias extending between the first and second surfaces and each defining a respective first end surface exposed at the first surface and a second end surface exposed at the second surface.

### Claim 3 (depends on 1)

The component of claim 1, wherein at least some of the conductive elements are distribution elements that extend in a thickness between the first and second surfaces and extend in a length in a direction along at least one of the first and second surfaces.

### Claim 4 (depends on 1)

The component of claim 1, wherein the resistivity of the conductive element is less than 10 micro-ohm-centimeters.

### Claim 5 (depends on 4)

The component of claim 4, wherein the resistivity of the conductive element is less than 5 micro-ohm-centimeters.

### Claim 6 (depends on 1)

The component of claim 1, wherein a resistivity of the alloy within the conductive elements is less than 10 micro-ohm-centimeters.

### Claim 7 (depends on 6)

The component of claim 6 wherein the resistivity of the conductive elements is between 2 and 3.5 micro-ohm-centimeters.

### Claim 8 (depends on 1)

The component of claim 1, wherein the conductive elements include a continuous layer of the additive adjacent a portion of the conductive elements including both the wiring metal and the additive.

### Claim 9 (depends on 8)

The component of claim 8, wherein the support structure includes a plurality of edge surfaces extending between the first and second surfaces and surrounding the conductive elements, and wherein the continuous additive layer is adjacent the edge surface.

### Claim 10 (depends on 9)

The component of claim 9, wherein the edge surfaces are defined by a barrier layer formed on the support structure such that the continuous layer is adjacent the barrier layer.

### Claim 11 (depends on 10)

The component of claim 10, wherein the support structure is of one of a conducting material or a semiconductor material, and wherein the barrier layer includes an insulating material.

### Claim 12 (depends on 8)

The component of claim 8, wherein the continuous layer is substantially aligned with one of the first and second surfaces.

### Claim 13 (depends on 1)

The component of claim 1, wherein the support structure includes edge surfaces extending between the first and second surfaces and at least partially surrounding the conductive elements, and wherein the alloy composition varies from a first concentration to a second, lower concentration along the direction.

### Claim 14 (depends on 1)

The component of claim 1, wherein the at least one direction along which the alloy composition varies is substantially perpendicular to the first and second surfaces of the support structure.

### Claim 15 (depends on 1)

The component of claim 1, wherein the alloy composition varies from a first concentration toward the first surface to a second, lower concentration toward the second surface.

### Claim 16 (depends on 1)

The component of claim 1, wherein the conductive elements include a continuous layer of the additive adjacent a portion of the conductive elements including both the wiring metal and the additive, and wherein the direction along which the alloy composition varies is a direction away from the continuous layer.

### Claim 17 (depends on 1)

The component of claim 1, wherein the conductive elements include portions thereof with a substantially homogeneous alloy composition.

### Claim 18 (depends on 1)

The component of claim 1, wherein the support structure consists essentially of a semiconductor material.

### Claim 19 (depends on 1)

The component of claim 1, wherein the support structure consists essentially of at least one of, glass, ceramic, liquid crystal polymer material, copper, sapphire, or aluminum.

### Claim 20 (depends on 1)

The component of claim 1, wherein the alloy has a first mechanical strength and the wiring metal has a second mechanical strength, and wherein the first mechanical strength is at least 20% greater than the second mechanical strength.

### Claim 21 (depends on 1)

The component of claim 1, wherein the alloy has a resistivity that varies with a concentration of additive therein and a mechanical strength that varies with the concentration of additive therein, and wherein the concentration of additive material in the alloy material is configured to maximize the mechanical strength while the resistivity is between 2.5 to 10 micro-ohm-centimeter.

### Claim 22 (depends on 1)

The component of claim 1, wherein the additive is a layer of additive material diffused into at least one adjacent layer of the wiring metal.

### Claim 23 (depends on 22)

The component of claim 22, wherein the additive material layer is adjacent to the edge surface of the conductive element, and wherein the layer of the wiring metal overlies the additive material layer.

### Claim 24 (depends on 22)

The component of claim 22, wherein the additive material layer overlies the layer of the wiring metal.

### Claim 25 (depends on 24)

The component of claim 24, wherein a second layer of the wiring metal further overlies the additive material layer, the additive being diffused into both the first and second layers of the wiring metal.

### Claim 26 (depends on 1)

The component of claim 1, wherein the conductive elements are filled vias, and wherein at least one of the vias includes a concave face exposed at at least one of the first and second surfaces of the support structure and defining a cavity within a portion of the via, the component further including a bonding metal mass disposed at least partially within the cavity.

### Claim 27 (depends on 26)

The component of claim 26, further including a barrier layer disposed between the concave face and the bonding metal mass.

### Claim 28 (depends on 1)

The component of claim 1, further including one or more active devices electronically interconnected with at least some of the conductive elements.

### Claim 29

A component, comprising:
a support structure having first and second spaced-apart and parallel surfaces and a plurality of metallic vias extending in a direction between the first and second surfaces, each via containing an alloy of a wiring metal selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth, at least one via including a concave end surface exposed at at least one of the first and second surfaces of the support structure and defining a cavity within the via; and
a bonding metal mass disposed at least partially within the cavity,
wherein a concentration of the additive is less than or equal to 5% of the total atomic mass of the metallic via, and wherein a resistivity of the metallic via is less than 10 micro-ohm-centimeter,
wherein the alloy has a first mechanical strength and the wiring metal has a second mechanical strength, and
wherein the first mechanical strength is at least 20% greater than the second mechanical strength.

### Claim 30 (depends on 29)

The component of claim 29, further including a barrier layer disposed between the bonding metal mass and the concave end surface of the via.

### Claim 31

A method for making a component, comprising:
depositing a layer of wiring metal within openings in a support structure, the support structure having first and second spaced-apart and parallel surfaces, and the openings extending in a direction between the first and second surfaces, the metal of the wiring metal layer being selected from the group of copper, aluminum, nickel and chromium;
depositing a layer of an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth within the openings of the support structure; and
heating at least the wiring metal and additive layers to diffuse the additive into the wiring metal to form conductive elements in the openings of the support structure, each conductive element containing an alloy of the wiring metal with the additive, the alloy having a composition that varies with distance in at least one direction across the conductive element, wherein a concentration of the additive is less than or equal to 5% of the total atomic mass of the conductive element, and wherein a resistivity of the conductive element is between 2.5 and 30 micro-ohm-centimeters.

### Claim 32 (depends on 31)

The method of claim 31, wherein the resistivity of the each conductive structure is less than 10 micro-ohm-centimeters.

### Claim 33 (depends on 31)

The method of claim 31, wherein the conductive elements are in the form of filled vias extending at least partially through the support structure, and wherein the openings in the support structure are holes having a shape corresponding to the filled vias.

### Claim 34 (depends on 31)

The method of claim 31, wherein the conductive elements are in the form of distribution elements extending in a thickness thereof between the first and second surfaces and extending in at least one lateral direction along either the first or second surfaces of the support structure, and wherein the openings in the support structure are trenches having corresponding shapes to the distribution elements.

### Claim 35 (depends on 31)

The method of claim 31, wherein after heating, portions of the conductive elements extend beyond a surface of the support structure, the method further including polishing the conductive elements to remove the portions of the conductive elements that extend beyond the surface and re-heating at least the conductive elements to form a substantially homogeneous portion of the alloy therein.

### Claim 36 (depends on 31)

The method of claim 31, wherein at least one opening has a first diameter, and wherein the additive layer is deposited at a first thickness therein, the first thickness being less than about 10% of the first diameter.

### Claim 37 (depends on 36)

The method of claim 36, wherein the first thickness is between about 0.2% and 7% of the first diameter.

### Claim 38 (depends on 31)

The method of claim 31, wherein the step of heating causes less than 10% of the additive to be incorporated into the alloy.

### Claim 39 (depends on 31)

The method of claim 31, wherein the openings define edge surfaces of the support structure therein, and wherein the additive layer is deposited adjacent the edge surfaces.

### Claim 40 (depends on 39)

The method of claim 39, wherein the support structure includes a barrier layer at least within the openings that defines the respective edge surfaces thereof.

### Claim 41 (depends on 31)

The method of claim 31, wherein the openings define edge surfaces of the support structure therein, and wherein the layer of wiring metal is deposited within the openings adjacent the edge surface and the layer of the additive is deposited over the first layer.

### Claim 42 (depends on 41)

The method of claim 41, further including depositing an additional layer of wiring metal within the openings that overlies the additive layer.

### Claim 43 (depends on 41)

The method of claim 41 wherein the layer of wiring metal is a superfill layer.

### Claim 44 (depends on 41)

The method of claim 41, wherein the layer of additive material is deposited along the edge surfaces of the openings, and wherein the layer of wiring metal is subsequently deposited over the additive material layer.

### Claim 45 (depends on 41)

The method of claim 41, wherein the wiring metal layer is a conformal metal layer.

### Claim 46 (depends on 41)

The method of claim 41, wherein the support structure includes a first surface, the openings being open to the first surface and extending partially through the support structure, and wherein the method further includes removing a portion of the support structure to expose ends of the conductive elements on the support structure opposite the first surface thereof such that the conductive elements are filled vias exposed at the first and second surfaces.