# US 8,785,329 B2 · Method for forming pattern and method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,329 B2 - Document ID: US8785329B2 - Status: Granted - Kind: B2 - Application number: 13/728,495 - Filed: 2012-12-27 - Published: 2014-03-13 - Granted: 2014-07-22 - Earliest claimed: 2012-09-07 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Shimon Maeda; Kenji Konomi - Inventors: Shimon Maeda; Kenji Konomi - Web page: https://patentgrep.com/patent/US8785329B2 ## CPC - H10P 14/6516: {of treatments performed after formation of the materials} - B81C 1/00031: {Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002)} - H10P 50/71: {using masks for conductive or resistive materials} - H10P 76/20: of masks comprising organic materials - B81C 2201/0149: Forming nanoscale microstructures using auto-arranging or self-assembling material - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) ## Abstract In a method for forming a pattern according to an embodiment, a first guide pattern and a second guide pattern for induced self organization of a DSA material are formed on substrate. On a first DSA condition, a first phase-separated pattern having regularity with respect to the first guide pattern is formed, and a first pattern is formed by processing the lower layer side. Subsequently, on a second DSA condition, a second phase-separated pattern having regularity with respect to the second guide pattern is formed, and a second pattern is formed by processing the lower layer side. ## Claims ### Claim 1 A method for forming a pattern, comprising: forming a first guide pattern and a second guide pattern for induced self organization of a DSA material on a processing target film above a substrate; forming a first phase-separated pattern at a position corresponding to the first guide pattern on a first DSA condition that is capable of forming the first phase-separated pattern having regularity with respect to the first guide pattern and is incapable of forming a second phase-separated pattern having regularity with respect to the second guide pattern; forming a first on-substrate pattern by processing the processing target film, which is disposed in a lower layer side of the first phase-separated pattern, by using the first phase-separated pattern; forming the second phase-separated pattern at a position corresponding to the second guide pattern on a second DSA condition that is capable of forming the second phase-separated pattern having regularity with respect to the second guide pattern and is incapable of forming the first phase-separated pattern having regularity with respect to the first guide pattern; and forming a second on-substrate pattern by processing the processing target film, which is disposed in a lower layer side of the second phase-separated pattern, by using the second phase-separated pattern. ### Claim 2 (depends on 1) The method according to claim 1, wherein the first phase-separated pattern and the second phase-separated pattern are different in at least one of size, shape, and pitch of the patterns. ### Claim 3 (depends on 1) The method according to claim 1, wherein the first DSA condition and the second DSA condition are different in at least one of a type of the DSA material, a molecular weight of the DSA material, a composition ratio of the DSA material, a type of a lipophilic portion, a type of a hydrophilic portion, χ parameter of the DSA material, a coating condition of the DSA material, a type of a solvent used when coating the DSA material, a guide condition, an annealing condition of the DSA material, a type of homopolymer to be added to the DSA material, a molecular weight of the homopolymer to be added to the DSA material, and a ratio of segment lengths between the lipophilic portion and the hydrophilic portion. ### Claim 4 (depends on 3) The method according to claim 3, wherein the guide condition comprises at least one of sizes, heights, and taper angles of the first guide pattern and the second guide pattern. ### Claim 5 (depends on 3) The method according to claim 3, wherein the annealing condition of the DSA material comprises at least one of annealing time, annealing temperature and atmosphere until the DSA material is phase-separated. ### Claim 6 (depends on 1) The method according to claim 1, wherein when forming the first phase-separated pattern, a solution containing the DSA material is coated from above the first and second guide patterns, the solution is buried in a region where the first phase-separated pattern is to be formed, a phase separation of the DSA material is performed, and the first phase-separation pattern is formed by leaving a first phase-separated phase and removing a second phase-separated phase. ### Claim 7 (depends on 1) The method according to claim 1, wherein when forming the second phase-separated pattern, a solution containing the DSA material is coated from above the first and second guide patterns, the solution is buried in a region where the second phase-separated pattern is to be formed, a phase separation of the DSA material is performed, and the second phase-separation pattern is formed by leaving a second phase-separated phase and removing a first phase-separated phase. ### Claim 8 A method for forming a pattern, comprising: forming a first guide pattern and a second guide pattern for induced self organization of a DSA material on a processing target film above a substrate; forming first phase-separated patterns at positions corresponding to the first and second guide patterns on a first DSA condition that is capable of forming the first phase-separated patterns having regularity with respect to the first and second guide patterns; forming a first isolated hole pattern by processing the processing target film, which is disposed in a lower layer side of the first phase-separated patterns, by using the first phase-separated patterns; forming a second phase-separated pattern at a position corresponding to the second guide pattern on a second DSA condition that is capable of forming the second phase-separated pattern having regularity with respect to the second guide pattern and having a size larger than the first phase-separated pattern and is incapable of forming a phase-separated pattern having regularity with respect to the first guide pattern; and forming a second isolated hole pattern having a size larger than the first isolated hole pattern by processing the processing target film, which is disposed in a lower layer side of the second phase-separated pattern, by using the second phase-separated pattern. ### Claim 9 (depends on 8) The method according to claim 8, wherein the first phase-separated pattern and the second phase-separated pattern have different pattern sizes. ### Claim 10 (depends on 8) The method according to claim 8, wherein the first DSA condition and the second DSA condition are different in at least one of a type of the DSA material, a molecular weight of the DSA material, a composition ratio of the DSA material, a type of a lipophilic portion, a type of a hydrophilic portion, χ parameter of the DSA material, a coating condition of the DSA material, a type of a solvent used when coating the DSA material, a guide condition, an annealing condition of the DSA material, a type of homopolymer added to the DSA material, a molecular weight of the homopolymer added to the DSA material, and a ratio of segment lengths between the lipophilic portion and the hydrophilic portion. ### Claim 11 (depends on 10) The method according to claim 10, wherein the guide condition comprises at least one of size and film thickness of the first guide pattern and the second guide pattern. ### Claim 12 (depends on 10) The method according to claim 10, wherein the annealing condition of the DSA material comprises at least one of annealing time and annealing temperature until the DSA material is phase-separated. ### Claim 13 (depends on 8) The method according to claim 8, wherein when forming the first phase-separated pattern, a solution containing the DSA material is coated from above the first and second guide patterns, the solution is buried in a region where the first phase-separated pattern is to be formed, a phase separation of the DSA material is performed, and the first phase-separation pattern is formed by leaving a first phase-separated phase and removing a second phase-separated phase. ### Claim 14 A method for manufacturing a semiconductor device, comprising: forming a first guide pattern and a second guide pattern for induced self organization of a DSA material on a processing target film above a substrate; forming a first phase-separated pattern at a position corresponding to the first guide pattern on a first DSA condition that is capable of forming the first phase-separated pattern having regularity with respect to the first guide pattern and is incapable of forming a second phase-separated pattern having regularity with respect to the second guide pattern; forming a first on-substrate pattern by processing the processing target film, which is disposed in a lower layer side of the first phase-separated pattern, by using the first phase-separated pattern; forming a second phase-separated pattern at a position corresponding to the second guide pattern on a second DSA condition that is capable of forming the second phase-separated pattern having regularity with respect to the second guide pattern and is incapable of forming the first phase-separated pattern having regularity with respect to the first guide pattern; and forming a second on-substrate pattern by processing the processing target film, which is disposed in a lower layer side of the second phase-separated pattern, by using the second phase-separated pattern. ### Claim 15 (depends on 14) The method according to claim 14, wherein the first phase-separated pattern and the second phase-separated pattern are different in at least one of size, shape, and pitch of the patterns. ### Claim 16 (depends on 14) The method according to claim 14, wherein the first DSA condition and the second DSA condition are different in at least one of a type of the DSA material, a molecular weight of the DSA material, a composition ratio of the DSA material, a type of a lipophilic portion, a type of a hydrophilic portion, χ parameter of the DSA material, a coating condition of the DSA material, a type of a solvent used when coating the DSA material, a guide condition, an annealing condition of the DSA material, a type of homopolymer added to the DSA material, a molecular weight of the homopolymer added to the DSA material, and a ratio of segment lengths between the lipophilic portion and the hydrophilic portion. ### Claim 17 (depends on 16) The method according to claim 16, wherein the first phase-separated pattern and the second phase-separated pattern are different in at least one of size and film thickness of the first guide pattern and the second guide pattern. ### Claim 18 (depends on 16) The method according to claim 16, wherein the annealing condition of the DSA material comprises at least one of annealing time and annealing temperature until the DSA material is phase-separated. ### Claim 19 (depends on 14) The method according to claim 14, wherein when forming the first phase-separated pattern, a solution containing the DSA material is coated from above the first and second guide patterns, the solution is buried in a region where the first phase-separated pattern is to be formed, a phase separation of the DSA material is performed, and the first phase-separation pattern is formed by leaving a first phase-separated phase and removing a second phase-separated phase. ### Claim 20 (depends on 14) The method according to claim 14, wherein when forming the second phase-separated pattern, a solution containing the DSA material is coated from above the first and second guide patterns, the solution is buried in a region where the second phase-separated pattern is to be formed, a phase separation of the DSA material is performed, and the second phase-separation pattern is formed by leaving a second phase-separated phase and removing a first phase-separated phase.