# US 8,785,327 B2 · Method of manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,327 B2 - Document ID: US8785327B2 - Status: Granted - Kind: B2 - Application number: 13/603,887 - Filed: 2012-09-05 - Published: 2013-09-12 - Granted: 2014-07-22 - Earliest claimed: 2012-01-06 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Keisuke Kikutani - Inventors: Keisuke Kikutani - Web page: https://patentgrep.com/patent/US8785327B2 ## CPC - H10P 50/691: {for Group IV materials or Group III-V materials} - H10B 41/10: characterised by the top-view layout - H10B 41/41: of a memory region comprising a cell select transistor, e.g. NAND - H10B 41/50: characterised by the boundary region between the core region and the peripheral circuit region - H10B 43/10: characterised by the top-view layout - H10B 43/35: with cell select transistors, e.g. NAND - H10B 43/40: characterised by the peripheral circuit region - H10B 43/50: characterised by the boundary region between the core and peripheral circuit regions - H10D 89/10: Integrated device layouts - H10P 50/71: {using masks for conductive or resistive materials} - H10P 76/4085: {characterised by the processes involved to create the masks} - H10P 76/4088: {Processes for improving the resolution of the masks} - H10W 20/01: {Manufacture or treatment} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract According to one embodiment, a method of manufacturing a semiconductor device, includes forming first layer on first and second regions in substrate, first layer having first width in first region and having larger dimension than first width in second region, forming first sidewall on first layer, forming second layer covering first sidewall in the second region and forming third layer having second width smaller than first width on the side face of first sidewall having second width after removing first layer, forming second and third sidewalls having second width so that second and third sidewalls is adjacent to first sidewall across third layer by second width in first region and across second and third layers by second interval larger than second width in the second region. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: forming a first sacrificial layer above a processed layer in first and second regions adjacent to each other in a first direction of a semiconductor substrate, the first sacrificial layer including a linear portion extending in the first direction and having a first width and a fringe portion of a flag shape provided in the second region and having a first dimension in a second direction crossing the first direction larger than the first width; forming a first sidewall film on a side face of the first sacrificial layer; forming at least a second sacrificial layer covering at least a portion of the first sidewall film in the second region so as to project to both sides in a direction parallel to a width direction of the portion of the first sidewall film from a side face of the portion and forming a third sacrificial layer having substantially a second width smaller than the first width on side faces of the first sidewall film having the second width and the second sacrificial layer, after the first sacrificial layer is removed; and forming second and third sidewall films having substantially the second width in such a way that each of the second and third sidewall films is adjacent to the first sidewall film across the third sacrificial layer by having a first interval corresponding to the second width in the first region and is adjacent to the first sidewall film across the second and third sacrificial layers by having a second interval larger than the first interval in the second region, wherein the first sacrificial layer is formed in such a way that a plurality of patterns are arranged along the second direction in the first region, the first sidewall film is formed on the side face of the first sacrificial layer with the second width, the second and third sidewall films are formed in such a way that each of the second and third sidewall films are adjacent to the first sidewall film across the third sacrificial layer in the first region, the first to third sidewall films as a whole have substantially ⅙ pitch in the second direction of the plurality of patterns of the first sacrificial layer in the first region. ### Claim 2 (depends on 1) The method according to claim 1, further comprising: after the second and third sacrificial layers are removed, forming a first mask pattern having a second dimension larger than the second width in a direction parallel to a width direction of the first to third sidewall films in a position in the second region overlapping with portions of the first to third sidewall films adjacent to each other with the second interval for each of the first to third sidewall films; and forming a plurality of interconnects adjacent to each other with the first interval in the first region and with the second interval in the second region and having substantially the second width and a plurality of contact portions connected to the interconnects respectively and having substantially the second dimension by processing the processed layer so that the first to third sidewall films and the first mask pattern are transferred. ### Claim 3 (depends on 2) The method according to claim 2, wherein when the first mask pattern is formed in the position in the second region, upper ends of the first to third sidewall films exposed first in the first region are selectively etched so that the positions of the upper ends of the first to third sidewall films are aligned. ### Claim 4 (depends on 3) The method according to claim 3, wherein a stacked mask including a first mask layer covering the first to third sidewall films and a second mask layer on the first mask layer is formed above the processed layer, a first resist mask corresponding to the first mask pattern is formed above the stacked mask by lithography, and the stacked mask is processed based on the first resist mask to form the first mask pattern. ### Claim 5 (depends on 4) The method according to claim 4, wherein when the stacked mask is processed, the upper end of the first sidewall film among the first to third sidewall films is exposed from an upper surface of the first mask layer prior to the upper ends of the second and third sidewall films and the upper ends of the second and third sidewall films are covered with the first mask layer. ### Claim 6 (depends on 2) The method according to claim 2, wherein a second mask pattern corresponding to a transistor gate pattern and having a third width larger than the second width is formed in the first region simultaneously with formation of the first mask pattern and the processed layer is processed so that the first to third sidewall films and the first and second mask patterns are transferred. ### Claim 7 (depends on 2) The method according to claim 2, wherein the second and third sacrificial layers are removed substantially simultaneously under a same condition. ### Claim 8 (depends on 7) The method according to claim 7, wherein the second and third sacrificial layers include a same element as a mainly containing element. ### Claim 9 (depends on 2) The method according to claim 2, wherein the portion of first sidewall film is formed so as to extend in the first direction along a shape of the fringe portion. ### Claim 10 (depends on 2) The method according to claim 2, wherein among the plurality of contact portions, a half of the contact portions are formed in the second region so as to be arranged in the first direction and a remaining half of the contact portions are formed in the second region so as to be arranged in the second direction and to be opposed to the half of the contact portions in the first direction. ### Claim 11 (depends on 2) The method according to claim 2, wherein said at least a portion of first sidewall film includes two portions, the two portions are formed so as to extend in the second direction along a shape of the fringe and to be opposed to each other in the first direction. ### Claim 12 (depends on 11) The method according to claim 11, wherein the plurality of contact portions are formed in the second region so as to be arranged along the first direction. ### Claim 13 (depends on 1) The method according to claim 1, wherein the first sidewall film is formed on the side face of the first sacrificial layer so as to have the second width. ### Claim 14 (depends on 1) The method according to claim 1, wherein after the first sacrificial layer is removed, a width of the first sidewall film is set to the second width. ### Claim 15 (depends on 1) The method according to claim 1, wherein the second sacrificial layer is formed to cover the portion of the first sacrificial layer in the second region before the first sacrificial layer is removed, when the first sacrificial layer is removed, the portion of the first sacrificial layer covered by the second sacrificial layer in the second region remains in the second sacrificial layer, and the first sacrificial layer covered with the second sacrificial layer appears at one side face of the second sacrificial layer in the width direction, and the second sacrificial layer appears at the other side face of the second sacrificial layer in the width direction. ### Claim 16 (depends on 1) The method according to claim 1, wherein after the first sacrificial layer is removed, the second sacrificial layer is formed to cover the portion of first sidewall film, after the second sacrificial layer is formed, the third sacrificial layer is formed on the side face of the second sacrificial layer. ### Claim 17 (depends on 1) The method according to claim 1, wherein after the third sacrificial layer is formed on the side face of the first sidewall film, the second sacrificial layer is formed so as to cover the portion of first sidewall film and the third sacrificial layer. ### Claim 18 (depends on 1) The method according to claim 1, wherein the second width and the first interval are set to less than a limit dimension of a resolution of photolithography and the second interval is set to the limit dimension of the resolution of photolithography or more. ### Claim 19 (depends on 1) The method according to claim 1, wherein the plurality of patterns of the first sacrificial layer are formed so as to be adjacent to each other with a third interval in the second direction, the first width is set to a size of five times the second width and the third interval is set to the size of seven times the second width.