# US 8,785,319 B2 · Methods for forming fine patterns of a semiconductor device

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- Number: US 8,785,319 B2
- Document ID: US8785319B2
- Status: Granted
- Kind: B2
- Application number: 13/799,125
- Filed: 2013-03-13
- Published: 2013-10-03
- Granted: 2014-07-22
- Earliest claimed: 2012-03-28
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Joon-Soo Park; Kukhan Yoon; Joon Kim; Cheolhong Kim; Seokwoo Nam
- Web page: https://patentgrep.com/patent/US8785319B2

## CPC

- H10P 50/693: {characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane}
- H10B 12/318: {the storage electrode having multiple segments}
- H10B 12/488: {Word lines}
- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 63/10: Phase change RAM [PCRAM, PRAM] devices
- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/716: {having vertical extensions}
- H10P 50/73: {using masks for insulating materials}
- H10P 76/403: {for lift-off processes}
- H10P 76/4085: {characterised by the processes involved to create the masks}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Methods of forming fine patterns are provided. The methods may include forming first hard mask patterns extending in a first direction on a lower layer, forming second hard mask patterns filling gap regions between the first hard mask patterns, forming first mask patterns extending in a second direction perpendicular to the first direction on the first and second hard mask patterns, etching the first hard mask patterns using the first mask patterns as etch masks to form first openings, forming second mask patterns filling the first openings and extending in the second direction, and etching the second hard mask patterns using the second mask patterns as etch masks to form second openings spaced apart from the first openings in a diagonal direction with respect to the first direction.

## Claims

### Claim 1

A method of forming fine patterns, comprising:
forming first hard mask patterns extending in a first direction on a lower layer;
forming second hard mask patterns filling gap regions between the first hard mask patterns;
forming first mask patterns extending in a second direction perpendicular to the first direction on the first hard mask patterns and the second hard mask patterns;
etching the first hard mask patterns using the first mask patterns as etch masks to form first openings;
forming second mask patterns filling the first openings and extending in the second direction; and
etching the second hard mask patterns using the second mask patterns as etch masks to form second openings spaced apart from the first openings in a diagonal direction with respect to the first direction.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
transferring the first and second openings to the lower layer to form holes arranged in zigzag form in the lower layer.

### Claim 3 (depends on 2)

The method of claim 2, further comprising:
filling each of the holes in the lower layer with a filling material; and
removing the lower layer to form fine patterns arranged in zigzag form.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first hard mask patterns are repeatedly arranged with a first pitch.

### Claim 5 (depends on 4)

The method of claim 4, wherein the first pitch is about two times greater than a width of the first hard mask pattern.

### Claim 6 (depends on 5)

The method of claim 5, wherein the first mask patterns are repeatedly arranged with a second pitch that is two or more times greater than the first pitch.

### Claim 7 (depends on 6)

The method of claim 6, wherein a width of the first mask pattern is greater than the width of the first hard mask pattern.

### Claim 8 (depends on 6)

The method of claim 6, wherein the second mask patterns are repeatedly arranged with a third pitch substantially equal to the second pitch.

### Claim 9 (depends on 1)

The method of claim 1, wherein
the first and second hard mask patterns have an etch selectivity with respect to the lower layer; and
the first hard mask patterns are formed of a material different from that of the second hard mask patterns.

### Claim 10 (depends on 1)

The method of claim 1, wherein the first and second hard mask patterns may include at least one of poly-silicon, SiON, Si3N4, SiCN, and SiC.

### Claim 11 (depends on 1)

The method of claim 1, wherein each of the first and second mask patterns includes an organic pattern including carbon.

### Claim 12 (depends on 1)

The method of claim 1, wherein the lower layer is formed of one of a semiconductor material, a conductive material, an insulating material, and any combination thereof.

### Claim 13

A method of forming fine patterns, comprising:
forming first hard mask patterns extending in a first direction on a lower layer;
forming second hard mask patterns filling gap regions between the first hard mask patterns;
forming first openings in each of the first hard mask patterns, a space between the first openings arranged in the first direction greater than a space between the first openings arranged in a second direction perpendicular to the first direction;
forming second openings in each of the second hard mask patterns, the second openings spaced apart from the first openings in a diagonal direction with respect to the first direction; and
transferring the first and second openings to the lower layer to form holes arranged in zigzag form.

### Claim 14 (depends on 13)

The method of claim 13, wherein the forming first openings comprises:
forming first mask patterns extending in the second direction on the first and second hard mask patterns; and
etching the first hard mask patterns using the first mask patterns and the second hard mask patterns as etch masks.

### Claim 15 (depends on 14)

The method of claim 14, wherein the forming second openings comprises:
removing the first mask patterns after forming the first openings;
forming second mask patterns that fill the first openings and extend in the second direction; and
etching the second hard mask patterns using the second mask patterns and the first hard mask patterns as etch masks.

### Claim 16

A method of forming fine patterns, comprising:
forming first mask patterns, extending in a first direction, on first hard mask patterns and second hard mask patterns, the first hard mask patterns on a lower layer extending in a second direction perpendicular to the first direction, the second hard mask patterns filling gap regions between the first hard mask patterns;
etching the first hard mask patterns using the first mask patterns as etch masks to form first openings;
forming second mask patterns filling the first openings and extending in the first direction; and
etching the second hard mask patterns using the second mask patterns as etch masks to form second openings spaced apart from the first openings in a diagonal direction with respect to the second direction.

### Claim 17 (depends on 16)

The method of claim 16, further comprising:
transferring the first and second openings to the lower layer to form holes arranged in zigzag form in the lower layer.

### Claim 18 (depends on 17)

The method of claim 17, further comprising:
filling each of the holes in the lower layer with a filling material; and
removing the lower layer to form fine patterns arranged in zigzag form.

### Claim 19 (depends on 16)

The method of claim 16, wherein the first hard mask patterns are repeatedly arranged with a first pitch.

### Claim 20 (depends on 19)

The method of claim 19, wherein the first pitch is about two times greater than a width of the first hard mask pattern.