# US 8,785,301 B2 · Method of cleaning silicon carbide semiconductor

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- Number: US 8,785,301 B2
- Document ID: US8785301B2
- Status: Granted
- Kind: B2
- Application number: 13/390,869
- Filed: 2011-02-25
- Published: 2012-06-14
- Granted: 2014-07-22
- Earliest claimed: 2010-06-16
- Assignees: Sumitomo Electric Industries, Ltd.
- Applicants: Keiji Wada; Takeyoshi Masuda; Tomihito Miyazaki; Toru Hiyoshi; Satomi Itoh; Hiromu Shiomi
- Inventors: Keiji Wada; Takeyoshi Masuda; Tomihito Miyazaki; Toru Hiyoshi; Satomi Itoh; Hiromu Shiomi
- Web page: https://patentgrep.com/patent/US8785301B2

## CPC

- H10P 70/15: {by wet cleaning only (H10P70/52 takes precedence)}
- H10D 30/0291: {of vertical DMOS [VDMOS] FETs}
- H10P 70/20: {Cleaning during device manufacture}
- H10P 72/0414: {using mainly spraying means, e.g. nozzles}
- H10D 12/031: {of IGBTs}
- H10D 30/66: Vertical DMOS [VDMOS] FETs
- H10D 62/8325: {Silicon carbide}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.

## Claims

### Claim 1

A method of cleaning a silicon carbide semiconductor, comprising the steps of:
forming an oxide film at a surface of a silicon carbide semiconductor, said oxide film being a silicon oxide film, and
removing said oxide film,
at said forming step, said oxide film being formed using ozone water having a concentration greater than or equal to 30 ppm.

### Claim 2 (depends on 1)

The method of cleaning a silicon carbide semiconductor according to claim 1, wherein said forming step includes the step of heating at least one of said surface of said silicon carbide semiconductor and said ozone water.

### Claim 3 (depends on 2)

The method of cleaning a silicon carbide semiconductor according to claim 2, wherein said heating step includes the step of heating said ozone water greater than or equal to 25° C. and less than or equal to 90° C.

### Claim 4 (depends on 2)

The method of cleaning a silicon carbide semiconductor according to claim 2, wherein said heating step includes the step of heating said surface of said silicon carbide semiconductor greater than or equal to 25° C. and less than or equal to 90° C.

### Claim 5 (depends on 1)

The method of cleaning a silicon carbide semiconductor according to claim 1, wherein, at said removing step, said oxide film is removed using hydrogen fluoride.

### Claim 6 (depends on 1)

The method of cleaning a silicon carbide semiconductor according to claim 1, wherein said forming step and said removing step are carried out simultaneously.

### Claim 7 (depends on 1)

The method of cleaning a silicon carbide semiconductor according to claim 1, wherein said forming step includes the step of mixing carbon dioxide gas into said ozone water.