# US 8,785,294 B2 · Silicon carbide lamina

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- Number: US 8,785,294 B2
- Document ID: US8785294B2
- Status: Granted
- Kind: B2
- Application number: 13/558,843
- Filed: 2012-07-26
- Published: 2014-01-30
- Granted: 2014-07-22
- Earliest claimed: 2012-07-26
- Assignees: GTAT Corporation
- Applicants: Venkatesan Murali; Steve Babayan; Christopher J. Petti
- Inventors: Venkatesan Murali; Steve Babayan; Christopher J. Petti
- Web page: https://patentgrep.com/patent/US8785294B2

## CPC

- H10H 20/018: {Bonding of wafers}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of fabricating an electronic device includes providing a silicon carbide or diamond-like carbon donor body and implanting ions into a first surface of the donor body to define a cleave plane. After implanting, an epitaxial layer is formed on the first surface, and a temporary carrier is coupled to the epitaxial layer. A lamina is cleaved from the donor body at the cleave plane, and the temporary carrier is removed from the lamina. In some embodiments a light emitting diode or a high electron mobility transistor is fabricated from the lamina and epitaxial layer.

## Claims

### Claim 1

A method of fabricating an electronic device, the method comprising the steps of:
providing a donor body having a first surface, wherein the donor body comprises silicon carbide or diamond-like carbon;
implanting ions into the first surface of the donor body to define a cleave plane;
after the step of implanting, forming an epitaxial layer on the first surface of the donor body using heteroepitaxy;
coupling a temporary carrier to the epitaxial layer on the first surface of the donor body;
cleaving a lamina from the donor body at the cleave plane, wherein the cleave plane forms a back surface of the lamina, wherein the first surface of the donor body is a front surface of the lamina, and wherein the lamina has a cleaved thickness from the front surface to the back surface; and
removing the temporary carrier from the lamina.

### Claim 2 (depends on 1)

The method of claim 1 wherein the temporary carrier is coupled to the epitaxial layer using a vacuum force.

### Claim 3 (depends on 1)

The method of claim 1 wherein the temporary carrier is coupled to the epitaxial layer using an electrostatic force.

### Claim 4 (depends on 1)

The method of claim 1 wherein the temporary carrier is coupled to the epitaxial layer using an adhesive.

### Claim 5 (depends on 1)

The method of claim 1 further comprising one or more intervening layers between the temporary carrier and the epitaxial layer.

### Claim 6 (depends on 5)

The method of claim 5 wherein the intervening layers comprise at least one of the group consisting of metal electrodes, transparent conductors and reflecting layers.

### Claim 7 (depends on 1)

The method of claim 1 wherein the epitaxial layer comprises at least one material chosen from the group consisting of GaN, doped SiC, GaAs, InGaAs, AlGaAs, InGaAlAs, InP, GaP, InGaN, InSb, ZnSe, ZnS, AlN and AlGaN.

### Claim 8 (depends on 1)

The method of claim 1 wherein the step of cleaving occurs after the step of forming an epitaxial layer.

### Claim 9 (depends on 1)

The method of claim 1 wherein the step of cleaving occurs at an exfoliation temperature, wherein the step of forming occurs at an epitaxial temperature, and wherein the exfoliation temperature is greater than the epitaxial temperature.

### Claim 10 (depends on 9)

The method of claim 9 wherein the exfoliation temperature is at least 900 degrees Celsius.

### Claim 11 (depends on 9)

The method of claim 9 wherein the epitaxial temperature is less than 900 degrees Celsius.

### Claim 12 (depends on 1)

The method of claim 1 wherein the thickness of the lamina is between 3-20 microns.

### Claim 13 (depends on 1)

The method of claim 1 further comprising the step of fabricating a light emitting diode with the lamina and epitaxial layer.

### Claim 14 (depends on 13)

The method of claim 13 wherein the thickness of the lamina remains substantially the same between the steps of cleaving the lamina and fabricating the light emitting diode.

### Claim 15 (depends on 14)

The method of claim 14 wherein the thickness of the lamina remains within 20% deviation of its cleaved thickness.

### Claim 16 (depends on 1)

The method of claim 1 further comprising the step of fabricating a high electron mobility transistor with the lamina and epitaxial layer.

### Claim 17 (depends on 16)

The method of claim 16 wherein the thickness of the lamina remains substantially the same between the steps of cleaving the lamina and fabricating the high electron mobility transistor.

### Claim 18 (depends on 17)

The method of claim 17 wherein the thickness of the lamina remains within 20% deviation of its cleaved thickness.